Abstract
InAs1-x-ySbxPy quaternary alloy lattice matched to InAs was successfully grown by organometallic vapor phase epitaxial growth. In a fairly wide composition range (0≦x+y≦0.7) the grown quaternary layer exhibited a mirror-smooth surface and a sharp X-ray diffraction spectrum. Full widths of half-maximum of X-ray rocking curve were 20–30''. The growth rate is limited by the mass transport of indium. The miscibility gap extent was found in the low arsenic composition region (x+y>0.7). The band gap energy of the quaternary layer lattice matched to InAs was obtained from photoresponse measurements. The bowing parameter for the band gap energy of the InSbxP1-x mixed crystal system is estimated to be 1.6±0.3 eV.
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