Abstract
The organometallic vapor phase epitaxial (OM-VPE) growth of AlxGa1-xPyAs1-y on graded GaPyAs1-yGaAs in the compositional range 0 < x < 0.9 and 0 < y < 0.6 is reported. It is found that composition control can be easily achieved, and that the vapor phase ratio of trimethylaluminum to trimethylgallium strongly influences the incorporation of P in the solid. A model is developed which explains this in terms of competing reaction rates. The model gives a good fit to the experimental data.
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