Abstract
Advanced passivation contact in high-efficiency silicon solar cells plays an important role for the sake of minimizing recombination losses. A stack of heavily doped polycrystalline silicon (poly-Si) and tunnel SiOx contact has attracted much attention, benefitting from its excellent characteristics of carrier selectivity and passivation, and which has been successfully applied in double-side poly-Si/SiOx passivating contact solar cells. Note that characteristics analysis of defects at tunnel SiOx/c-Si (crystalline silicon) interface remains an issue of concern. Herein, we observe capacitance transient spectroscopy arise from both electron and hole traps in the passivating contact structure of poly-Si(p+)/tunnel SiOx/c-Si(n). Subsequently, we propose a skillful procedure of deep-level transient spectroscopy (DLTS) measurement to confirm that the observed electron and hole traps are located at the tunnel SiOx/c-Si interface but not in the bulk of the c-Si substrate. Finally, we show a clear physical picture of continuous energy distribution for interface states.
Published Version
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