Manipulating the hysteresis via dielectric in organic field-effect transistors toward synaptic applications

Abstract

Abstract The cause of hysteresis in organic field-effect transistors (OFETs) and its application in organic synaptic transistors are studied. Benefiting from the slow polarization process of dipoles in organosilicone (Dow Corning 1–2577) dielectric, the devices exhibit the desirable synaptic behaviors, including excitatory postsynaptic current (EPSC), memory function, potentiation/depression characteristics, endurance characteristics and spike-amplitude-dependent plasticity. Further, combining the DC 1–2577 dielectric with the polydimethylsiloxane (PDMS) support, a flexible conformable DC 1–2577 dielectric organic synapse transistor is fabricated, which provides a great potential for the wearable and implantable artificial neuromorphic systems for artificial intelligence and new-generation computers.