TCAD based study of parameters affecting the electrical performance of organic thin-film transistors

Abstract

Field effect transistors (FETs) are widely used in integrated circuits of electronic devices. Mostly silicon-based FETs are used for commercial purposes, but with the recent advancement in organic electronics – organic thin-film transistors (OTFTs) have become trending research topics nowadays. Modeling of organic FETs helps in understanding various electrical characteristics of the device such as on current, threshold voltage, off current, on/off ratio, and so on. Optimization of these factors is needed to enhance the working and overall performance of thin-film transistors. In this paper, the comparative study of the device having bottom-gate with electrode contact on top and bottom of organic semiconductor has been done based on the effects of organic semiconductor's thickness variation, dielectric thickness variation, and dielectric material variation on pentacene based organic transistors.