The passivating contact concept stands out as one of the most promising and industrially viable photovoltaic (PV) technologies. Further improving the quality of physical contact has become a focus of ongoing research. The film blistering issue has been identified as one of the major bottlenecks for the polysilicon (poly-Si) films deposited by the PECVD approach. In this study, we investigated how the in-situ phosphorus (P) doping level within the poly-Si films contributes to the occurrence of blistering. Our investigations into the film blistering mechanisms reveal that a high in-situ P-doping suppresses hydrogen release levels and reduces the accumulation of residual stress during annealing, which leads to the blistering-free appearance, especially observed in heavily P-doped poly-Si films. However, as excessive P-doping could weaken the interfacial passivation quality, we propose a bi-layer structure of P-doped poly-Si films which allows the doping profile to be tailored and maintain good quality passivating contacts. Based on the bi-layer structure, we fabricated industrial-sized tunnel oxide passivated contact (TOPCon) solar cells, which attained an average efficiency of 23.84%. Our work not only presents a promising strategy for improving the performance of passivating contacts via the PECVD approach but also underscores the significant potential for its widespread implementation in industrial TOPCon solar cell manufacturing.