Oriented PZT Thin Films Research Articles

Preparation of the oriented PZT thin films by nebulized spray pyrolysis

PZT thin films were deposited on Si, Pt/Si and MgO/Si substrates by nebulized spray pyroly-sis (NSP). MgO thin films with (200) orientation also were deposited on Si substrates by nebulized spray pyrolysis. For the samples deposited on Si substrates, the results of RBS analyses indicated that ratio of each element in final thin films was close to the started solution. We prepared the (100) oriented PZT thin films on Pt/Si substrates. We obtained also the PZT thin films with (100) preferred orientation on MgO(200)/Si.

Sol-gel processing of piezoelectric thin films

Lead zirconate titanate, Pb(ZrxTi1−x)O3 [PZT] rhombohedral thin films with [001] orientation were fabricated by sol-gel spin coating techniques. Using a methoxyethanol based precursor solution and rapid thermal annealing at 700[ddot]C for 30 seconds, crack free and homogeneous PZT thin films were successfully obtained. Preferred [001] oriented PZT thin films with x = 0.80 showed a remanent polarization of 28 μC/cm2 and a coercive field of 17 kV/cm.

Microstructure and properties of highly oriented PZT thin films on epitaxial ceramic electrodes prepared by CSD

Epitaxial thin films of Lag0.7Sr0.3MnO3 and Lag0.5Sr0.5CoO3 were deposited by chemical solution deposition on single-crystal LaAlO3. These single-crystal layers served as bottom electrodes for the growth of ferroelectric PZT thin films. By XRD analysis, influences of processing on crystallographic properties were found. The thin film properties were influenced by the thickness of the crystallizing amorphous layer and also by the heating rate. Hysteresis measurements were performed on selected samples, showing a dependence of the remanent polarization on the crystallographic properties.

Influence of PbTiO3 buffer layer on structural and electrical properties of Pb(Zr, Ti)O3 films produced by sputter deposition technique

Ferroelectric lead zirconate titanate (PZT) with very thin lead titanate (PT) buffer layer inserted between the PZT films and the Si/SiO 2 /Ti/Pt substrate have been deposited by r.f. magnetron sputtering. Insertion of a PT buffer layer was found to exert marked effects on the PZT films in terms of structure, microstructure and electrical properties. The orientation of PZT thin films was controlled by changing the orientation of the PT layer. The (111) - oriented and (100) - oriented PZT films were grown on the (111) oriented and the (001) and (100) mixed - oriented PT buffer layers, respectively. The influence of the buffer layer thickness and the orientation of the PZT films on the electrical properties was also investigated.

Characterization of microstructural and piezoelectric properties of oriented PZT thin films obtained by pulsed laser deposition

The growing of oriented crystalline PZT films on silicon substrates at low substrate temperatures is reported By varying the laser fluency and other deposition parameters we have been able to produce by a single step process highly oriented PZT films with good piezoelectric properties at much lower temperatures than reported in other PLD experiments Film microstructural and compositional characterization as well as piezoelectric measurements are presented and discussed.

Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1−xTix)O3 thin films

A novel processing method is developed for preparing sol-gel derived Pb(Zr1−xTix)O3 (x=0.47) thin films on Pt/Ti/SiO2/Si substrates. Using a modified precursor solution and a rapid heat treatment without pyrolysis, it was possible to obtain highly (111) oriented PZT thin films with high perovskite content at a low annealing temperature of 550 °C. The low temperature processing was assisted by taking advantage of the heterogeneous nucleation of the PZT films, which reduces the activation energy for perovskite phase formation. Using this method, the PZT thin films exhibited better dielectric and ferroelectric properties at 550 °C than those reported by other methods. For example, the PZT films annealed at 550 °C showed a well-saturated hysteresis loop at an applied voltage of 5 V with Pr and Ec of 12 μC/cm2 and 38 kV/cm, and their dielectric constant and dissipation factor at a frequency of 100 kHz were 410 and 0.021, respectively. The leakage current density was lower than 10−8 at an applied electric field of 150 kV/cm.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Texture evolution and electrical properties of oriented PZT thin films

The Pb-rich intermetallic phases, Pt5–7Pb and PbO, play an important role in the texture evolution of oriented PZT thin films. Pt5–7Pb is a (111) textured transient intermetallic phase that nucleates PZT [111]texture. PbO is a (001) textured layer compound that nucleates PZT [100] texture. Zr-rich PZT films with a [111]texture have better electrical properties than [100]textured films because of the polarization effect.

Solid phase epitaxial growth of sol-gel derived Pb(Zr,Ti)O3 thin films on SrTiO3 and MgO

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were crystallized on SrTiO3 (100) and MgO (100) substrates by a sol-gel process using nonhydrolyzed metal methoxyethoxide precursors, spin coating, and rapid thermal annealing. Solid phase epitaxial growth of PZT on SrTiO3 was observed directly from the amorphous phase even at 425 °C. The PZT had a single (001) orientation and rocking curve full width at half maximum (FWHM) less than 0.1°. High-temperature annealing of MgO substrates improved orientation of PZT thin films. Epitaxial crystallization of PZT with a single (001) orientation on the annealed MgO was observed at temperature above 550 °C after the formation of the pyrochlore phase.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.