Leakage Paths Research Articles

Simulation of homogenization behavior of compacted bentonite containing technological voids using modified penalty-based contact model

Low-density zones generated during the bentonite blocks/voids homogenization process in the repository may serve as potentially preferential paths for radionuclide leakage. More importantly, void closure during homogenization process involves complex contact problems, where the stiffness at the contact interface typically undergoes significant fluctuations. In this work, with contact interface stiffness addressed through a step function approach, a modified penal.ty-based contact model was proposed to simulate the contact behavior involved at the gap closure stage of the bentonite/gap assemblage homogenization process. Then, unsaturated infiltration swelling tests on bentonite block (1.7 Mg/m3)/gap (width: 2 mm) assemblages were performed, and the variation of dry density at different hydrated times (0, 24, 72, 168, and 720 h) in specific areas were measured. Based on the results, time-dependent swelling pressure profiles of the assemblage were acquired, while the homogenization process was evaluated. Results reveal that after approximately 40 h of hydration, the gap is completely closed, and the radial stress condition of the compacted bentonite transits progressively from the initial free swelling into a constant volume expansion state. The swelling pressure correspondingly develops quickly to a peak value at 1.8 MPa once the hydration starts, then decreases to a valley value of 1.4 MPa at the complete gap closure, and subsequently begins to increase to the final stable value of 1.8 MPa. Further examination reveals that as hydration advances, dry density of the assemblage converges to the expected final dry density with a maximum residual inhomogeneity of about 2 %. Finally, validations demonstrate that the proposed model can accurately reproduce deformations of the assemblage during the free swelling stage, and the swelling pressure profiles. A comparative analysis was made with the previous approach of identifying gaps as highly deformable materials, revealing that the proposed model overcomes the traditional limitations associated with the separation or penetration behavior occurring between the compacted bentonite and contact boundaries during the gap closure.

Modeling and Validation of the Sealing Performance of High-Pressure Vane Rotary Actuator

The EHRA (Electro-Hydraulic Rotary Actuator), using a vane rotary actuator, has the advantages of a high torque density and integration and is expected to become a joint actuator for robots. This research focuses on the sealing characteristics of various parts of a vane rotary actuator. The average Reynolds equation was used to analyze the leakage characteristics at the gap. A detailed theoretical analysis was conducted on the internal leakage mechanism of a vane rotary actuator using an X-ring as the dynamic seal for the rotor vane. According to the path of internal leakage, different sealing forms are considered as a series or parallel, and the Newton iteration method is used to obtain the total internal leakage characteristics of a vane rotary actuator. It was also considered that the deformation of the vane rotary actuator caused a thicker gap, leading to an increase in internal leakage. The calculation results are consistent with the experimental data. The analysis results indicate that when estimating the internal leakage of a vane rotary actuator, it is necessary to take the pressure of the high-pressure chamber and output shaft position as inputs. This research provides a reference for an analysis of the method of internal leakage for vane rotary actuators. It provides theoretical support for designing a vane rotary actuator with more minor internal leakage and a higher volumetric efficiency.

Influence of Substrate on Sb2Se3/CdS Heterojunction Thin Film Solar Cells and Evaluation of Their Performance by Dark J‐V Analysis

ABSTRACTA simple binary antimony selenide (Sb2Se3) absorber is evolving as an alternative photovoltaic material in thin film solar cells because of its unique properties and easy processing. Sb2Se3 thin films having good crystalline quality are grown via versatile thermal evaporation from pre‐synthesized near stoichiometric compound material on molybdenum‐coated soda lime glass (SLG) and borosilicate glass (BG) substrates. Following the systematic characterizations on the absorber films, substrate configured Sb2Se3/CdS heterojunction devices were fabricated and their photovoltaic characteristics have been studied using current density vs. voltage (J‐V), dark J‐V modeling, external quantum efficiency and capacitance vs. voltage measurements. The power conservation efficiency values of 4.88% and 5.04% were achieved for the devices fabricated on SLG and BG substrates, respectively with deficit in open circuit voltage. The obtained values are higher in comparison to the reported device efficiencies in substrate configured Sb2Se3 solar cells, in which the absorber is prepared through thermal evaporation. To understand the loss in open circuit voltage, a compact equivalent circuit model was considered and identified the contribution of different shunt leakage paths in the devices. In addition to that, the device fabricated on the SLG was stable with minimal changes in its photovoltaic performance for a period spanning over 200 days. The results obtained are encouraging with scope for improving the device performance through interface engineering and back surface passivation strategies.

Leveraging Tunability of Localized-Interfacial Memristors for Efficient Handling of Complex Neural Networks.

A scalable (<130 nm) resistive switching memristor that features both filamentary and interfacial switching aimed at neuromorphic computing is developed in this study. The typically perceived noise or volatility was effectively harnessed as a controlled mechanism for interfacial switching. The multilayer structure for the proposed memristor enhances switching stability by curbing ionic overmigration and mitigating leakage paths. Furthermore, the memristors showcased their reliability by demonstrating more than 15 M cycles in the filamentary mode and 1 M pulses in the interfacial mode. Additionally, retention tests at 85 °C for 104 s confirmed the stability across different states, affirming its reliability as a nonvolatile CMOS-compatible element. While many studies validate performance solely on the MNIST data set, this work also evaluates more complex data sets, demonstrating the robustness of the demonstrated memristor in supervised learning. Specifically, supervised learning simulations on MNIST and fashion MNIST data sets indicated a high learning rate with <4% deviations from numerical training, while offline inference trained on CIFAR-10 and CIFAR-100 data sets revealed <2.5% and <7% deviations caused by programing error accumulation, even with increased memristor counts for these highly complex data sets. Unsupervised learning via spike-timing-dependent plasticity further highlights the potential of the developed memristor in bridging artificial and biological paradigms, offering a significant advance toward efficient and biologically inspired computing architectures.

Risk assessment of hydrogen leakage and explosion in a liquid hydrogen facility using computational analysis

In this study, the dispersion and explosion of liquid hydrogen (LH2) in leakage accidents are investigated using the Flame Accelerator Simulator (FLACS) code. The study focus was a liquid hydrogen research facility in Gimhae, South Korea. Simulations were conducted under various conditions by varying the mass flow rates (0.61 and 0.3 kg/s), directions (lateral in areas with minimal structures, lateral towards a tube trailer truck, and downward), and durations (90 and 180 s) of leakage. The results indicated that higher leakage mass flow rates produce a larger flammable cloud volume (FCV), resulting in higher maximum overpressures than that caused by lower flow rates. Downward leakage generally resulted in a larger FCV and higher overpressure than lateral leakage. The explosion characteristics were also influenced by geometry of LH2 facility, including the presence of structures in the leakage path. Contrastingly, leakage duration had a minimal effect on the maximum overpressure because an increased duration causes a greater dilution of hydrogen, only slightly expanding the FCV. According to the overpressure–impulse diagram, higher leakage flow rates cause severe health risks, approaching thresholds for lung rupture and 100% fatality. Contrary to the minor damages caused by lower leakage flow rates. High flow rates, particularly with downward leaks, can cause significant structural damage in brick buildings, potentially leading to partial demolition.

FinFET-Based Feedback Control Assisted Near-Threshold SRAM Cell

This paper presents a single-ended 12-transistor SRAM cell capable of operating at near-threshold voltage in FinFET technology. This cell employs Schmitt trigger-based inverters and feedback cut write assist technique to improve performance properties. The simulations have been done through HSPICE using 10 nm FinFET technology at a supply voltage of 0.45 V and a temperature of 25°C under 5000 Monte Carlo tests. The proposed cell improves the read static noise margin by at least 1.01 times. The write static noise margin is also increased by at least 1.07. The proposed single-ended cell leads to a reduction of α BL by 50% and offers low dynamic write power. The leakage power is also reduced by 1.03 times due to the use of single bitline in the cell structure, stack transistors in the write path and elimination of leakage in the read path.

Border Gateway Protocol Route Leak Detection Technique Based on Graph Features and Machine Learning

In the Internet, ASs are interconnected using BGP. However, due to a lack of security considerations in the design of BGP, a series of security issues arise during the propagation of routing information, such as prefix hijacking, route leakage, and AS path tampering. Therefore, this paper conducts research on the detection of route leakage. By analyzing BGP routing information, we abstract the routing propagation relationship between ASs into a network topology graph, and extract graph features from the graph abstracted from routing data at certain time intervals. Based on the structural robustness features and centrality measurement features of the graph, we determine whether a route leakage has occurred during the current time period. To this end, we use machine learning methods and propose a weighted voting model. This model trains multiple single models and assigns weights to them, and through the weighted analysis of the results of multiple models, it can determine whether a route leakage has occurred. In addition, to determine the corresponding weights, we use genetic algorithms for identifying route leaks. The experimental results show that the method used in this paper has a high accuracy rate, and compared with a single model, it performs better on multiple datasets.

Modelling study of divertor W leakage for different divertor conditions with Ne seeding in EAST tokamak

Abstract Sequential SOLPS-ITER and DIVIMP simulations are carried out for tungsten (W) edge transport during neon (Ne) injection in EAST, elucidating the pathway of W impurity leakage from the divertor to the core plasma under different dissipative divertor conditions. Divertor conditions from low-recycling to detachment are generated by modulating the Ne injection rate in the SOLPS simulation. With the drift velocities incorporated in DIVIMP, W transport under the drift effect is investigated. For low-density L-mode plasma conditions with favorable Bt direction, the majority of W source originates from the outer divertor target and leaks upstream through the near-SOL EB drift reversed region at both inner and outer divertors. The EB drift is demonstrated to have a significant effect on W leakage and the effect diminishes with the increase of Ne injection rate. Compared to the D2 injection cases, Ne injection helps to achieve a strong dissipative divertor condition at a much lower plasma density, resulting in a higher W leakage ability due to the smaller friction with the background plasma. For Ne injection cases under high-density H-mode conditions, W leaks mostly through the outer divertor region while the inner divertor is fully detached. Compared to the L-mode cases, the shorter power decay lengths in the scrap-off layer (SOL) of the H-mode cases result in smaller parallel EB drift velocities especially in the middle and far SOL region. With the increase of the Ne injection rate, the decrease of the EB drift in the middle SOL leads to a wider near-separatrix W leakage path. Therefore, a worse divertor W screening is expected, which is consistent with the previous published experimental observations [1].

Study on the electrical performance degradation mechanism of β -Ga2O3 p-n diode under heavy ion radiation

The impact of heavy ion irradiation on the β-Ga2O3 p-n diode and its physical mechanism have been studied in this Letter. After the irradiation fluence of 1 × 108 cm−2, it is observed that the electrical performance of the device is significantly degraded. The forward current density (JF) is reduced by 49.4%, the reverse current density (JR) is increased by more than two orders of magnitude, and the breakdown voltage (VBR) is decreased by 30%. Based on the results of the deep-level transient spectroscopy measurement, it is concluded that acceptor-like traps generated with an energy level of EC-0.75 eV in the β-Ga2O3 drift layer dominate the JF degradation of the device, which are most likely related to Ga vacancies. These acceptor-like traps result in the reduction of change carrier concentration, which in turn leads to a decrease in JF. In addition, according to the conductive atomic force microscope measurements and theoretical calculation, it is clearly observed that the latent tracks induced by heavy ion irradiation can act as leakage paths, leading to a significant degradation of JR and VBR.

Numerical optimisation of microbially induced calcite precipitation (MICP) injection strategies for sealing the aquifer's leakage paths for CO2 geosequestration application

Carbon capture and storage (CCS) in deep geological aquifers has shown to be the most viable option for mitigating the greenhouse gas effect of carbon dioxide (CO2) at a large scale. However, the underground formations often possess discontinuities in the caprocks, leaking the stored CO2. Potential leakage paths, such as abandoned wells, have been growing due to excessively unplugged oil and gas exploration wells. The leakage of CO2 from these wells is a major concern, considering their negative impact on the environment and compromising CO2 storage efficiency. Recently, microbially induced calcite precipitation (MICP) technology has proven to be an effective and sustainable method for reducing the permeability of geomaterials. Nevertheless, the MICP process involves intricate interactions among bio-chemo-hydraulics (BCH) domains to comprehend the reactive transport of biochemicals. The complex nature of the MICP process poses difficulties in setting the biochemical injection durations for a particular target distance at the given injection rate. Given this, the present study developed a coupled numerical model and employed it as a workable tool for optimising MICP injections to plug the abandoned well connecting two deep geological aquifers. Following that, the study evaluated the leakage of CO2 using flow migration rates in the untreated and MICP-treated leaky aquifer. The study proposed a novel optimisation strategy for biochemical injections under near and far-field leakage conditions. The sensitivity of biochemical injection durations on the attached bacterial amount and permeability in the leak was also determined. The observations from the present study indicated a complete reduction in the CO2 migration rates from the abandoned well due to a reduced permeability after MICP, thereby indicating the efficacy of the proposed optimisation methodology. Further, a cost analysis of the MICP treatment indicated a rational application cost with the target distance compared to the detrimental effects of CO2 leakage.

Breaking Ground: A New Area Record for Low-Latency First-Order Masked SHA-3

SHA-3, the latest hash standard from NIST, is utilized by numerous cryptographic algorithms to handle sensitive information. Consequently, SHA-3 has become a prime target for side-channel attacks, with numerous studies demonstrating successful breaches in unprotected implementations. Masking, a countermeasure capable of providing theoretical security, has been explored in various studies to protect SHA-3. However, masking for hardware implementations may significantly increase area costs and introduce additional delays, substantially impacting the speed and area of higher-level algorithms. In particular, current low-latency first-order masked SHA-3 hardware implementations require more than four times the area of unprotected implementations. To date, the specific structure of SHA-3 has not been thoroughly analyzed for exploitation in the context of masking design, leading to difficulties in minimizing the associated area costs using existing methods. We bridge this gap by conducting detailed leakage path and data dependency analyses on two-share masked SHA-3 implementations. Based on these analyses, we propose a compact and low-latency first-order SHA-3 masked hardware implementation, requiring only three times the area of unprotected implementations and almost no fresh random number demand. We also present a complete theoretical security proof for the proposed implementation in the glitch+register-transition-robust probing model. Additionally, we conduct leakage detection experiments using PROLEAD, TVLA and VerMI to complement the theoretical evidence. Compared to state-of-theart designs, our implementation achieves a 28% reduction in area consumption. Our design can be integrated into first-order implementations of higher-level cryptographic algorithms, contributing to a reduction in overall area costs.

Fully coupled hydromechanical study of tunnel excavation considering leachate leakage from a high water-level landfill

The Jigongshan Mountain Tunnel was constructed beneath a high water-level landfill in Shenzhen, China. Previous studies could not fully capture the hydraulic interactions between the tunnel excavation and the landfill leachate seepage. In this study, a fully coupled hydromechanical numerical model, considering the unsaturated properties and the changing permeability of the waste and geological materials, was established to simulate the landfill leakage and the tunnel excavation simultaneously. Parameter analysis was conducted to explore the effects of the configuration and dimensions of the leakage pathway and leakage points on the seepage field. Results indicate the landfill leakage has a minimal effect on tunnel displacement. The leakage width and the leakage path in the clay significantly affect the pore pressure of the tunnel. In scenarios of severe leakage, the pore pressure of the tunnel can reach as high as 0.615 MPa. Three defensive lines and the fully cover waterproofing layer were suggested for the tunnel waterproofing system under the Xiaping landfill. This research contributes valuable insights for the design and construction of subsurface structures in proximity to landfills.

Modeling and Analysis of Shutdown Dynamics in Flying Capacitor Multilevel Converters

This work explores the dynamic behavior of the flying capacitor multilevel (FCML) converter during unplanned shutdown. A model for a general N-level FCML converter is developed, which captures capacitor non-linearities, component leakage paths, and body diode behavior. This work highlights how switch voltage ratings may be exceeded during unplanned shutdown, and proposes several mitigation strategies. Using a ten-level FCML converter hardware prototype, the time-domain behavior of the model is verified, and a successful hardware mitigation strategy is demonstrated which ensures safe and rapid converter shutdown.

Earmuff performance in the presence of high-level impulse from a recoilless weapon firing in a confined space.

A noise attenuation performance test was conducted on earmuffs using a recoilless weapon launch platform in a confined space, along with two acoustic test fixtures (ATFs). The overpressure at the ATF's effective tympanic membrane comprised direct sound at 185 dB sound pressure level (SPL) and reflected sound at 179 dB SPL. Wearing earmuffs reduced these peaks to 162 dB SPL and 169 dB SPL, respectively. The reflected sound from walls was defined as delayed sound. An analytical model for earmuff noise attenuation simulated their effectiveness. The simulation revealed that when the earmuffs attenuated delayed sound, the acoustic impedance of acoustic leakage and the acoustic impedance of the earmuff material decreased by 96% and 50%, respectively. The negative overpressure zone between direct and delayed sound decreased the earmuffs' fit against the ATF. Additionally, the enclosed volume between the earmuff and the ear canal decreased by 12%. After the installation of bandages on the earmuffs, the overpressure peak of delayed sound was reduced by 5 dB. Furthermore, the acoustic impedance of the earmuff's sound leakage path and the acoustic impedance of the earmuff material deformation path increased by 100% and 809%, respectively.

Leakage current control of Y-HfO2 for dynamic random access memory applications via ZrO2 stacking

Pristine HfO2 tends to have a monoclinic phase with a low dielectric constant. Reportedly, yttrium(Y) doping has been used to induce the tetragonal phase in HfO2, with Y contributing to the formation of the tetragonal phase and improving the crystallinity. However, Y doping in HfO2 forms oxygen vacancies, resulting in a relatively high leakage current. Owing to the difficulty in suppressing the oxygen vacancies crucial for inducing the tetragonal phase, we focused on another significant leakage current path: the grain boundary. Introducing a heterostructure is expected to reduce the grain size and mitigate the leakage current by increasing the length of the leakage path. This study compares the dielectric constant and leakage current based on the stacking sequence of ZrO2 and Y-doped HfO2 (Y-HfO2) and elucidate the underlying differences through electrical analysis. Additionally, crystallographic analysis reveals the reasons for the structural order-dependent variations in the electrical properties. Finally, the structure with a Y-HfO2 layer at the bottom demonstrates advantages in achieving a lower leakage current.

Lumped Parameter Thermal Network Modeling and Thermal Optimization Design of an Aerial Camera.

The quality of aerial remote sensing imaging is heavily impacted by the thermal distortions in optical cameras caused by temperature fluctuations. This paper introduces a lumped parameter thermal network (LPTN) model for the optical system of aerial cameras, aiming to serve as a guideline for their thermal design. By optimizing the thermal resistances associated with convection and radiation while considering the camera's unique internal architecture, this model endeavors to improve the accuracy of temperature predictions. Additionally, the proposed LPTN framework enables the establishment of a heat leakage network, which offers a detailed examination of heat leakage paths and rates. This analysis offers valuable insights into the thermal performance of the camera, thereby guiding the refinement of heating zones and the development of effective active control strategies. Operating at a total power consumption of 26 W, the thermal system adheres to the low-power limit. Experimental data from thermal tests indicate that the temperatures within the optical system are maintained consistently between 19 °C and 22 °C throughout the flight, with temperature gradients remaining below 3 °C, satisfying the temperature requirements. The proposed LPTN model exhibits swiftness and efficacy in determining thermal characteristics, significantly facilitating the thermal design process and ensuring optimal power allocation for aerial cameras.

CFD Characterization and Field Test Study on Plugging Air Leakage with Time-Varying Viscosity Solidified Foam to Prevent Coal Spontaneous Combustion

ABSTRACT From the perspective of plugging air leakage paths and preventing coal spontaneous combustion in the goaf of coal mines, filling and plugging the ends of the working face is crucial. Generally speaking, rapidly solidified foam slurry is beneficial to plugging air leakage paths. However, researchers have not yet clarified the accumulation and diffusion rules of rapidly solidified foam, resulting in low efficiency in plugging air leakage paths. To solve the above problems, this study takes the goaf of 1301 working faces of the Shandong Lilou Coal Industry as the research object, uses the computational fluid dynamics modeling method to construct a physical model of pressure injection foam slurry, and optimizes the on-site application process parameters of plugging the end of the working face. The numerical simulation results show that coagulant can improve the accumulation characteristics and plugging efficiency of foam slurry, and the optimal addition amount is 3 wt%. In addition, as the perfusion flow increases from 5 to 15 m3/h, the airflow rates on the working face gradually increases and the oxidation zone gradually shrinks. Therefore, the grouting flow is preferably 15 m3/h. Field test results show that rapid-setting inorganic solidified foam blocks the airflow at the air inlet corner from leaking into the goaf and weakens the composite reaction of coal and oxygen. The temperature at each monitoring point first decreased, then stabilized, and the final temperature was maintained at 27-28°C. The CO concentration gradually decreased and finally remained below 20 ppm. The CO concentration of the mine’s total return airflow is stable below 10 ppm. This study can provide theoretical guidance for the technological design of using solidified foam to rapidly plug the air leakage paths at the end of the fully mechanized caving working face.

Small polaron hopping and tunneling transport in Maxwell–Wagner relaxation dominated Al2O3/TiO2 subnanometric laminates

Maxwell–Wagner relaxation dominated Al2O3/TiO2 nanolaminates (ATA NLs) have recently demonstrated their potential for high-density energy storage applications. In this report, we have unraveled the defect-mediated transport mechanisms prevailing in Al2O3/TiO2 sub-nanometric laminates. Temperature-dependent ac conductivity measurements revealed the signature of small polaron hopping in TiO2 active layers and trap-assisted tunneling transport through Al2O3 barrier layers, which was corroborated by resonant photoelectron spectroscopy and temperature-dependent current–voltage measurement. The polaronic defect states, found ∼1 eV below the Fermi level, served as the hopping centers and leakage paths for current. The signature of quantum tunneling transport and the negative differential conductance observed toward higher electric field was attributed to the splitting of delocalized minibands. These transport properties of Al2O3/TiO2 nanolaminates will help in tailoring these materials for next-generation storage capacitors.

The impact of spatial layout on safety risks of urban natural gas pipelines

This paper primarily investigates the influence of spatial layout on the safety risks associated with urban natural gas pipelines. Drawing from the actual spatial configuration around the pipeline and local climatic characteristics, the study delves into the distribution patterns of natural gas leakage diffusion and explosion accident consequences, considering various factors such as leakage apertures, soil porosity, and spatial layouts. By integrating the outcomes of the consequence analysis, the quantitative risk of urban natural gas pipelines, accounting for the impact of spatial layout, was computed and juxtaposed with the results of traditional two-dimensional risk analysis. The findings underscore that spatial layout exerts a substantial impact on risk distribution, with significantly elevated risk values in more congested spatial layouts. Additionally, the introduction of a barrier along the pipeline leakage path resulted in a 91.4% reduction in risk compared to scenarios without obstruction. It is evident that the spatial layout surrounding the pipeline plays a pivotal role in influencing the distribution of pipeline failure risks, establishing the spatial environment as a critical factor in risk analysis. This study offers valuable insights for urban land planning, safety control line establishment, and related considerations.

Etching-free pixel definition in InGaN green micro-LEDs

The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage, significantly deteriorating device performance. In this study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation. Thermal annealing in ambient air oxidized and reshaped the LED structure, such as p-layers and InGaN/GaN multiple quantum wells. Simultaneously, the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected. It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide, significantly reducing LED leakage current. Furthermore, applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively. Utilizing the STO method, InGaN green micro-LED arrays with 50-, 30-, and 10-µm pixel sizes were manufactured and characterized. The results indicated that after 4 h of air annealing and with a 3.5-μm SiO2 protective layer, the 10-µm pixel array exhibited leakage currents density 1.2 × 10−6 A/cm2 at −10 V voltage and a peak on-wafer external quantum efficiency of ~6.48%. This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency. Micro-LEDs fabricated through the STO method can be applied to micro-displays, visible light communication, and optical interconnect-based memories. Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs. Moreover, the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices, such as photodetectors, laser diodes, high-electron-mobility transistors, and Schottky barrier diodes.