Crystalline Silicon Research Articles

A novel approach of polychiral single walled carbon nanotubes functionalization for heterojunction solar cell

This study introduces an innovative method for functionalizing polychiral single-walled carbon nanotubes (f-SWCNTs) by depositing thin films onto n-type crystalline silicon (n-Si), thereby creating efficient heterojunction solar cells. The approach capitalizes on the effective charge separation facilitated by the built-in potential resulting from the functionalization of polychiral SWCNTs, leading to enhanced electron transfer from f-SWCNTs to Si driven by functional groups. The resulting f-SWCNT/Si heterojunction device demonstrates remarkable performance, attributed to the high optical absorption and improved charge separation and transfer mechanisms of the f-SWCNT film. Moreover, by adjusting the concentration of f-SWCNTs, the film properties and overall device performance have been customized, achieving a notable power conversion efficiency of 12 %. These discoveries serve as a foundation for the advancement of highly desirable, efficient, cost-effective, and broadband high-performance f-SWCNT/Si heterojunction solar cells

The Effect of Quantum Dots on the Performance of the Solar Cell

Quantum dot solar cells are currently the subject of research in the fields of renewable energy, photovoltaics and optoelectronics, due to their advantages which enables them to overcome the limitations of traditional solar cells. The inability of ordinary solar cells to generate charge carriers, which is prevents them from contributing to generate the current in solar cells. This work focuses on modeling and simulating of Quantum Dot Solar Cells based on InAs/GaAs as well as regular type of GaAs p-i-n solar cells and to study the effect of increasing quantum dots layers at the performance of the solar cell. The low energy of the fell photons considers as one of the most difficult problems that must deal with. According to simulation data, the power conversion efficiency increases from (12.515% to 30.94%), current density rises from 16.4047 mA/cm2 for standard solar cell to 39.4775 mA/cm2) using quantum dot techniques (20-layers) compared to traditional type of GaAs solar cell. Additionally, low energy photons' absorption range edge expanded from (400 to 900 nm) for quantum technique. The results have been modeled and simulated using (SILVACO Software), which proved the power conversion efficiency of InAs/GaAs quantum dot solar cells is significantly higher than traditional (p-i-n) type about (247%)

Impedance dynamics in tandem solar cells based on c-Si with upper layers of CsPbBr3 (CsPbI3) perovskite nanocrystals

The application of an additional nanoparticle layer is a common practice for enhancing the optical and electrical properties of third-generation solar cells. In this study, we present the results of impedance spectroscopy (IS) for modified solar cells using Nyquist and Bode diagrams. The structure investigated consists of a conventional double junction based on crystalline silicon (c-Si) coated with thin films of inorganic perovskite nanocrystals (NC) of lead halides CsPbI3 and CsPbBr3. The latter are characterized by a significant phonon disorder, which leads to unique electron-phonon interactions and dielectric responses. The IS results indicate that, under the same conditions, the measured Nyquist plots align well with the simulated ones. An equivalent circuit model is proposed, featuring ohmic resistance, recombination resistance, and geometric capacitance. These elements arise due to charge accumulation, charge transfer resistance, and/or additional interfacial electronic states. The study finds that the introduction of a CsPbI3 layer enhances the photoresponse under bias conditions, but this photoresponse leads to a decrease in DC conductivity. In contrast, the addition of a CsPbBr3 layer obstructs the photoresponse under bias while slightly improving the photoresponse in the absence of an applied voltage. The results obtained contribute to the improvement of tandem solar cell characteristics featuring top layers of perovskite nanocrystals.

Optimizing Geometry and ETL Materials for High-Performance Inverted Perovskite Solar Cells by TCAD Simulation.

Due to the optical properties of the electron transport layer (ETL) and hole transport layer (HTL), inverted perovskite solar cells can perform better than traditional perovskite solar cells. It is essential to compare both types to understand their efficiencies. In this article, we studied inverted perovskite solar cells with NiOx/CH3NH3Pb3/ETL (ETL = MoO3, TiO2, ZnO) structures. Our results showed that the optimal thickness of NiOx is 80 nm for all structures. The optimal perovskite thickness is 600 nm for solar cells with ZnO and MoO3, and 800 nm for those with TiO2. For the ETLs, the best thicknesses are 100 nm for ZnO, 80 nm for MoO3, and 60 nm for TiO2. We found that the efficiencies of inverted perovskite solar cells with ZnO, MoO3, and TiO2 as ETLs, and with optimal layer thicknesses, are 30.16%, 18.69%, and 35.21%, respectively. These efficiencies are 1.5%, 5.7%, and 1.5% higher than those of traditional perovskite solar cells. Our study highlights the potential of optimizing layer thicknesses in inverted perovskite solar cells to achieve higher efficiencies than traditional structures.

Light-trapping by wave interference in intermediate-thickness silicon solar cells

The power conversion efficiency of crystalline silicon (c − Si) solar cells have witnessed a 2.1% increase over the last 25 years due to improved carrier transport. Recently, the conversion efficiency of c − Si cell has reached 27.1% but falls well below the Shockley-Queisser limit as well as the statistical ray-optics based 29.43% limit. Further improvement of conversion efficiency requires reconsideration of traditional ray-trapping strategies for sunlight absorption. Wave-interference based light-trapping in photonic crystals (PhC) provides the opportunity to break the ray-optics based 4n 2 limit and offers the possibility of conversion efficiencies beyond 29.43% in c − Si cells. Using finite difference time domain simulations of Maxwell’s equations, we demonstrate photo-current densities above the 4n 2 limit in 50 − 300µm-thick inverted pyramid silicon PhCs, with lattice constant 3.1µm. Our 150µm-thick PhC design yields a maximum achievable photo-current density (MAPD) of 45.22mA/cm 2. We consider anti-reflection coatings and surface passivation consisting of SiO 2 − SiN x − Al 2 O 3 stacks. Our design optimization shows that a 80 − 120 − 150nm stack leads to slightly better solar light trapping in photonic crystal cells with thicknesses <50µm, whereas the 80 − 40 − 20nm stack performs better for cells with thicknesses >100µm. We show that replacing SiN x with SiC may improve the MAPD for PhC cells thinner than 100µm. For a fixed lattice constant of 3.1µm, we find no significant improvement in the solar absorption for 50 and 100µm-thick cells relative to a 15µm cell. A substantial improvement in the MAPD is observed for the 150µm cell, but there is practically no improvement in the solar light absorption beyond 150µm thickness.

Optimization of Electrical and Optical Losses in Thin c-Si Bifacial PERC Solar Cells to Module Level Through Modeling

Optimization of Electrical and Optical Losses in Thin c-Si Bifacial PERC Solar Cells to Module Level Through Modeling

Inorganic Pb-Sn Perovskite Solar Cells with CF3-PA Internal Defect Passivation Strategy

Abstract The volatile organic components and heavy metal components in traditional perovskite solar cells (PSCs) have raised environmental and stability concerns for their large scale application. To solve the above two problems, the advancement of inorganic Pb-Sn PSCs technology has progressed at a remarkable pace over a relatively short period. Replacing Pb with Sn in PSCs not only significantly improves the environmental problems caused by the high toxicity of Pb, but also forms solar cells with lower bandgap, which is beneficial for light absorption and utilization, especially in the near-infrared band. In this work, a composite inorganic perovskite was utilized, CsPb0.6Sn0.4I3, and enhanced the PSCs performance by passivating the perovskite using 4-trifluoromethyl-phenylammonium (CF3-PA) additives. The highest efficiency of the champion device reached 13.04%, demonstrating its potential as a candidate for low bandgap PSCs.

Transparent Hole‐Selective Molybdenum Oxide Passivating Contact with Chlorine‐Based Interlayer Enabling 22.5% Efficient Silicon Solar Cells

The need to increase transparency in existing passivating contacts for crystalline silicon solar cells has motivated the development of transparent contacts based on transition metal oxides (TMOs). Among hole‐selective materials, molybdenum oxide (MoOx) has achieved the greatest success so far. However, despite providing low contact resistivity, MoOx relies on an intrinsic hydrogenated amorphous silicon (a‐Si:H(i)) interlayer to achieve high levels of surface passivation and thus high open‐circuit voltage at a device level, partially defeating the objective of improved transparency. Herein, we report unprecedented performance for a‐Si:H‐free MoOx‐based contacts by employing an alternative passivating interlayer based on a well‐engineered chlorine‐containing Al‐alloyed titanium oxide/titanium dioxide (AlyTiOx/TiO2 )stack. The resulting AlyTiOx/TiO2/MoOx stack achieved record levels of passivation, reaching J0 values as low as 16 fA cm−2, closer to values reported for a‐Si:H‐based contacts, while maintaining lower contact resistivity, well below 100 mΩ cm−2. Additionally, the stack presents improved transparency compared to a‐Si:H‐based contacts, with gains in short‐circuit current density of at least 0.8 mA cm−2. The work pushes the performance of hole‐selective passivating contacts based on TMOs to new levels, enabling a record efficiency of 22.53% for cells with fully transparent hole‐selective passivating contacts. This work serves as an important stepping stone toward low‐thermal‐budget, simple manufacturing of high‐efficiency solar cells.

Efficiency improvement and application prospects of solar photovoltaic power generation

The background of efficiency improvement and application prospects of solar PV power generation reflects a dynamic and evolving landscape. As technology continues to advance and as society places greater emphasis on sustainability and clean energy, solar PV is expected to play an increasingly significant role in meeting the worlds energy needs while mitigating the environmental impact of energy production. This paper is mainly about how to improve the efficiency of solar photovoltaic power generation and the application of solar power generation. We put together an article mainly by looking up technology and summarizing other peoples opinions. Among them, we have studied the principle of solar power supply systems in the first part. The author analyzed how to choose monocrystalline silicon and polysilicon and how they can improve the efficiency and the use of HJT batteries and PERC solar cells. Both HJT and PERC applications can greatly improve efficiency

Advancements and Challenges in Wide‐Bandgap Perovskite Solar Cells: From Single Junction to Tandem Solar Cells

The exceptional optoelectronic performance and cost‐effectiveness of manufacturing have propelled organic–inorganic hybrid perovskite solar cells (PSCs) into the spotlight within the photovoltaic community. Currently, the single‐junction PSCs have achieved a certified power conversion efficiency surpassing 26%, edging closer to the illustrious Shockley–Queisser theoretical limit. To further enhance device performance, researchers are currently directing their attention toward the integration of wide‐bandgap (WBG) perovskites (Eg > 1.60 eV) as top subcells in conjunction with narrow‐bandgap materials, such as perovskite, crystalline silicon, and copper indium gallium selenium, to construct multijunction tandem devices that maximize solar spectral utilization and minimize thermal losses. However, WBG perovskites encounter challenges associated with suboptimal crystal quality, high defect density, and severe phase separation, leading to significant voltage losses and inferior performance. In this regard, extensive research has been conducted, yielding significant findings. This review article summarizes the advancements in composition engineering, additive engineering, and interface engineering of WBG PSCs. Furthermore, the applications of WBG PSCs in various tandem solar cells and their development are discussed. Finally, future prospects for the development of WBG PSCs are outlined.

The study of adsorption mechanisms and kinetics of recovering Ag and Al on the bioleaching of end-of-life crystalline silicon photovoltaic cells

The steady growth of end-of-life (EoL) crystalline silicon (c-Si) photovoltaic (PV) modules requires the development of recycling technologies to guarantee sustainable circular development for the environment. Therefore, we use cyanogenic bioleaching to recover valuable metals from c-Si PV cells. The kinetic mechanism of the leaching process was evaluated. In addition, the complexation of cyanide on the metal surface was further explored from the perspective of adsorption models. The experimental data show that bioleaching can effectively recover Ag and Al, and the leaching process is controlled by chemical reaction and diffusion. On the metal surface, the C-terminal adsorption of CN– is more advantageous than the N-terminal vertical adsorption. CN– is prone to mutual isomerization between the more stable configurations on the metal surface, and rotation is prone to occur between the adsorption configurations. The results of the charge density difference showed that when CN– was adsorbed on the metal surface, the charge was transferred from the metal surface to the cyanide radical, and the electrons were mainly obtained by C, while N lost part of the electrons. Hence, the results of this study confirm that the culture of Pseudomonas fluorescens can recover metals from retired c-Si PV cells.

Optimization strategies for metallization in n-type crystalline silicon TOPCon solar cells: Pathways to elevated fill factor and enhanced efficiency

In advancing photovoltaic technology, optimizing the metallization process is crucial for balancing electrical conductivity and optical performance in solar cell fabrication. This process directly impacts the efficiency and quality of solar cells, traditionally measured by the fill factor (FF). Historically, efforts have focused on evolving metal contacts to reduce optical shading and series resistance, which degrade solar cell efficiency. Our study enhances n-type Tunnel Oxide Passivated Contact (n-TOPCon) solar cells by optimizing screen-printing metallization, particularly by examining the effects of squeegee speeds. Employing a mix of experimental and analytical methodologies, we aimed to identify optimal conditions that improve electrical and optical performance, thereby elevating cell efficiency. Our findings indicate that a squeegee speed of 170 mm/s substantially boosts solar cell performance, evidenced by a current density (Jsc) of 38.96 mA/cm2, open-circuit voltage (Voc) of 684.29 mV, fill factor (FF) of 78.77 %, and a power conversion efficiency (PCE) of 21.00 %. Further, dark I–V measurements confirmed a shunt resistance (Rsh) of 6.25 × 106 Ω and a reduced series resistance (Rs) of 6.48 Ω, underscoring the significance of precise metallization in reducing resistive losses and enhancing efficiency. Future research will explore innovative materials and cutting-edge printing techniques beyond squeegee speed adjustments. The potential incorporation of nanomaterials and conducting polymers aims to refine the metallization process further, promising to push the boundaries of efficiency and cost-effectiveness. This progression is essential for advancing n-TOPCon solar cell development, setting new industry standards, and propelling the sustainable energy movement.

Continuous distribution of interface states in n-type double-side poly-Si/SiOx passivating contact solar cells

Advanced passivation contact in high-efficiency silicon solar cells plays an important role for the sake of minimizing recombination losses. A stack of heavily doped polycrystalline silicon (poly-Si) and tunnel SiOx contact has attracted much attention, benefitting from its excellent characteristics of carrier selectivity and passivation, and which has been successfully applied in double-side poly-Si/SiOx passivating contact solar cells. Note that characteristics analysis of defects at tunnel SiOx/c-Si (crystalline silicon) interface remains an issue of concern. Herein, we observe capacitance transient spectroscopy arise from both electron and hole traps in the passivating contact structure of poly-Si(p+)/tunnel SiOx/c-Si(n). Subsequently, we propose a skillful procedure of deep-level transient spectroscopy (DLTS) measurement to confirm that the observed electron and hole traps are located at the tunnel SiOx/c-Si interface but not in the bulk of the c-Si substrate. Finally, we show a clear physical picture of continuous energy distribution for interface states.

Multilayer stacked crystalline silicon switch with nanosecond-order switching time.

To realize compact and denser photonic integrated circuits, three-dimensional integration has been widely accepted and researched. In this article, we demonstrate the operation of a 3D integrated silicon photonic platform fabricated through wafer bonding. Benefiting from the wafer bonding process, the material of all layers is c-Si, which ensures that the mobility is high enough to achieve a nanosecond response via the p-i-n diode shifter. Optical components, including multimode interferences (MMIs), waveguide crossing, and Mach-Zehnder interferometer (MZI)-based switch, are fabricated in different layers and exhibit great performance. The interlayer coupler and crossing achieve a 0.98 dB coupling loss and <-43.58 dB cross talk, while the crossing fabricated in the same layer shows <-36.00 dB cross talk. A nanosecond-order switch response is measured in different layers.

Photoluminescence Spectroscopy Sheds New Light on Silicon Microchip Functional Properties.

In this study, we demonstrate that photoluminescence spectroscopy probing local interaction and dynamics at the fundamental level is a versatile tool for testing and evaluation of semiconducting materials as well as microscale chips based on them. Monocrystalline silicon, which is still an undisputed leader among semiconductors in microelectronics, exhibits very low photoluminescence emission additionally shielded by the metallization and passivating layers at the integrated circuit level. To unleash the full potential of photoluminescence spectroscopy for advanced testing and evaluation of the functional properties of the silicon microchips, new essential conceptually built approaches are required that overcome this problem. Here, we report on the first fundamental research-based application of a potentiometric dye to sense the electric field of operational silicon chips. Furthermore, we demonstrate high sensitivity of crystalline silicon phonon-assisted photoluminescence to local temperature in the 27-64 °C range. Our results show that sensing and mapping of thermal and electric field distributions using photoluminescence can enable precision testing of the structure, function, operation, and security, not only at the component level but also at the level of the entire integrated circuit.

Optimal Composition of the Sby(S1−x,Sex)3 Ternary Absorber for High Efficiency Solar Cells

Solar cells based on Sb2(S1−x,Sex)3 ternary compounds have shown the highest reported efficiency value compared to their Sb2Se3 and Sb2S3 counterparts in antimony chalcogenide technology. However, the reported record efficiencies for these new emergent solar cells are still well below the theoretical values according to their bandgap value or for the traditional solar cells in the thin film technology. This article presents an analysis regarding the optimal composition that guarantees an increase in efficiency in the manufacture of Sby(S1−x,Sex)3 solar cells, as well as the proposal of a new synthesis method that allows obtaining the ternary compound with the calculated optimal composition. From theoretical considerations, a composition of Sb1.85(S0.63,Se0.42)3 is obtained. This composition is equivalent to optimal values Se/(S + Se) = 0.4 and Sb/(S + Se) = 0.88. The results of the new proposed synthesis method are presented and discussed.

Enhancing shift current response via virtual multiband transitions

Materials exhibiting a significant shift current response could potentially outperform conventional solar cell materials. The myriad of factors governing shift-current response, however, poses significant challenges in finding such strong shift-current materials. Here we propose a general design principle that exploits inter-orbital mixing to excite virtual multiband transitions in materials with multiple flat bands to achieve an enhanced shift current response. We further relate this design principle to maximizing Wannier function spread as expressed through the formalism of quantum geometry. We demonstrate the viability of our design using a 1D stacked Rice-Mele model. Furthermore, we consider a concrete material realization - alternating angle twisted multilayer graphene (TMG) - a natural platform to experimentally realize such an effect. We identify a set of twist angles at which the shift current response is maximized via virtual transitions for each multilayer graphene and highlight the importance of TMG as a promising material to achieve an enhanced shift current response at terahertz frequencies. Our proposed mechanism also applies to other 2D systems and can serve as a guiding principle for designing multiband systems that exhibit an enhanced shift current response.

Environmental impact assessment of the manufacture and use of N- type and P-type photovoltaic modules in China

For a long time, solar power has been considered a clean and non-polluting energy source because it absorbs sunlight without consuming other energy or materials and does not emit pollutants. Nevertheless, the manufacturing and end-of-life stages of solar power systems leave an environmental footprint and produce pollutants. Hence, a global perspective on photovoltaic (PV) systems using life cycle assessment methodology is necessary. Here, we investigated the life cycle impacts of P- and N-type PV modules in terms of their energy consumption, carbon emissions, and human toxicity potential. In addition, the energy payback durations of P- and N-type PV modules were computed. In this study, we used the Life Cycle Assessment Basic Database from the National Engineering Laboratory of Industrial Big Data Application Technology at Beijing University of Technology to create a life cycle assessment model for N-type PV modules. Subsequently, we performed a life cycle assessment of Chinese silicon N-type- and P-type PV modules. The research system encompassed the production processes for metallic silicon materials, solar-grade silicon materials, silicon wafers, cells and modules, utilization, recycling, and other interrelated processes. We found that the production and processing of silicon-to-solar-grade polysilicon feedstock were crucial stages that significantly affected the energy consumption and environment of P- and N-type PV modules in China. The high electricity consumption of this process, combined with the dominance of coal power in China's electricity structure, contributed to the substantial energy consumption and environmental impacts of the PV modules. Therefore, this stage is critical for the low-carbon and environmentally sustainable manufacturing of N-type PV modules in China. Carbon emissions for both the P-type and N-type PV modules were lower only during the cell production phase but higher during the other stages when compared to the P-type and N-type PV modules. The n-type bifacial PV modules yielded the highest return on investment in terms of energy. Different regions and installation types have a substantial impact on the carbon emissions of P-type and N-type PV modules. Projections indicate that the potential to lower carbon emissions from n-type PV modules will increase by 2060.

The amorphization of crystalline silicon by ball milling

The transformation of crystalline silicon to amorphous silicon during ball milling was quantitatively measured by x-ray diffraction and electrochemical methods. Amorphous silicon was found to form rapidly from the very initial stages of ball milling. Simultaneously, the grain size of the crystalline silicon phase decreased. Under extended milling times it was found that a maximum of 86 % of the silicon became amorphous. Similarly, the grain size of the crystalline silicon phase could not be reduced below 6 nm. This transformation followed an Avrami kinetic model, which is consistent with a system which reaches a steady state. These observations suggest a mechanism in which ball milling generates defects, resulting in silicon amorphization and grain size reduction, where the degree of amorphization is limited in extent because there exists a limiting silicon grain size below which defects are no longer formed.

Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation

This work is devoted to the study of the influence of controlled Si(111) surface nitridation on the epitaxial growth of AlN-on-Si nucleation layers with reduced tensile stress on ordered crystalline silicon nitride phase. The Si(111) surface nitridation process was performed at low ammonia flux and substrate temperatures in the range of 700–900 °C and was studied using RHEED and STM techniques. A universal criterion, namely the stage of the nitridation process completion is introduced, taking into account the influence of substrate temperature, ammonia flux and nitridation time. The 100 nm AlN nucleation layer on silicon substrates grown by ammonia molecular beam epitaxy is studied using AFM, XRD, HR-TEM and Raman spectroscopy techniques. The Raman data show that reducing the nitridation temperature from 900 °C to 700 °C not only deteriorates the crystalline quality of the subsequent AlN nucleation layers, but also reduces the residual tensile stress by almost 30 %. In the present contribution, micro-Raman spectroscopy is used to determine the nature of the defects formed during the high temperature growth of the AlN nucleation layers and confirms them to be inversion domains. The HR-TEM technique was used to study the AlN/Si interface in AlN-on-Si nucleation layers grown on a nitridated silicon surface at 700 °C and 900 °C at the optimum stage of the nitridation process completion. HR-TEM images of AlN nucleation layers revealed regions with different AlN/Si(111) interfaces: 1) AlN/amorph-Si3N4/Si, 2) AlN/SiN(8 × 8)/Si, and 3) AlN/Si with a sharp interface boundary. Using fast Fourier transform image analysis, it is shown that the presence of amorphous Si3N4 phase inclusions in the AlN/Si interface boundary introduces tensile stresses in the AlN nucleation layer which can be reduced by lowering the nitridation temperature. The results obtained clearly show that one of the causes of cracks in III-nitride layers grown on silicon substrates is the formation of tensile AlN layers with a high content of the amorphous Si3N4 phase at the AlN/Si interface, which is characteristic of silicon nitridation at elevated temperatures (> 700 °C).