Theoretical analysis of backside polycrystalline silicon layer in the TOPCon solar cells

Abstract

As an upgraded version of passivated emitter and rear cell (PERC) solar cells, the performance of tunnel oxide passivating contacts (TOPCon) solar cells is very dependent on the silicon oxide layer and poly-Si layer. We found that different crystallization rates or doping of germanium, carbon and other elements in poly-Si can change the band gap of poly-Si, which has an impact on the efficiency (Eff) of TOPCon solar cells. Therefore, the appropriate band gap is particularly important. At the same time, the internal defect of poly-Si also have great influence on the performance of solar cells. The simulated band diagram, charge carrier concentration and recombination rate were used to deeply explore the defect in poly-Si and the influence of poly-Si with different band gap on the performance of TOPCon solar cells.