Abstract

Crystalline silicon (c‐Si) solar cells have dominated the photovoltaic market due to their superior mechanical and thermal robustness, nonhazardous nature, optimal energy bandgap, and the availability of established manufacturing techniques. However, conventional c‐Si solar cells fabricated through thermal doping processes present challenges such as high recombination rates and increased production costs. Recently, dopant‐free solar cells have emerged as a promising next‐generation approach; they offer numerous advantages, such as reduced recombination, cost‐effectiveness, environmental friendliness, and applicability to nano‐ and submicrometer structures. This review evaluates the strengths and weaknesses of dopant‐free passivating contact materials for emitters, tracing the development of dopant‐free solar cells from the earliest reports to the current state‐of‐the‐art. A systematic evaluation of these materials based on their electrical and optical properties, coating conformality, stability, and overall photovoltaic performance is presented. Moreover, the limitations of dopant‐free solar cells are identified and strategies to further enhance their efficiency are proposed.

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