P-type Si Research Articles

Si-waveguide-based optical power monitoring of a 2 × 2 Mach-Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter.

Transparent in-line optical power monitoring in Si programmable photonic integrated circuits (PICs) is indispensable for calibrating integrated optical devices such as optical switches and resonators. A Si waveguide (WG) photodetector (PD) based on defect-mediated photodetection is a promising candidate for a transparent in-line optical power monitor, owing to its simplicity and ease of integration with a fully complementary metal-oxide-semiconductor (CMOS)-compatible process. Here, we propose a simple optical power monitoring scheme for a 2 × 2 Mach-Zehnder interferometer (MZI) optical switch based on InGaAsP/Si hybrid MOS optical phase shifters. In the proposed scheme, a low-doped p-type Si WG PD with a response time of microseconds is utilized as a transparent in-line optical power monitor, and the ground terminal of the MOS optical phase shifter is shared with that of the Si WG PD to enable the simple monitoring of the output optical power of the MZI. Based on this scheme, we experimentally demonstrate that the output optical power of a 2 × 2 MZI can be simply monitored by applying a bias voltage to the Si slabs formed at the output WGs of the MZI without excess optical insertion loss.

Self-powered γ-In2Se3/p-Si heterojunction for photodetection: exploring humidity and light intensity dependent photoresponse

In this study, high-quality γ-In2Se3 thin films were successfully deposited on p-Si substrates via the RF sputtering technique. Structural characterization using XRD and Raman spectroscopy confirmed the formation of the hexagonal γ-phase of In2Se3 film. FESEM analysis revealed the presence of small, homogeneous, and well-defined grains in the prepared γ-In2Se3 film. EDS analysis confirmed the stoichiometric composition (∼ 2:3) of the In2Se3 films. XPS further validated the presence of In, Se, and Si elements in the deposited films. Band gap analysis using UV-visible spectroscopy yielded a value of 1.96 eV for the γ-In2Se3 film. Integration of γ-In2Se3 with p-type Si enhanced photoresponsivity of 47.9 mA/W, photosensitivity of 282, and photo detectivity of 8.45 × 1010 Jones. The self-powered γ-In2Se3/p-Si heterojunction-based photodetector exhibited rapid rise time attributed to the type II band alignment structure, facilitating efficient electron-hole pair separation and minimizing recombination. Furthermore, humidity and light intensity-dependent photodetector properties of γ-In2Se3/p-Si heterojunction photodetector were also investigated. An increase in photocurrent from 271 to 291 µA was observed with rising humidity levels, indicating the device’s sensitivity to humidity variations. Furthermore, light intensity dependence studies revealed a linear relationship between photocurrent and incident light intensity, demonstrating the device’s reliable response across various illumination levels.

Optimizing optoelectronics performance: theoretical and experimental study on ZnO thin film for Al/ZnO/p-Si photodiode

Abstract In this paper, a ZnO photodiode in a p-n heterojunction configuration is fabricated on a p-type Si substrate focusing specifically on ZnO/p-Si heterojunction photosensitive devices and photodiodes (PDs) using Al contacts. Through an experimental and theoretical analysis approach aims to evaluate the effects of important parameters, including ZnO layer thickness, defect density, and contact materials, on PD’s efficiency. Numerical analysis simulations comparatively examine the experimentally fabricated device performance at a 5 nm ZnO layer thickness by balancing photon absorption and carrier formation while minimizing carrier transport limitations. Experimentally process, an Atomic Layer Deposition (ALD) system was used to grow ZnO interlayers on one side of the polished Si wafer. Then, Al metallic contacts were created on the ZnO layers using a hole array mask. The PDs were then subjected to electrical characterization using I-V and I-t measurements under various illumination densities. Al/ZnO/p-Si PD’s device with active performance has been produced and analyzed with electrical parameters such as barrier height, photocurrent, spectral response, ideality factor and EQE were derived, analyzed and studied. In conclusion, this work provides a comprehensive understanding of the performance of Al/ZnO/p-Si PD at varying illumination intensities and offering a detailed analysis of key parameters influencing device efficiency for future optoelectronics applications.

Enhancing Hot Carrier Photoelectric Efficiency through the Boosted Collection of Hot Holes via Au/ZrO2/Si Tunneling Junctions.

Metallic nanoparticles can generate photoexcited hot carriers on the femtosecond scale under light excitation, which holds immense significance for applications such as optical communication and ultrafast imaging. In this study, a tunnelling junction structure with ZrO2 as the dielectric layer is designed and fabricated to achieve efficient hot hole collection between Au nanoparticles and P-type Si. Through characterizations of photoconductive atomic force microscopy, the electrical transition from an ohmic contact to a tunneling junction is confirmed, and the transfer pathway of Au hot holes to P-type Si upon 520 nm excitation is clearly observed. The impact of the tunneling structure on device performance is investigated through the fabrication of Si/ZrO2/Au/TiO2 photodiodes. The performance tests show that hot hole collection by the tunneling effect significantly enhances a range of parameters, e.g., external quantum efficiency by 250%. Noticeably, the external quantum efficiency attributed to photogenerated hot carriers under 520 nm excitation is estimated to exceed 2.5%. Moreover, the transient photoresponse of the photodiodes is examined with a typical rising time of less than 20 ns.

Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature

Even though n-type Si wafers show a lower extent of light-induced degradation, similar degradation and regeneration behavior as in p-type Si materials has been observed for various n-type Si monocrystalline materials. In this work, the long-term behavior of minority charge carrier lifetime in non-diffused n-type FZ-Si and Cz-Si wafers during illumination at elevated temperatures is investigated. Thereby, various influencing factors such as peak firing temperature and treatment temperature are considered. Degradation and a very strong regeneration effect, which exceeds the initial effective lifetime value, can be observed in the samples. Since surface-related saturation current density remains almost constant during degradation and regeneration, the effect seems to be bulk related. The extent of degradation and regeneration could be shown to be firing temperature-dependent. It could also be shown for n-type FZ-Si wafers that higher firing temperatures result in an increased H2 content within the silicon bulk. Investigations of the injection-dependent defect density revealed that the defect formed during degradation is not a deep level Shockley-Read-Hall defect. Observations at different treatment temperatures and constant illumination of 0.9(1) sun photon flux equivalent have shown that a higher treatment temperature leads to faster degradation and regeneration kinetics. Similarly, higher injection rates also speed up regeneration kinetics. Since degradation also occurs in darkness, the bulk related degradation effect in n-type FZ-Si is charge carrier-induced and not necessarily light-induced.

Studies on the Morphological and Mechanical Properties of TiZrHfNiCuCo Metallic Coatings Deposited by DC Magnetron Sputtering

This research aimed to investigate the effects of input power and gas flow rate on the composition, microstructure, and mechanical properties of TiZrHfNiCuCo metallic coatings. These metallic coatings were deposited on a p-type Si wafer using a direct current magnetron sputtering system with varying input powers (100–300 W) and Ar flow rates (5–20 sccm). It was observed that increasing input power and decreasing Ar flow rate led to TiZrHfNiCuCo metallic coatings with higher hardness and smoother surfaces. The experiment resulted in the formation of a metallic amorphous coating. This study describes the mechanism by which the mechanical properties of the TiZrHfNiCuCo coating change according to sputtering parameters. Based on these results, the effects of sputter variables, such as input power and gas flow rate properties, on the properties of coatings are discussed.

Atom layer deposited TiO2 electron transport layer for silicon heterojunction solar cells to achieve high performance

Silicon/compound heterojunction (SCH) solar cells based on p-type and n-type c-Si wafers using atom layer deposition-TiO2 and low work function metal as the electron transport layer and rear electrode are fabricated. Efficiencies of 20.6 % and 21.6 % are achieved on p-type and n-type silicon solar cells, respectively. High Voc exceeding 700 mV have been realized on both kinds of Si wafers. Special attention has been paid to the SCH solar cells based on p-type c-Si wafers in which the TiO2 electron transport layer serves as the emitter. Carrier transport mechanisms and junction characteristics of the SCH solar cells are analyzed based on dark J-V measurement. The formation of a strong inversion layer at the Si surface region is determined, which implies the high Voc potential of the SCH solar cells based on p-type Si. An optical loss analysis is performed along with a possible solution to further improve the Jsc. The feasibility of TiO2 applied as an efficient electron transport layer (emitter) in p-type SCH solar cells with high performance has been showed.

Heterogeneous monolithic 3D integration for hybrid vertical CMOS inverter using n-type IGTO TFT on p-type Si FET

In this work, a complementary metal oxide semiconductor (CMOS) vertical inverter using heterogeneous monolithic 3D (M3D) integration with p-type Si field-effect transistor (FET) and n-type indium-gallium-tin-oxide (IGTO) thin film transistor (TFT) was implemented and characterized. This CMOS inverter was attained by vertical stacking n-type IGTO TFT on p-type Si FET. Oxide semiconductor materials such as indium-gallium-zinc-oxide (IGZO), indium-tungsten-oxide (IWO), indium oxide (In2O3) and IGTO are being considered as potential options for channel materials in M3D integration technology due to high electrical characteristics and low temperature process. Among them, IGTO was employed as a channel material to achieve high mobility. We fabricated a n-type IGTO TFT using HfO2 and tungsten as a gate dielectric and electrode, respectively. The post-annealing process was conducted at 200–500 °C with 50 °C intervals. The IGTO TFT exhibits a high field-effect mobility (32.9 cm2/Vs), low sub-threshold swing (0.070 V/dec) and stable reliability behaviour (ΔVth < 0.4 V) against various external gate bias temperature stress tests in a low temperature (<500 °C). The stable heterogeneous vertical inverter performance such as voltage-transfer curve (VM = 1.66 V), voltage gain (30.1 V at VDD = 3 V), and noise margin (NMH = 1.22 V, NML = 1.34 V) were well behaved. This M3D integration-based hybrid CMOS inverter can be an alternative knob toward various device applications.

The n-MoO3/p-Si heterojunction photodiode: Influence of the MoO3 film thickness on the ultraviolet and infrared photodetector performance

Here, we studied the effect of the MoO3 thin film thickness on the ultraviolet (UV) and infrared (IR) photodiode properties of the n-MoO3/p-Si heterojunction structure. Initially, the metal molybdenum (Mo) thin films with different thicknesses (50,150, and 250 nm) were created via DC magnetron sputtering on a p-type Si substrate. Then, the MoO3 thin films were synthesized using a thermal oxidation method with an optimal oxygen flow rate of 60sccm. XRD and Raman analysis showed that the structure of prepared thin films has converted from an amorphous to an orthorhombic (α-MoO3) crystalline phase with increasing thickness. The optical transmittance of the layers was tuned by controlling the thickness, and the maximum transmittance for the 50 nm-thick film was achieved in the broad wavelength range of 300–1100 nm. The current density–voltage (J–V) characteristics indicate the prepared samples' rectifying behavior under dark conditions. The heterojunction photodiode with a 50 nm-thick MoO3 layer shows the best performance. This sample had a maximum amount of transmittance in the UV–visible and IR regions, compared to other samples, which leads to efficient electron-hole separation and transportation. This sample demonstrates a significant photoresponse ratio (ILight/IDark) of about 55 and 52.5 in the ultraviolet (UV) and infrared (IR) regions, respectively.

Silicon-based perovskite plasmonic diode with highly polarized emission

Abstract Here, we propose and develop a silicon (Si)-based perovskite plasmon-emitting diode (PED) with controlled linear polarization in this study. Such polarization originates from the efficient excitation of surface plasmons by excitons in the active layer of the device and the efficient outcoupling by a wedged boundary of a metal electrode. Furthermore, a p-type Si substrate serves as an anode of the diode, and a hole blocking layer of SiO2 is introduced in the PEDOT:PSS/Si heterojunction for carrier injection balance. Pure green emission light has been achieved from devices with varied thicknesses of the emitting layer, and the maximum degree of polarization is measured to be 0.79. The field distribution and polarization of the PED were simulated and measured. Such a low-cost Si-based plasmonic diode provides a promising way to realize simpler and more compact multiple-functional light sources, which are extensively demanded for optoelectronic integration.

Development and Characterization of N2O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells.

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compared to PERC, the utilization of n-type wafers with an n-type contact at the back and a p-type diffused boron emitter has become the industry standard in 2024. In this work, variations of this technology are explored, considering p-type passivating contacts on p-type Si wafers formed via a rapid thermal processing (RTP) step. These contacts could be useful in conjunction with n-type contacts for realizing solar cells with passivating contacts on both sides. Here, a particular focus is set on investigating the influence of the applied thermal treatment on the interfacial silicon oxide (SiOx) layer. Thin SiOx layers formed via ultraviolet (UV)-O3 exposure are compared with layers obtained through a plasma treatment with nitrous oxide (N2O). This process is performed in the same plasma enhanced chemical vapor deposition (PECVD) chamber used to grow the Si-based passivating layer, resulting in a streamlined process flow. For both oxide types, the influence of the RTP thermal budget on passivation quality and contact resistivity is investigated. Whereas the UV-O3 oxide shows a pronounced degradation when using high thermal budget annealing (T > 860 °C), the N2O-plasma oxide exhibits instead an excellent passivation quality under these conditions. Simultaneously, the contact resistivity achieved with the N2O-plasma oxide layer is comparable to that yielded by UV-O3-grown oxides. To unravel the mechanisms behind the improved performance obtained with the N2O-plasma oxide at high thermal budget, characterization by high-resolution (scanning) transmission electron microscopy (HR-(S)TEM), X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) is conducted on layer stacks featuring both N2O and UV-O3 oxides after RTP. A breakup of the UV-O3 oxide at high thermal budget is observed, whereas the N2O oxide is found to maintain its structural integrity along the interface. Furthermore, chemical analysis reveals that the N2O oxide is richer in oxygen and contains a higher amount of nitrogen compared to the UV-O3 oxide. These distinguishing characteristics can be directly linked to the enhanced stability exhibited by the N2O oxide under higher annealing temperatures and extended dwell times.

Effect of substrates on the structural, surface chemical state, and optical properties of Ga-doped Al2O3 thin films

We report the stabilization of Ga-doped Al2O3 (GaAlO) thin films into rhombohedral structure (R 3‾ c space group). We used the target material of composition A11.5Ga0.5O3 (bulk) to deposit the films on Alumina (0001) and p-type Si (100) substrates by using the electron beam evaporation technique. X-ray diffraction pattern confirmed the formation of polycrystalline rhombohedral structure for the as-grown films on Alumina substrate, whereas the films grown on Si substrate showed amorphous structure. The post-heat treatment of as-grown films at 550 °C stabilized rhombohedral structure in all the films, irrespective of the substrates. X-ray photoelectron spectra confirmed modification in surface chemical state of the films depending on nature of the substrates. Optical bandgap of the GaAlO films was stabilized in the range of 3.44 eV–4.04 eV, which is substantially reduced in comparison to corundum structured α-Al2O3 having optical band gap in the range of 8–9 eV and α-Ga2O3 having optical band gap of 4.5–5.5 eV. The defect-induced electronic states and substrate induced interfacial diffusion contributed additional energy gap in the range of 1.50–2.92 eV for GaAlO films grown on Si substrate. The development of highly crystalline corundum structured α-(Al, Ga)2O3 alloyed thin films and engineering their band gap energy in a wide range (1.5–4 eV) is useful for applications of semiconductor metal oxides in high power and medium frequency opto-electronic devices.

Junction Piezotronic Transistor Arrays Based on Patterned ZnO Nanowires for High-Resolution Tactile and Photo Mapping.

Recently, a great deal of interest has been focused on developing sensors that can measure both pressure and light. However, traditional sensors are difficult to integrate into silicon (Si)-based integrated circuits. Therefore, it is particularly important to design a sensor that operates on a new principle. In this paper, junction piezotronic transistor (JPT) arrays based on zinc oxide (ZnO) nanowire are demonstrated. And the JPT arrays show high spatial resolution pressure and light mapping with 195 dpi. Because ZnO nanowires are arranged vertically above the p-type Si channel's center of the transistor, the width of the heterojunction depletion region is constricted by the positive piezoelectric potential generated by strained ZnO. In addition, photogenerated charge carriers can be created in the Si channel when JPT is stimulated by light, which increases its electrical conductivity. Consequently, the external pressure and light distribution information can be obtained from the variation in the output current of the device. The prepared JPT arrays can be compatible with Si transistors, which make them highly competitive and make it possible to incorporate both pressure and light sensors into large integrated circuits. This work will contribute to many applications, such as intelligent clothing, human-computer interaction, and electronic skin.

Covalent Functionalization of Silicon with Plasma-Grown "Fuzzy" Graphene: Robust Aqueous Photoelectrodes for CO2 Reduction by Molecular Catalysts.

Carbon electrodes are ideal for electrochemistry with molecular catalysts, exhibiting facile charge transfer and good stability. Yet for solar-driven catalysis with semiconductor light absorbers, stable semiconductor/carbon interfaces can be difficult to achieve, and carbon's high optical extinction means it can only be used in ultrathin layers. Here, we demonstrate a plasma-enhanced chemical vapor deposition process that achieves well-controlled deposition of out-of-plane "fuzzy" graphene (FG) on thermally oxidized Si substrates. The resulting Si|FG interfaces possess a silicon oxycarbide (SiOC) interfacial layer, implying covalent bonding between Si and the FG film that is consistent with the mechanical robustness observed from the films. The FG layer is uniform and tunable in thickness and optical transparency by deposition time. Using p-type Si|FG substrates, noncovalent immobilization of cobalt phthalocyanine (CoPc) molecular catalysts was employed for the photoelectrochemical reduction of CO2 in aqueous solution. The Si|FG|CoPc photocathodes exhibited good catalytic activity, yielding a current density of ∼1 mA/cm2, Faradaic efficiency for CO of ∼70% (balance H2), and stable photocurrent for at least 30 h at -1.5 V vs Ag/AgCl under 1-sun illumination. The results suggest that plasma-deposited FG is a robust carbon electrode for molecular catalysts and suitable for further development of aqueous-stable Si photocathodes for CO2 reduction.

Tuning the Topo-Morphological properties of ITO Films using Al-Ag interlayer for Low-Resistance Optoelectronics Devices

Indium tin oxide (ITO) is recently attracting intense attention for application as transparent conducting electrode in different optoelectronic devices including solar cells, liquid crystal displays and organic light emitting diodes. This is attributed to their high optical transmittance in the visible region and good electrical conductivity. In this work, surface topological-morphological (topo-morphological) and electrical properties of ITO based multilayer films with aluminum-silver (Al-Ag) metal interlayer (ITO/Al-Ag/ITO) are investigated after post annealing treatment at 300-500oC by atomic force microscopic (AFM), field emission scanning electron microscopy (FESEM), four-point probe and hall-effect techniques respectively. The ITO/Al-Ag/ITO films are deposited by direct current and radio frequency magnetron sputtering techniques on p-type Si at room temperature. The results showed a smooth surface topology by as-deposited film with films smoothness improving after post annealing treatment as analyzed by AFM method. Sharp crystallites peaks were obtained by all the films with smaller peaks diffusing and recombining to form larger films with increasing post-annealing temperature. The films root means square roughness increased as the temperature increases with film annealed at 500oC showing a superior and enhanced microstructure. Compared to as-deposited film, careful observation shows that surface morphology smoothness increased with increase in temperature with films annealed at 400oC and 500oC showing highest increasing surface smoothness pattern as determined by FESEM technique. Similarly, higher grain sizes are observed especially by films annealed at 400oC and 500oC due to the heat absorption which causes the particles to expand thereby narrowing the grain boundaries and subsequently improve the surface smoothness. These FESEM findings are consistent with AFM measurements confirming the high surface property and enhanced grain size with increasing post annealing temperature. The films exhibit decreased electrical resistivity and sheet resistance while carrier concentration and Hall mobility increased with increasing post annealing treatment indicating highest corresponding values of...

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

In this study, the effects of nickel (Ni) and boron (B) elements on the structural, optical, electrical, optoelectronic, and thermoelectric properties of zinc oxide (ZnO) material were investigated. Therefore, undoped ZnO, 3% Ni-doped ZnO (Zn0.97Ni0.03O), and 3% Ni-1% B co-doped ZnO (Zn0.96Ni0.03B0.01O) solutions were prepared by the sol gel method. The produced solutions were coated on glass and p-type Si substrates via dip coating and spraying methods in the form of thin films. We produce pure and n-type semiconductors in the form of nanodots which have wurtzite ZnO polycrystalline structure for all samples. Ni and B co-doped sample is morphologically, electrically and optically enhanced the ZnO material with 3.08 eV band gap, homogenous surface and the highest electrical conductivity. In addition, the best material among the three samples that can be used as a visible light-sensitive sensor is Zn0.96Ni0.03B0.01O under feedback voltage. Technologically, this material can be turned into a photodiode device in the form of Au/Zn0.96Ni0.03B0.01O/p-Si. While the obtained ideality factor of ZnO from the forward bias region decreases from 5.7 to 3.4, its barrier height increases from 0.636 eV to 0.667 eV and serial resistance of contact decreases from 121.6 × 103 Ω to 5.6 × 103 Ω with Ni and B co-doping. Ni doping thin film improves the photovoltaic, and thermoelectric properties of ZnO. Ni-doped ZnO sample can be studied in form of the thin films as a thermoelectric material due to its ZT value is nearly 1.73 × 10–4 at 650 K. Its thermoelectric performance is 13 times better than the that of pure ZnO for the same temperature values. The efficiency of Ni-doped ZnO sample as solar cell increases 10 times compared to pure ZnO. In addition to the production of materials with improved energy efficiency, economical products suitable for use in large areas have been obtained in this study.

Electrical Properties of Laser Patterned Schottky Diode with ALD-Grown TiO2 Interlayer.

Heterojunction formation is the key to adjusting the electronic and optoelectronic properties of various semiconductor devices. There have been various reports on the formation and importance of semiconducting heterojunction devices based on metal oxides. Titanium dioxide (TiO2) is one of the metal oxides that has many unique properties. TiO2's importance is due to its physical and chemical properties such as large band gap, large permittivity, stability, and low leakage current density. In this context, we present the electrical properties of the metal-insulator-semiconductor (MIS) type-TiO2-based Schottky barrier diode (SBD) in the study. To create a thin layer of TiO2 on p-type silicon (p-type Si) patterned partially by the laser-induced periodic surface structure (LIPSS) technique, an atomic layer deposition (ALD) technique was used in the study. For comparison, the current-voltage (I-V) characteristics of the TiO2-based laser-patterned (LP) and nonlaser-patterned (non-LP) diodes were measured at 300 K and in the dark at ±5 V. Classical thermionic emission (TE) theory and Cheung functions were used to investigate the critical diode parameters of the diodes, including ideality factor (n), series resistance (Rs), and barrier height (Φb). The n values were obtained as 4.10 and 3.68 from the TE method and Cheung functions for the LP diode, respectively. The Φb values were found as 0.68 and 0.69 eV from the TE method and Cheung functions, respectively. According to experimental results, the laser patterning resulted in an increase in the Φb values and a decrease in the n values. After laser patterning, it was observed that the device worked effectively, and the ideality factor and barrier height values were improved. This study provides insight into the fabrication and electrical properties of TiO2-based heterojunction devices.

Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance.

In monocrystalline Si (c-Si) solar cells, identification and mitigation of bulk defects are crucial to achieving a high photoconversion efficiency. To spectroscopically detect defects in the c-Si bulk, it is desirable to passivate the surface defects. Passivation of the c-Si surface with dielectrics such as Al2O3 and SiNx requires deposition at elevated temperatures, which can influence defects in the bulk. Herein, we report on the passivation of different Czochralski (Cz) Si wafer surfaces by an organic copolymer, Nafion. We test the efficacy of the surface passivation at temperatures ranging from 6 to 473 K to detect bulk defects using electron paramagnetic resonance (EPR) spectroscopy. By comparing with state-of-the-art passivation layers, including Al2O3 and liquid HF/HCl, we found that at room temperature, Nafion can provide comparable passivation of n-type Cz Si with an implied open-circuit voltage (iVoc) of 713 mV and a recombination current prefactor J0 of 5 fA/cm2. For p-type Cz Si, we obtained an iVoc of 682 mV with a J0 of 22.4 fA/cm2. Scanning electron microscopy and photoluminescence reveal that Nafion can also be used to passivate the surface of c-Si solar cell fragments scribed from a solar cell module by using a laser. Consistent with previous studies, analysis of the EPR spectroscopy data confirms that the H-terminated surface is necessary, and fixed negative charge in Nafion is responsible for the field-effect passivation. While the surface passivation quality was maintained for almost 24 h, which is sufficient for spectroscopic measurements, the passivation degraded over longer durations, which can be attributed to surface SiOx growth. These results show that Nafion is a promising room-temperature surface passivation technique to study bulk defects in c-Si.

Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

The spectroscopic and electronic properties of small-molecular organic semiconductors in thin films are a significant aspect that controls the performance of their optical/optoelectronic devices. A heterojunction of thermal vacuum deposited film of tin(II)2,3-naphthalocyanine (SnNc) dye onto a p-type Si wafer (SnNc/p-Si) was fabricated. The morphology of SnNc thin film onto Si wafer was explored using the Field Emission Scanning Electron Microscope (FE-SEM). The specular reflectance and the fluorescent properties of SnNc thin film onto Si wafer were investigated. The PL emission spectra of SnNc/p-Si emission bands are related to the B and Q absorption bands for SnNc. The spectral behavior of the refractive index and the specific polarizability for both SnNc/Glass and SnNc/p-Si were extracted. Under varying temperatures (298–378 K), the electronic properties of the SnNc/p-Si heterojunction were analyzed in dark conditions. The diode parameters of SnNc/p-Si heterojunctions, which exhibited temperature-dependent behavior, were extracted from the current–voltage (I-V) procedure. According to the Cheung-Cheung and Norde procedure, the essential electrical diode parameters of the SnNc/p-Si device, such as the ideality factor, the series resistance, and barrier height, were estimated. The photoconductivity parameters, such as the photocurrent, the sensitivity, and the responsivity of the SnNc/p-Si devices, were estimated. These findings can be helpful and utilized in optoelectronic and organic electronic applications.

Photoelectrochemical Proton-Coupled Electron Transfer of TiO2 Thin Films on Silicon.

TiO2 thin films are often used as protective layers on semiconductors for applications in photovoltaics, molecule-semiconductor hybrid photoelectrodes, and more. Experiments reported here show that TiO2 thin films on silicon are electrochemically and photoelectrochemically reduced in buffered acetonitrile at potentials relevant to photoelectrocatalysis of CO2 reduction, N2 reduction, and H2 evolution. On both n-type Si and irradiated p-type Si, TiO2 reduction is proton-coupled with a 1e-:1H+ stoichiometry, as demonstrated by the Nernstian dependence of the Ti4+/3+ E1/2 on the buffer pKa. Experiments were conducted with and without illumination, and a photovoltage of ∼0.6 V was observed across 20 orders of magnitude in proton activity. The 4 nm films are almost stoichiometrically reduced under mild conditions. The reduced films catalytically transfer protons and electrons to hydrogen atom acceptors, based on cyclic voltammogram, bulk electrolysis, and other mechanistic evidence. TiO2/Si thus has the potential to photoelectrochemically generate high-energy H atom carriers. Characterization of the TiO2 films after reduction reveals restructuring with the formation of islands, rendering TiO2 films as a potentially poor choice as protecting films or catalyst supports under reducing and protic conditions. Overall, this work demonstrates that atomic layer deposition TiO2 films on silicon photoelectrodes undergo both chemical and morphological changes upon application of potentials only modestly negative of RHE in these media. While the results should serve as a cautionary tale for researchers aiming to immobilize molecular monolayers on "protective" metal oxides, the robust proton-coupled electron transfer reactivity of the films introduces opportunities for the photoelectrochemical generation of reactive charge-carrying mediators.