Organometallic Vapor Phase Epitaxial Growth Research Articles

OMVPE growth of InP using TMIn

The organometallic vapor phase epitaxial (OMVPE) growth of InP is described for a simple, atmospheric-pressure system using trimethylindium (TMIn) as the In source. The growth process exhibits no signs of polymer predeposition problems which have plagued several previous efforts to grow In containing compounds and alloys. The effects of growth temperature, in the range 525 to 700°C, on growth rate, morphology, photoluminescence intensity and spectral half-width, and electron mobility are reported.

The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony

The organometallic vapor phase epitaxial (OMVPE) growth of GaSb and GaAsl−xSbx (0 ≤ × ≤ 0.26, 0 .64 ≤ × ≤1) is discussed. Trimethylgallium and trimethylantimony are used as the Ga and Sb source, respectively. Most GaAs1× Sbx growths are done using arsine, but the use of an alternate arsenic source, trimethylarsenic, is also discussed. In contrast to most arsenic-containing alloys, both GaSb and Sb-rich GaAs1−x Sbx are grown under Group III-rich conditions. The total input flux as well as the ratio of the input chemicals must be closely regulated. In particular, growth of GaAsl−xSbx requires careful control of the trimethylantimony-to-total Group V ratio, since arsenic preferentially incorporates into the crystal.

Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth

The effects of baffles upon the incorporation of oxygen into organometallic vapor phase epitaxial AlxGa1−x As have been investigated. Both graphite and SiC baffles have been studied. A simple model can be used to describe this effect as being dependent on the adsorption of trimethylaluminum onto the graphite, followed by reaction with oxygen to remove, or getter it from the gas stream.

The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxy

The organometallic vapor phase epitaxial (OM-VPE) growth of AlxGa1-xPyAs1-y on graded GaPyAs1-yGaAs in the compositional range 0 < x < 0.9 and 0 < y < 0.6 is reported. It is found that composition control can be easily achieved, and that the vapor phase ratio of trimethylaluminum to trimethylgallium strongly influences the incorporation of P in the solid. A model is developed which explains this in terms of competing reaction rates. The model gives a good fit to the experimental data.

Organometallic VPE Growth of InAs1-x-ySbxPy on InAs

InAs1-x-ySbxPy quaternary alloy lattice matched to InAs was successfully grown by organometallic vapor phase epitaxial growth. In a fairly wide composition range (0≦x+y≦0.7) the grown quaternary layer exhibited a mirror-smooth surface and a sharp X-ray diffraction spectrum. Full widths of half-maximum of X-ray rocking curve were 20–30''. The growth rate is limited by the mass transport of indium. The miscibility gap extent was found in the low arsenic composition region (x+y>0.7). The band gap energy of the quaternary layer lattice matched to InAs was obtained from photoresponse measurements. The bowing parameter for the band gap energy of the InSbxP1-x mixed crystal system is estimated to be 1.6±0.3 eV.

The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic

The organometallic vapor phase epitaxial growth of Ga1−xInxAs and GaAs1−ySby using trimethylarsenic and trimethylantimony as the Group V sources is reported and the relevant chemistry is discussed. Growth rate and composition variations as a function of temperature are given for GaAs1−ySby. A result of particular importance is that no detrimental room temperature gas phase reaction is observed between triethylindium and trimethylarsenic. Consequently, the growths are performed at one atmosphere pressure without the need for any complicated injection schemes in the reactor design.