Spectroscopic and electronic investigations on tin(II) 2,3-naphthalocyanine/p-Si heterojunction for optoelectronic applications

Abstract

The spectroscopic and electronic properties of small-molecular organic semiconductors in thin films are a significant aspect that controls the performance of their optical/optoelectronic devices. A heterojunction of thermal vacuum deposited film of tin(II)2,3-naphthalocyanine (SnNc) dye onto a p-type Si wafer (SnNc/p-Si) was fabricated. The morphology of SnNc thin film onto Si wafer was explored using the Field Emission Scanning Electron Microscope (FE-SEM). The specular reflectance and the fluorescent properties of SnNc thin film onto Si wafer were investigated. The PL emission spectra of SnNc/p-Si emission bands are related to the B and Q absorption bands for SnNc. The spectral behavior of the refractive index and the specific polarizability for both SnNc/Glass and SnNc/p-Si were extracted. Under varying temperatures (298–378 K), the electronic properties of the SnNc/p-Si heterojunction were analyzed in dark conditions. The diode parameters of SnNc/p-Si heterojunctions, which exhibited temperature-dependent behavior, were extracted from the current–voltage (I-V) procedure. According to the Cheung-Cheung and Norde procedure, the essential electrical diode parameters of the SnNc/p-Si device, such as the ideality factor, the series resistance, and barrier height, were estimated. The photoconductivity parameters, such as the photocurrent, the sensitivity, and the responsivity of the SnNc/p-Si devices, were estimated. These findings can be helpful and utilized in optoelectronic and organic electronic applications.