Impact of polymer gate dielectric capacitance and gate leakage current on solution-based polymer organic thin film transistor

Abstract

The polymer dielectric material plays a vital role in a solution-based organic thin-film transistor (OTFT), leading to higher performance, lower operating voltage, lesser gate leakage, and higher operating frequency. In this work, crosslinked polymer gate dielectric is used to be suitable for the photolithography process and integrated circuit applications. The impact of variation of crosslinker in the polymer dielectric on OTFT performance in terms of the electrical properties such as dielectric constant and dielectric leakage current is studied. The set of electrical characterizations is performed for the crosslinked dielectrics to get the optimum value of the crosslinker. In addition, the shadow mask-based OTFT is fabricated to evaluate the gate capacitance and the gate current leakage. The extracted model parameters from characterisation of dielectric and photolithography-based OTFT is used in spice level-1 model to simulate the characteristics of the fabricated OTFTs.