Effect of temperature modulation on the performance of top contact bottom gate organic thin film transistor

Abstract

This research article investigates the influence of temperature variations on the performance parameters of Top Contact Bottom Gate (TCBG) Organic Thin Film Transistors (OTFTs). Employing the Arrhenius equation and Schottky emission model, the study explores temperature-dependent charge carrier mobility and injection mechanisms. Analyzing a wide range of parameters, the research unveils a complex interplay between temperature and OTFT behavior. The linear and saturation mobilities exhibit a decline due to enhanced carrier-phonon interactions and lattice vibrations. Transconductance and ION/IOFF ratio display a concomitant decrease at higher temperatures, indicative of the heightened susceptibility of OTFT performance to temperature fluctuations. The depreciation in subthreshold slope and threshold voltage with rising temperatures underscores the influence of temperature on trap states. The research emphasizes the importance of considering temperature’s impact during OTFT design for diverse applications, enhancing the reliability and functionality of organic electronic devices.