Effect of source and drain electrode positions on the performance of bottom gate organic thin film transistor

Abstract

In recent years several novel technologies have emerged on commercial level. Organic electronics is one such technology that has created new avenues for the development of flexible, robust, and cost-effective electronic devices. Transistor developed using organic materials are called organic thin film transistors (OTFT). Transistor is elementary component of any electronic device, any variation in the size or performance of the transistors reflects directly on the overall performance of the electronic devices. Bottom gate bottom contact (BGBC) OTFT is commonly employed single gate organic transistor owing to its simple architecture and easy fabrications. Since in organic semiconductor material carrier mobility of charges is lower, hence its overall performance declines. As a result, its application in electronic circuits becomes limited. Therefore, to enhance the performance of BGBC OTFT and facilitate the optimal charge mobilisation inside organic semiconductor layer i.e., OSC, improvement in the architecture of BGBC is deemed necessary. In this research article the performance of BGBC OTFT is analysed for different positions of electrodes viz. source and drain embedded inside the OSC layer. The study signifies the effect of electrode positions on performance optimization of BGBC OTFT without changing the materials, dimensions, or the operating voltage regime. It has been found that for 30 nm thick OSC layer, the electrodes should ideally be placed between 5 nm to 10 nm above the junction of OSC and dielectric layer inside OSC layer for optimal results.