Performance Of Organic Thin-film Transistors Research Articles

Organic thin film transistors in wearable electronics: prospects in sensor technology and healthcare

This paper critically examines Organic Thin Film Transistors (OTFTs), emphasizing their crucial role in enhancing wearable electronics. Through an in-depth exploration of OTFT fundamental principles and unique characteristics, the paper highlights their advantages, such as unparalleled mechanical flexibility and low-temperature processing capabilities, over traditional semiconductor technologies. It delves into OTFT applications in wearable sensor technologies and healthcare monitoring, illustrating the significant benefits of OTFT integration, including superior energy efficiency and augmented user comfort. Addressing the primary challenges of power consumption, environmental stability, and manufacturing scalability, the study proposes innovative solutions to improve these areas. Central to the research objectives is the enhancement of OTFT performance through strategic material selection, fabrication techniques, and integration approaches to ensure device durability and functionality. The paper concludes with a comprehensive analysis of recent advancements and future directions, underscoring the transformative potential of OTFTs in wearable electronics. This research finds that through interdisciplinary collaboration and innovative engineering, it is possible to mitigate the current limitations of OTFTs, paving the way for their widespread adoption in advanced wearable and healthcare technologies.

High-throughput characterization is key to report reliable organic thin-film transistor performance

High-throughput characterization is key to report reliable organic thin-film transistor performance

Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

Organic thin-film transistors (OTFTs) have attracted great attention for their inherent advantages and promising applications in emerging fields. Simultaneously realizing low-voltage operation and high-mobility in one OTFT is one of prerequisites for the commercialization, which is a huge challenge so far. An important route to address this challenge is to develop an ideal gate dielectric with a high capacitance and a low interfacial trap density at the dielectric/channel. In this Letter, we demonstrate the low-voltage operating high-mobility OTFTs by elaborately designing and processing a multi-layered gate dielectric. The gate dielectric consists of a high permittivity polymer film, a polymer buffing layer with a high surface energy, and an ultrathin long-chain alkane buffer layer. The effects of both the structures and the processes of gate dielectrics on the performances of OTFTs are investigated in detail. In addition, the relevant physical mechanisms are discussed. Finally, the optimal OTFTs exhibit high mobilities with the average and maximum values up to 5.62 and 6.74 cm2/V s, respectively, at low operating voltages below −5 V. Our findings reveal that designing and processing a reasonable multi-layered gate dielectric is a promising strategy to achieve both high-mobility and low-voltage operation in OTFTs, thereby fostering their development.

Effect of source and drain electrode positions on the performance of bottom gate organic thin film transistor

In recent years several novel technologies have emerged on commercial level. Organic electronics is one such technology that has created new avenues for the development of flexible, robust, and cost-effective electronic devices. Transistor developed using organic materials are called organic thin film transistors (OTFT). Transistor is elementary component of any electronic device, any variation in the size or performance of the transistors reflects directly on the overall performance of the electronic devices. Bottom gate bottom contact (BGBC) OTFT is commonly employed single gate organic transistor owing to its simple architecture and easy fabrications. Since in organic semiconductor material carrier mobility of charges is lower, hence its overall performance declines. As a result, its application in electronic circuits becomes limited. Therefore, to enhance the performance of BGBC OTFT and facilitate the optimal charge mobilisation inside organic semiconductor layer i.e., OSC, improvement in the architecture of BGBC is deemed necessary. In this research article the performance of BGBC OTFT is analysed for different positions of electrodes viz. source and drain embedded inside the OSC layer. The study signifies the effect of electrode positions on performance optimization of BGBC OTFT without changing the materials, dimensions, or the operating voltage regime. It has been found that for 30 nm thick OSC layer, the electrodes should ideally be placed between 5 nm to 10 nm above the junction of OSC and dielectric layer inside OSC layer for optimal results.

Effect of temperature modulation on the performance of top contact bottom gate organic thin film transistor

This research article investigates the influence of temperature variations on the performance parameters of Top Contact Bottom Gate (TCBG) Organic Thin Film Transistors (OTFTs). Employing the Arrhenius equation and Schottky emission model, the study explores temperature-dependent charge carrier mobility and injection mechanisms. Analyzing a wide range of parameters, the research unveils a complex interplay between temperature and OTFT behavior. The linear and saturation mobilities exhibit a decline due to enhanced carrier-phonon interactions and lattice vibrations. Transconductance and ION/IOFF ratio display a concomitant decrease at higher temperatures, indicative of the heightened susceptibility of OTFT performance to temperature fluctuations. The depreciation in subthreshold slope and threshold voltage with rising temperatures underscores the influence of temperature on trap states. The research emphasizes the importance of considering temperature’s impact during OTFT design for diverse applications, enhancing the reliability and functionality of organic electronic devices.

Confronting positions: para- vs. meta-functionalization in triindole for p-type air-stable OTFTs

The 5,10,15-trihexyl-10,15-dihydro-5H-diindolo[3,2-a:3′,2′-c]carbazole core, namely triindole, is well-known for its prominent hole-transporting properties and air stability. The functionalization of this core is also rather versatile, which allows the modulation of its properties by anchoring targeted scaffolds to different positions, e.g. 3,8,13 (para with respect to the nitrogens), 2,7,12 (analogously meta) or the nitrogen heteroatoms. Therefore, triindole excels as a pivotal semiconductor to be exploited in long-lasting organic thin-film transistors (OTFTs). This report aims to shed light on the effect of functionalizing whether para or meta positions with sulfurated moieties, in the pursuit of an enhanced performance in OTFTs. Remarkably, meta-substituted derivatives outshone their para- counterparts in terms of thermal, optical, intermolecular arrangement and semiconductor properties, claiming mobility values up to 2 × 10−3 cm2 V−1 s−1 and a shelf lifetime beyond the analyzed period of 5 months. Analysis of the thin films by grazing incidence X-ray diffraction (GIRXD) and atomic force microscopy (AFM) revealed that the meta-substitution also induces a higher degree of order and better morphology, further corroborating the potential of this structural approach.

A study of bottom-contact organic thin-film transistors based on source/drain tunneling structure

During recent years, OLED display has become one of the important products for consuming electronics and industrial domains. For AMOLED display, thin film transistor (TFT) is necessary for driving OLED devices. As the polysilicon and amorphous silicon TFTs have become mainstreams, organic thin film transistors (OTFTs) have also been proposed and shown their advantages in low-temperature process compatible with flexible substrates. However, OTFTs applicable to drive OLED generally adopt bottom-contact configuration. The performance of bottom-contact OTFTs are often inferior relative to top-contact OTFTs, due primarily to the high contact resistance of bottom-contact OTFTs. To overcome this disadvantage, the source/drain tunneling structure is proposed in this article. This tunneling structure can not only decorate the electrode/organic semiconductor interface to obtain a good metal-semiconductor contact, but also can form a MOS configuration at source/drain contact, so as to increase the carrier concentration at the contact to further reduce contact resistance. In this paper, a typical P-type high-mobility small molecule material of Pentacene is employed as the active layer of the OTFT, while CuO film, Polystyrene (PS) film is separately selected as the tunneling layer at source/drain contact. The diverse parameters, especially field effect mobility, were analyzed by analyzing electrical characteristics of the top-contact and bottom-contact OTFTs. In addition, the contact resistances were confirmed by line transfer method. The bottom-contact OTFTs incorporating tunneling layer own a maximum hole mobility of 0.143cm2/V·s.This suggested that the source/drain tunneling structure can indeed improve the electrical characteristics of bottom-contact OTFT, and further improvement is necessitated to achieve the high performance comparable to top-contact device.

The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin-Film Transistors (OTFTs).

The interface between dielectric and organic semiconductor is critically important in determining organic thin-film transistor (OTFT) performance. Surface polarity of the dielectric layer can hinder charge transport characteristics, which has restricted utilization of polymeric dielectric materials containing polar functional groups. Herein, the electrical characteristics of OTFTs are analyzed depending on the alkyl chain length of organic semiconductors and surface polarity of polymer dielectrics. High-performance dibenzothiopheno[6,5-b:6',5'-f]thieno[3,2-b]thiophene (DBTTT) and newly synthesized its alkylated derivatives (C6-DBTTT and C10-DBTTT) are utilized as organic semiconductors. As dielectric layers, non-polar poly(1,3,5-trimethyl-1,3,5-trivinylcyclitrisiloxane) (pV3D3) and poly(2-cyanoethyl acrylate-co-diethylene glycol divinyl ether) [p(CEA-co-DEGDVE)] with polar cyanide functionality are utilized. The fabricated OTFTs with pV3D3 commonly exhibit the excellent charge transport characteristics. In addition, the OTFT performance is improved with lengthening the alkyl chain in organic semiconductors, which can be attributed to the molecular orientation of semiconductors. On the other hand, non-alkylated DBTTT OTFTs with polar p(CEA-co-DEGDVE) show relatively poor electrical characteristics, while their performance is drastically enhanced with the alkylated DBTTTs. The ultraviolet photoelectron spectroscopy (UPS) reveals that surface polarity of the dielectric layer can be abated with alkyl chain in organic semiconductors. It is believed that this study can provide a useful insight to optimize dielectric/semiconductor interface to achieve high-performance OTFTs.

Performance enhancement of solution-processed p-type CuI TFTs by self-assembled monolayer treatment

Self-assembled monolayer (SAM) treatment of gate dielectrics plays a key role in the improvement of the electrical performance of organic thin-film transistors (TFTs) by reducing the interface traps. However, it is rarely explored in inorganic TFTs owing to possible irreversible damage to very thin SAMs during the sputtering and high-temperature annealing processes that are often used to deposit inorganic materials. Here, the feasibility of performance enhancement of inorganic p-type Zn-doped CuI TFTs is explored by a SAM treatment using 3-aminopropyltriethoxysilane (APTES) on the gate dielectric. Our result shows that the TFT performance is significantly enhanced with a 50% reduction in the interface trap density, a 326% increase in the hole mobility from 0.38 to 1.24 cm2V-1s-1and a 5-fold increase in the current on/off ratio from 2.6 × 106 to 1.1 × 107. In addition, the bias stress stability of the TFTs after the treatment is dramatically enhanced by a factor of 10 due to the improved interface properties. The threshold voltage shift is reduced from +19.6 to +1.8 V after 3600 s positive bias stress. The simple yet effective interface treatment approach may have great potential in the fabrication of high-performance inorganic p-type electronic devices.

Amorphous Fluorinated Acrylate Polymer Dielectrics for Flexible Transistors and Logic Gates with High Operational Stability.

Fluorinated amorphous polymeric gate-insulating materials for organic thin-film transistors (OTFTs) not only form hydrophobic surfaces but also significantly reduce traps at the interface between the organic semiconductor and gate insulator. Therefore, these polymeric materials can enhance the OTFT's operation stability. In this study, we synthesized a new polymeric insulating material series composed of acrylate and fluorinated functional groups (with different ratios) named MBHCa-F and used them as gate insulators for OTFTs and in other applications. The insulating features of the MBHCa-F polymers, including surface energy, surface atomic content properties, dielectric constant, and leakage current, were clearly analyzed with respect to the content of the fluorinated functional groups. At higher fluorine-based functional group content, the polymeric series exhibited higher fluorine-based contents at the surface and superior electrical properties, such as field-effect mobility and driving stability, at OTFTs. Therefore, we believe that this study provides a substantial method for synthesizing polymeric insulating materials to enhance the operational stability and electrical performance of OTFTs.

Role of the Alkylation Patterning in the Performance of OTFTs: The Case of Thiophene-Functionalized Triindoles

Organic semiconductors have emerged as potential alternatives to conventional inorganic materials due to their numerous assets and applications. In this context, the star-shaped triindole core stands as a promising system to design new organic materials with enticing charge-transporting properties. Herein, we present the synthesis of three thiophene-containing triindole derivatives that feature N-alkyl chains of different lengths, from methyl to decyl. The impact of the alkylation patterning on the crystallinity of the thin films and their resultant performance as semiconductor have been analyzed. All derivatives displayed p-type semiconductor properties, as demonstrated via both TOF measurements and integration in organic thin-film transistor (OTFT) devices. The attachment of longer alkyl chains and the functionalization of the silicon substrate with octadecyltrichlorosilane (OTS) prompted better OTFT characteristics, with a hole mobility value up to 5 × 10−4 cm2 V−1 s−1. As elucidated from the single crystal, this core is arranged in a convenient cofacial packing that maximizes the π-overlapping. The analysis of the thin films also corroborates that derivatives possessing longer N-alkyl chains confer a higher degree of order and a more adequate morphology.

Optimization of Alkyl Side Chain Length in Polyimide for Gate Dielectrics to Achieve High Mobility and Outstanding Operational Stability in Organic Transistors

Alkyl chain modification strategies in both organic semiconductors and inorganic dielectrics play a crucial role in improving the performance of organic thin-film transistors (OTFTs). Polyimide (PI) and its derivatives have received extensive attention as dielectrics for application in OTFTs because of flexibility, high-temperature resistance, and low cost. However, low-temperature solution processing PI-based gate dielectric for flexible OTFTs with high mobility, low operating voltage, and high operational stability remains an enormous challenge. Furthermore, even though di-n-decyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT) is known to have very high mobility as an air-stable and high-performance organic semiconductor, the C10-DNTT-based TFTs on the PI gate dielectrics still showed relatively low mobility. Here, inspired by alkyl side chain engineering, we design and synthesize a series of PI materials with different alkyl side chain lengths and systematically investigate the PI surface properties and the evolution of organic semiconductor morphology deposited on PI surfaces during the variation of alkyl side chain lengths. It is found that the alkyl side chain length has a critical influence on the PI surface properties, as well as the grain size and molecular orientation of semiconductors. Good field-effect characteristics are obtained with high mobilities (up to 1.05 and 5.22 cm2/Vs, which are some of the best values reported to date), relatively low operating voltage, hysteresis-free behavior, and high operational stability in OTFTs. These results suggest that the strategy of optimizing alkyl side-chain lengths opens up a new research avenue for tuning semiconductor growth to enable high mobility and outstanding operational stability of PI-based OTFTs.

OTFT Biosensor on Flexible Substrates for Human Health Monitoring: a Review

With the development of the Internet of Things era, smart wearable devices have gradually entered people’s daily life, and these devices have provided great convenience to human beings in terms of real-time detection of human health and information transmission. Smart wearable electronic devices have also been gradually developed from smart bracelets, smart watches, and smart glasses into fibers or textiles. Organic thin-film transistor (OTFT) as a key component of flexible electronic devices has an important role in signal amplification, signal filtering, signal transmission, signal reception, and storage. In this article, we introduce the recent progress of OTFT based on 2-D film and 1-D fiber from the substrate of OTFT and focus on the preparation method and performance of OTFT based on 1-D fiber from the conductive fiber. In addition, some practical applications of OTFT sensors in human health detection are introduced. Index Electronic textiles, organic thin-film transistor (OTFT), smart wearables.

Impact of polymer gate dielectric capacitance and gate leakage current on solution-based polymer organic thin film transistor

The polymer dielectric material plays a vital role in a solution-based organic thin-film transistor (OTFT), leading to higher performance, lower operating voltage, lesser gate leakage, and higher operating frequency. In this work, crosslinked polymer gate dielectric is used to be suitable for the photolithography process and integrated circuit applications. The impact of variation of crosslinker in the polymer dielectric on OTFT performance in terms of the electrical properties such as dielectric constant and dielectric leakage current is studied. The set of electrical characterizations is performed for the crosslinked dielectrics to get the optimum value of the crosslinker. In addition, the shadow mask-based OTFT is fabricated to evaluate the gate capacitance and the gate current leakage. The extracted model parameters from characterisation of dielectric and photolithography-based OTFT is used in spice level-1 model to simulate the characteristics of the fabricated OTFTs.

Poly(ionic liquid) Gating Materials for High-Performance Organic Thin-Film Transistors: The Role of Block Copolymer Self-Assembly at the Semiconductor Interface.

The widespread realization of wearable electronics requires printable active materials capable of operating at low voltages. Polymerized ionic liquid (PIL) block copolymers exhibit a thickness-independent double-layer capacitance that makes them a promising gating medium for the development of organic thin-film transistors (OTFTs) with low operating voltages and high switching speed. PIL block copolymer structure and self-assembly can influence ion conductivity and the resulting OTFT performance. In an OTFT, self-assembly of the PIL gate on the semiconducting polymer may differ from bulk self-assembly, which would directly influence electrical double-layer formation. To this end, we used poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as a model semiconductor for our OTFTs, on which our PILs exhibited self-assembly. In this study, we explore this critical interface by grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) of P(NDI2OD-T2) and a series of poly(styrene)-b-poly(1-(4-vinylbenzyl)-3-butylimidazolium-random-poly(ethylene glycol) methyl ether methacrylate) (poly(S)-b-poly(VBBI+[X]-r-PEGMA)) block copolymers with varying PEGMA/VBBI+ ratios and three different mobile anions (where X = TFSI-, PF6-, or BF4-). We investigate the thin-film self-assembly of block copolymers as a function of device performance. Overall, a mixed orientation at the interface leads to improved device performance, while predominantly hexagonal packing leads to nonfunctional devices, regardless of the anion present. These PIL gated OTFTs were characterized with a threshold voltage below 1 V, making understanding of their structure-property relationships crucial to enabling the further development of high-performance gating materials.

Top-Contact Pentacene-Based Organic Thin Film Transistor with a Rubrene Layer in between Pentacene-Electrode Interface

Top-contact pentacene-based organic thin-film transistor (OTFT) with a rubrene interlayer in between pentacene-electrode [Al, Au] interface is reported. A study of the interlayer behavior of rubrene shows enhanced device performance of OTFT than that of the conventional OTFTs with only metal source-drain electrodes [Al, Au]. The improved performances of the device are attributed to the smoother pentacene surface for high carrier injection and mobility and decrease in contact resistance of the device. The device with a rubrene interlayer in between pentacene/Au interface shows better field-effect mobility of 3.3 cm2 v−1 s−1, On/Off ratio of 1.22 × 107, the threshold voltage of −3.8 V, and sub-threshold-slope of 0.31 V decade−1 respectively.

Nitrogen-Containing Perylene Diimides: Molecular Design, Robust Aggregated Structures, and Advances in n-Type Organic Semiconductors.

ConspectusOrganic semiconductors (OSCs) have attracted much attention because of their potential applications for flexible and printed electronic devices and thus have been extensively investigated in a variety of research fields, such as organic chemistry, solid-state physics, and device physics and engineering. Organic thin-film transistors (OTFTs), a class of OSC-based devices, have been expected to be an alternative of silicon-based metal oxide semiconductor field-effect transistors (MOSFETs), which is the indispensable element for most of the current electronic devices. However, the noncovalently aggregated, van der Waals solid nature of the OSCs, by contrast to covalently bound silicon, conventionally exhibits lower carrier mobilities, limiting the practical applications of OTFTs. In particular, electron-transporting (i.e., n-type) OSCs lag behind their hole-transporting (p-type) counterparts in carrier mobility and ambient stability as OTFTs. This is primarily because of the difficulty in achieving compatibility between the aggregated structure exhibiting excellent carrier mobility and that with enough electron affinity. Recent understandings of carrier transport in OSCs explain that large and two-dimensionally isotropic transfer integrals coupled with small fluctuations are crucial for high carrier mobilities. In addition, from a practical point of view, the compatibility with practical device processes is highly required. Rational molecular design principles, therefore, are still demanded for developing OSCs and OTFTs toward high-end device applications.Herein, we will show our recent progress in the development of n-type OSCs with the key π-electron core (π-core) of benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI) on the basis of single-crystal OTFT technologies and the band-transport model enabled by two-dimensional molecular packing arrangements. The critical point is the introduction of electronegative nitrogen atoms into the π-core: the nitrogen atoms in BQQDI not only deepen the molecular orbital energies but also allow hydrogen-bonding-like attractive intermolecular interactions to control the aggregated structures, unlike the conventional role of the nitrogen introduced into OSCs only for the former role. Hence, the BQQDI analogues exhibit air-stable OTFT behavior and two-dimensional brickwork packing structures. Specifically, phenethyl-substituted analogue (PhC2-BQQDI) has been shown as the first principal BQQDI-based material, demonstrating solution-processable thin-film single crystals, fewer anisotropic transfer integrals, and an effective suppression of molecular motions, leading to band-like electron-transport properties and stress-durable n-channel OTFT performances, in conjunction with the support of computational calculations. Insights into more fundamental points of view have been found by side-chain derivatization and OTFT studies on polycrystalline and single-crystal films. We hope that this Account provides readers with new strategies for designing high-performance OSCs by two-dimensional control of the aggregated structures.

Organic Thin‐Film Transistors as Cannabinoid Sensors: Effect of Analytes on Phthalocyanine Film Crystallization (Adv. Funct. Mater. 7/2022)

Cannabinoid Sensors In article number 2107138, Adam J. Shuhendler, Benoît H. Lessard, and co-workers use phthalocyanine (Pc) based organic thin-film transistors (OTFTs) in combination with a cannabinoid-sensitive chromophore (Fast Blue BB) to detect Δ9-tetrahydrocannabinol (THC). Choice of the Pc central atoms and peripheral substitutions provides unique interactions between the Pc, cannabinoid, and chromophore, inducing a significant film recrystallization leading to changes in OTFT performance.

Organic Thin‐Film Transistors as Cannabinoid Sensors: Effect of Analytes on Phthalocyanine Film Crystallization

AbstractWith a growing international trend of Cannabis legalization, there is a present need for on‐the‐spot, low cost, and rapid detection of cannabinoids. Here, relationships between thin‐films of phthalocyanines (Pcs) with a variety of central, peripheral, and axial substituents and their response to the cannabinoid Δ9‐tetrahydrocannabinol (THC), with and without a cannabinoid‐sensitive chromophore (Fast Blue BB) are investigated through organic thin‐film transistor (OTFT) performance. X‐ray diffraction and UV–vis absorption spectroscopy measurements demonstrate significantly altered film morphologies and the formation of new crystal orientations in response to analytes, which are corroborated by scanning electron microscopy. Electron paramagnetic resonance further corroborates shifting crystal structures in response to THC and also reveals the formation and promotion of Pc radical species through THC‐metal coordination. With exposure to THC, aluminum chloride Pc generates the largest physical film changes as well as the largest changes in OTFT performance. These findings suggest that the semiconductor thin‐film morphologies in Pc‐based OTFT sensors are not static in the presence of analytes and that the sensing response is driven both by strong analyte‐Pc coordination and bulk film restructuring to accommodate these interactions.

Towards the Bisbenzothienocarbazole Core: A Route of Sulfurated Carbazole Derivatives with Assorted Optoelectronic Properties and Applications.

Ladder-type molecules, which possess an extended aromatic backbone, are particularly sought within the optoelectronic field. In view of the potential of the 14H-bis[1]benzothieno[3,2-b:2’,3’-h]carbazole core as a p-type semiconductor, herein we studied a set of two derivatives featuring a different alkylation patterning. The followed synthetic route, involving various sulfurated carbazole-based molecules, also resulted in a source of fluorophores with different emitting behaviors. Surprisingly, the sulfoxide-containing fluorophores substantially increased their blue fluorescence with respect to the nearly non-emitting sulfur counterparts. On this basis, we could shed light on the relationship between their chemical structure and their emission as an approach for future applications. Considering the performance in organic thin-film transistors, both bisbenzothienocarbazole derivatives displayed p-type characteristics, with hole mobility values up to 1.1 × 10−3 cm2 V−1 s−1 and considerable air stability. Moreover, the role of the structural design has been correlated with the device performance by means of X-ray analysis and the elucidation of the corresponding single crystal structures.