The greatest strength of photogating effect is that the current level can be adjusted by light. Research on photogating effect is still actively underway, and various factors play a role in causing photo-reaction. In general, they work in such a way that photo-generated carriers generated under certain conditions are trapped, leading to threshold voltage shifts. Here we focus on the surface environment in which photocarriers are trapped/de-trapped. To analyze the difference in photo-response depending on the insulating layer of the phototransistor, we produced a DNTT TFTs with a SiO2 dielectric and a DNTT TFTs with a TiO2/SiO2 dielectric. Except for the insulating layer, the channel and source/drain electrodes use dinaphtho [2,3-b:2′,3′- f]thieno [3,23,2-b]thiophene (DNTT) and Au. 500 nm and 600 nm irradiation allowed a gradual current rise while DNTT TFTs with a TiO2/SiO2 dielectric allowed fast de-trapping. Additionally, facial recognition synapse simulation using 500 nm and 600 nm light using a DNTT TFTs with a TiO2/SiO2 dielectric achieved recognition rates of over 90%.
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