Organic Field-effect Transistors Devices Research Articles

Effect of Branching position of alkyl side chain on charge-transport characteristics of diketopyrrolopyrrole- and dichlorodithienylethene-based organic field-effect transistors

Herein, two donor-acceptor (D-A) conjugated copolymers, 2DPP-ClTVT and 7DPP-ClTVT, were designed and synthesized using 2,5-bis(2-decyltetradecyl)-3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4( 2H,5H )-dione (2DPP) and 2,5-bis(7-decylnonadecyl)-3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4( 2H,5H )-dione (7DPP) as acceptors for use in organic field-effect transistors (OFETs). Both copolymers exhibited ambipolar transport characteristics owing to the introduction of (E) -1,2-bis(3-chlorothiophen-2-yl)ethene (ClTVT) as a relatively weak donor unit. However, the different branching positions of the alkyl side chains caused significant changes in the morphology and charge carrier mobilities between 2DPP-ClTVT and 7DPP-ClTVT in OFET devices. In our cases, 2DPP-ClTVT with a branching position closer to the backbone produced a smoother film surface and a denser lamellar structure, which account for its better ambipolar transport characteristics. • Two new D-A conjugated semiconducting copolymers,2DPP-ClTVT and 7DPP-ClTVT, were developed. • The different branching positions of the alkyl side chains caused changes in the film morphology and charge carrier mobilities. • The branching point closer to the polymer backbone showed better ambipolar transport characteristics in OFET.

Synthesis of π-extended oxacenes and their application to organic field-effect transistors

A variety of heteroacenes have been developed in the last decades as promising organic semiconducting materials for organic field effect transistors (OFETs). However, furan-fused ones have been rarely seen in literatures until very recently. Here we demonstrate the synthesis of dibenzo[d,d']naphtho[2,3-b:6,7-b']difurans (DBNDFs) and their application as the active layers for OFETs. Unsubstituted and didecyl-substituted DBNDFs were successfully synthesized. Thermal and photophysical properties were examined by thermogravimetric analysis, differential scanning calorimetry, and UV/Vis absorption and photoluminescence spectroscopies as well as theoretical calculations. The out-of-plane X-ray diffraction measurement and atomic force microscopy of their thin films revealed that the DBNDF π-core are arranged with their long axes perpendicular to the substrate. The OFET devices were fabricated with DBNDFs as the active layers, exhibiting typical p-type transport characteristics. In particular, the hole mobility of the OFET devices based on the didecyl-substituted DBNDF reached as high as 0.62 cm2⋅V−1⋅s−1.

Recent progress in organic field‐effect transistor‐based chem/bio‐sensors

AbstractRecent decades have witnessed the huge successes of organic field‐effect transistors (OFETs) and their applications. Among them, OFET‐based sensors have shown promising applications in the field of food safety, industrial security, environmental, and health monitoring. This is due to their advantages in solution processability, flexibility, light weight, and variety in molecular design. This review highlights recent progress in OFET‐based chemical and biological sensors in gas and liquid phase, especially for the past 5 years. The analytes range from small molecules to large biomolecules. The optimizations of OFET devices for sensors, including the semiconducting layers, dielectric layers, electrodes, and their interfaces etc., are illustrated. And their relationships with sensing parameters (sensitivity, selectivity, and response time) as well as the sensing mechanisms are given. Finally, the remaining challenges are discussed. We expect that this review can offer inspiration for future design of OFET‐based sensors.

Fabrication and characterization of P3HT --- based OFETs with TPU --- polymeric gate dielectric prepared by electrospinning method with different thicknesses

Current work reports the manufacturing and electrical characteristics of organic field-effect transistors in the top-contact bottom-gate configurations utilizing solution - processed poly (3-hexylthiophene) films as an active semiconducting layer and thermoplastic polyurethane as gate insulator. A spin coating chemical polymerization technology and an electrospinning tool for polymeric mats production were used to prepare uniform organic thin films with controlled thickness from their solutions. Commercially available flat glass slides were used as the starting substrate. To form the gate electrode a thin layer of metal such as gold (Au) or silver (Ag) was deposited on the glass surface substrates by thermal evaporation through a shadow mask. Thermoplastic polyurethane insulating films with different thicknesses were electrospun from precursor solution on the substrates with Au or Ag electrodes. Patterned Au and/or Ag drain and source electrodes were deposited directly on the surface of as - fabricated poly(3-hexylthiophene) organic semiconductor layer. We used two kinds of metals that have different work functions and their combinations to investigate the influence of the source, drain and gate electrode materials on the output characteristics of fabricated organic thin film transistors. All fabricated of organic field-effect transistor devices showed typical p-type channel characteristics. Additionally, the effects of thermoplastic polyurethane gate dielectric thickness as well as the influence of processing parameters on electrical performances of organic field-effect transistors fabricated were also investigated. Results show that all developed transistors exhibit good and stable performance up to a relatively high drain voltage of ~50 V and the drain-source current up to ~0.5 μA. Keywords: organic field-effect transistors, P3HT organic semiconductor, TPU gate dielectric, electrical characteristics.

Near-IR Absorbing Molecular Semiconductors Incorporating Cyanated Benzothiadiazole Acceptors for High-Performance Semitransparent n-Type Organic Field-Effect Transistors

Small band gap molecular semiconductors are of interest for the development of transparent electronics. Here we report two near-infrared (NIR), n-type small molecule semiconductors, based upon an acceptor–donor–acceptor (A-D-A) approach. We show that the inclusion of molecular spacers between the strong-electron-accepting end group, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile, and the donor core affords semiconductors with very low band gaps down to 1 eV. Both materials were synthesized by a one-pot, 6-fold nucleophilic displacement of a fluorinated precursor by cyanide. Significant differences in solid-state ordering and charge carrier mobility are observed depending on the nature of the spacer, with a thiophene spacer resulting in solution processed organic field-effect transistors (OFETs) exhibiting excellent electron mobility up to 1.1 cm2 V–1 s–1. The use of silver nanowires as the gate electrode enables the fabrication of a semitransparent OFET device with an average visible transmission of 71% in the optical spectrum.

Asymmetric Hybrid Siloxane Side Chains for Enhanced Mobility and Mechanical Properties of Diketopyrrolopyrrole-Based Polymers.

High performance organic field effect transistor devices based on intrinsically scalable materials are of great significance in wearable electronics. In this work, an exclusive approach is reported to rationale the carrier mobility and stretchability of the conjugate polymers (CPs) by modifying the symmetry of the side chains species. Semiconductor CPs with symmetrical alkyl side chains (P(C-C)), symmetrical siloxane side chains (P(Si-Si)), and asymmetrical silicon-carbon side chains (P(C-Si)) are synthesized to investigate the influence of these side chains on the carrier mobility and mechanical behavior. The result shows that silicon-carbon asymmetric side chains can modulate the aggregation degree of polymer chains with a coherence length of 134 Å and maintain the mobility at 0.90 cm2 V-1 s-1 . P(C-Si) exhibits superior tensile properties that even elongation up to 100% the value of mobility retains a majority properties. The main reason is that the lowest coherence length of P(C-Si) polymer leads to an increased proportion of amorphous zones in its polymer film, which efficiently dissipates mechanical stresses. This study provides an efficient strategy for the design and synthesis of the CPs with high carrier transport properties-mechanical stability.

Unipolar electron transport polymer semiconductor based on fluorine- and nitrogen-substituted units for field-effect transistors

The unipolar electron transport conjugated polymers play an important role in organic semiconductors. In this work, a unipolar electron transport polymer semiconductor was designed and synthesized based on fluorination on the donor unit and replacement of nitrogen on the acceptor unit. The optical properties, electrochemistry properties, and film morphology were systematically characterized and investigated. Heteroatom with large electronegativity could effectively lower the molecular orbital energy levels of conjugated polymer. Organic field-effect transistors (OFETs) devices were fabricated to investigate the charge transport properties. Unipolar electron transport characteristics were obtained with the highest field-effect mobility of over 0.03 cm2V[Formula: see text]s[Formula: see text].

Optimizing the Crystallization Behavior and Film Morphology of Donor–Acceptor Conjugated Semiconducting Polymers by Side-Chain–Solvent Interaction in Nonpolar Solvents

The solution state of a conjugated polymer plays a critical role in the film morphology and charge carrier mobility of the solution process organic field-effect transistors (OFETs). However, it remains challenging to establish the relationship between solution-state and solid-state morphologies. Herein, we report an effective strategy to control the film formation process and film morphology by regulating the solution state, specifically, through the interaction between the branched side chain of poly[4-(4,4-bis(2-octyldodecyl)-4H-cyclopenta[1,2-b:5,4-b′]dithiophen-2-yl)-alt-[1,2,5]-thiadiazolo[3,4-c]pyridine] (PCDTPT-ODD) and the nonpolar solvent. A precise adjustment of the solution state using the Hansen solubility parameter distance (Ra) has been achieved. Compared to the polar solvent, ordered aggregates were formed in the solution formed by nonpolar solvents. Interestingly, a highly ordered chain arrangement was observed in solutions with suitable Ra’s (8.2 and 9.4 MPa1/2 for hexane and isooctane, respectively). Importantly, solution-state aggregation was maintained in the drop-casting film due to the memory effect; the as-prepared films were composed of different fiber sizes and crystal regions. The fiber consisted of a face-on region, with the polymer chains in the fiber aligned perpendicular to the long axis of the fibers. The crystallization process of the edge-on region was independent of the face-on region. The face-on and edge-on regions were produced through the aggregated and disordered parts, respectively. As the Ra increased, the fiber size and the face-on region content increased. Finally, the OFET device mobility was optimized with a significant increase in μ (from 9.7 × 10–5 to 1.3 × 10–3 cm2 V–1 s–1). These results showed that the precise regulations of the solution state by the side-chain–solvent interaction play an important role in the film formation process, film morphology, crystallization behavior, and device properties.

Incorporation of 2D black phosphorus (2D-bP) in P3HT/PMMA mixtures for novel materials with tuned spectroscopic, morphological and electric features

Novel materials based on mixtures of immiscible polymers, namely poly (3-hexylthiophene-2,5-diyl) and poly (methyl methacrylate) (P3HT/PMMA), with dispersed phosphorene (2D-bP), obtained by liquid-phase exfoliation (LPE) of black phosphorus (bP) or by in situ polymerization technologies, were prepared for the first time. The new materials were characterized by Raman, UV–Vis, solid state 31P NMR spectroscopies, X-ray diffractometry (XRD), size exclusion chromatography (SEC), morphological (SEM), topographical (AFM) and thermal analysis (DSC and TGA) to investigate the physio-chemical features of both components, polymers and phosphorene owing the composites preparation. Good distribution of the nanoflakes, which preserve their structure and resulted intercalated and partially exfoliated, was achieved thanks to established interactions at the interface between the 2D-bP flakes and the polymers, especially with the P3HT phase, changing the morphology and topography of the mixtures. The preferential allocation of 2D-bP in P3HT, besides inducing a particular polymers phase segregation (a vertical phase separation with P3HT continuous phase onto the surface) encouraged testing these materials as an active layer in Organic Field Effect Transistor (OFET) devices. The data collected showed that the introduction of 2D-bP in P3HT/PMMA polymer mixtures is somewhat promising, giving an increase in mobility up to an order of magnitude with respect to the corresponding 2D-bP-free mixture.

Toward Efficient Charge Transport of Polymer-Based Organic Field-Effect Transistors: Molecular Design, Processing, and Functional Utilization

ConspectusPolymer-based organic field-effect transistors (OFETs) have attracted great attention owing to their significantly improved performance and the recently emerged prospects for broad applications. The charge carrier mobility of polymer-based OFETs has been improved from 10–5 to more than 10 cm2 V–1 s–1 over the past three decades. With the carrier mobility close to or higher than that of amorphous silicon, the application fields of polymer-based OFETs have been extended from sensing to logic or drive circuits. During OFET operation, the charge carriers are successively injected in and then transferred across the semiconducting channel under an external electric field. The behavior of the charge carriers is determined by both charge injection and charge transport. Well-matched frontier molecular orbital (FMO) energy levels and optimized hierarchical structures of semiconducting polymers are essential for the realization of high-performance polymer-based OFETs.In this Account, we mainly demonstrate our recent progress in molecular design strategies and fabrication processing methods for high-performance semiconducting polymers. Moreover, we provide some examples of integrated applications of polymer-based OFETs. The convenient FMO energy level modulation and excellent molecular designability of donor–acceptor (D–A) conjugated polymers facilitate studies on their performance enhancement in OFETs. Proper molecular design of the D–A polymer backbone and side chain can significantly contribute to charge injection enhancement, transport pathway establishment, and trap reduction, thereby resulting in efficient charge transport. Moreover, special fabrication processes of OFET devices can further enhance the charge transport by optimizing the hierarchical structures of semiconducting polymers, thereby enhancing their carrier mobility and stability. By employing high-performance semiconducting polymers as the semiconducting channel of OFETs, various applications can be implemented. These applications range from small-scale logic signal processing and periodic signal generation to complex visual perception systems, indicating broad application prospects in human life. The works on performance improvement and functional utilization of the semiconducting polymers in OFETs might provide insights for molecular design strategies and applications for future plastic electronics.

Quinoidal Small Molecule Containing Ring-Extended Termini for Organic Field-Effect Transistors.

In this work, we synthesized and characterized two quinoidal small molecules based on benzothiophene modified and original isatin terminal units, benzothiophene quinoidal thiophene (BzTQuT) and quinoidal thiophene (QuT), respectively, to investigate the effect of introducing a fused ring into the termini of quinoidal molecules. Extending the terminal unit of the quinoidal molecule affected the extension of π-electron delocalization and decreased the bond length alternation, which led to the downshifting of the collective Raman band and dramatically lowering the band gap. Organic field-effect transistor (OFET) devices in neat BzTQuT films showed p-type transport behavior with low hole mobility, which was ascribed to the unsuitable film morphology for charge transport. By blending with an amorphous insulating polymer, polystyrene, and poly(2-vinylnaphthalene), an OFET based on a BzTQuT film annealed at 150 °C exhibited improved mobility up to 0.09 cm2 V–1 s–1. This work successfully demonstrated that the extension of terminal groups into the quinoidal structure should be an effective strategy for constructing narrow band gap and high charge transporting organic semiconductors.

Computational Design of an Integrated CMOS Readout Circuit for Sensing With Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) are at the forefront of next generation electronics. This class of devices is particularly promising due to the possibility of fabrication on mechanically compliant and conformable substrates, and potential manufacturing at large scale through solution deposition techniques. However, their integration in circuits, especially using stretchable materials, is still challenging. In this work, the design and implementation of a novel structure for an integrated CMOS readout circuitry is presented and its fundamentals of operation are provided. Critical for sensing applications, the readout circuitry described is highly linear. Moreover, as several sources of mismatch and error are present in CMOS and OFET devices, a calibration technique is used to cancel out all the mismatches, thus delivering a reliable output. The readout circuit is verified in TSMC 0.18 μm CMOS technology. The maximum total power consumption in the proposed readout circuit is less than 571 μW, while fully loaded calibration circuit consumes a power less than 153 μW, making it suitable for sensors applications. Based on previously reported high mobility and stretchable semiconducting polymers, this new design and readout circuitry is an important step toward a broader utilization of OFETs and the design of stretchable sensors.

ESD Breakdown of Parylene OFETs With Varying Contact Overlap Capacitance

We examine the electrostatic discharge (ESD) behavior of bottom-gate bottom-contact pentacene organic field-effect transistor (OFET) devices with a parylene-C gate dielectric. A comparison between devices with gate and contact overlap geometries of −2 to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3~\mu \text{m}$ </tex-math></inline-formula> are analyzed. In particular, the relationship between contact overlap, the protective effect of the increased overlap, and the electric field in the dielectric and their effect on ESD resilience is detailed. We find a markedly increased tolerance for negative contact overlaps and a small decrease in tolerance for more positive overlaps. We also report on a highly resilient effect where OFET devices continue to operate but with a reduction in performance after multiple dielectric breakdown. A negative overlap length should be carefully considered when designing OFET devices in a tradeoff between decreased performance and higher ESD resilience.

Controlled Synthesis of Poly[(3-alkylthio)thiophene]s and Their Application to Organic Field-Effect Transistors

Regioregular polythiophenes have been widely used in organic electronic applications due to their solution processability with chemical modification through side chain engineering, as well as their microstructural organization and good hole transport properties. Here, we introduce alkylthio side chains, (poly[(3-alkylthio)thiophene]s; P3ATTs), with strong noncovalent sulfur molecular interactions, to main chain thienyl backbones. These P3ATTs were compared with alkyl-substituted polythiophene (poly(3-alkylthiophene); P3AT) variants such that the effects of straight (hexyl and decyl) and branched (2-ethylhexyl) side chains (with and without S atoms) on their thin-film morphologies and crystalline states could be investigated. P3ATTs with linear alkylthio side chains (P3HTT, hexylthio; P3DTT, decylthio) did not attain the expected higher organic field-effect transistor (OFET) mobilities with respect to P3HT (hexyl) and P3DT (decyl) mainly due to their lower regioregularity (76-78%), although P3ATTs exhibit an enhanced tendency for aggregation and compact molecular packing, as indicated by the red-shifting of the absorption spectra and the shortening of the π-π stacking distance, respectively. Moreover, the loss of regioregularity issue can be solved by introducing more soluble 2-ethylhexylthio branched side chains to form poly[3-(2-ethylhexylthio)thiophene] (P3EHTT), which provides enhanced crystallinity and efficient charge mobility (increased by up to a factor of 3) with respect to the poly(2-ethylhexylthiophene) (P3EHT) without S atoms in the side moieties. This study demonstrates that the presence of side chain alkylthio structural motifs with nonbonded interactions in polythiophene semiconductors has a beneficial impact on the molecular conformation, morphologies, structural packing, and charge transport in OFET devices.

Thermally Stable and High‐Mobility Dithienopyran‐Based Copolymers: How Donor–Acceptor‐ and Donor–Donor‐Type Structures Differ in Thin‐Film Transistors

Although rapid and remarkable progress has been made in semiconducting polymers used in organic field‐effect transistors (OFETs), the development of novel π‐conjugated backbones remains the central issue in this field. High FET mobilities have been achieved for copolymers based on fused‐ring building blocks due to their strong tendency to form ππ stacks. However, introducing the recently formulated strong electron‐rich fused‐ring dithienopyran (DTP) unit in the polymer backbone has garnered considerably less attention. Herein, four new copolymers (donor–acceptor (DA)‐type versus donor–donor (DD)‐type structures) are synthesized based on the DTP unit by adopting different types of counterparts of the backbone. The characteristics of these copolymers, derived from different structural types, are investigated and compared and they are implemented in OFET devices. The DA‐type copolymers (P1 and P2) show higher charge‐carrier mobilities and better thermal stability than the DD‐type copolymers (P3 and P4), attributed to enhanced crystalline features induced by strong intermolecular interactions and preferential 3D‐textured molecular orientation of the DA‐type copolymers. Particularly, P1 exhibits the highest mobility of up to 0.22 cm2 V−1 s−1. This study provides a reference for understanding the influence of the backbone type on the structure–property relation and promotes the development of high‐performance DTP‐based copolymers.

Isomeric Dibenzoheptazethrenes for Air‐Stable Organic Field‐Effect Transistors

AbstractSinglet diradicaloids hold great potential as semiconductors for organic field‐effect transistors (OFETs). However, their relative low material and device stabilities impede the practical applications. Here, to achieve balanced stability and performance, two isomeric dibenzoheptazethrene derivatives with singlet diradical character were synthesized in a concise manner. Benefitting from the aromatic stabilization, both compounds display a small diradical character and large singlet–triplet gap, as corroborated by variable‐temperature electron paramagnetic resonance spectra, single‐crystal analysis, and theoretical calculations. OFET devices based on single crystals showed a high hole mobility of 0.15 cm2 V−1 s−1, which is the highest for zethrene‐based semiconductors. Both isomers exhibited remarkable material stability in air‐saturated solutions as well as excellent bias‐stress and storage stability in device under ambient air.

Isomeric Dibenzoheptazethrenes for Air‐Stable Organic Field‐Effect Transistors

Singlet diradicaloids hold great potential as semiconductors for organic field-effect transistors (OFETs). However, their relative low material and device stabilities impede the practical applications. Here, to achieve balanced stability and performance, two isomeric dibenzoheptazethrene derivatives with singlet diradical character were synthesized in a concise manner. Benefitting from the aromatic stabilization, both compounds display a small diradical character and large singlet-triplet gap, as corroborated by variable-temperature electron paramagnetic resonance spectra, single-crystal analysis, and theoretical calculations. OFET devices based on single crystals showed a high hole mobility of 0.15 cm2 V-1 s-1 , which is the highest for zethrene-based semiconductors. Both isomers exhibited remarkable material stability in air-saturated solutions as well as excellent bias-stress and storage stability in device under ambient air.

Heptacene: Synthesis and Its Hole-Transfer Property in Stable Thin Films.

Heptacene (1) has been produced via a monoketone precursor, 2, which was prepared from 1,2,4,5-tetrabromobenzene in nine steps in a total yield of 10 %. Compound 2 was converted to 1 quantitatively by heating at 202 °C. Heptacene exhibited high thermal stability in the solid state without any observable change over two months. To investigate the potential value of 1 as a material for p-type organic field-effect transistors (OFETs), top-contact OFET devices were fabricated by vacuum deposition of 1 onto a hexamethyldisilazane (HMDS)/SiO2 /Si substrate. The best hole mobility performance was 2.2 cm2 V-1 s-1 . This is the first report of stable heptacene being used in an effective device and examined for its charge carrier properties.

Thermally Stable Colorless Copolyimides with a Low Dielectric Constant and Dissipation Factor and Their Organic Field-Effect Transistor Applications

We developed highly thermally resistant and colorless polyimides (CPIs) with an ultralow coefficient of thermal expansion (CTE) and sufficient mechanical durability as a flexible substrate for organic field-effect transistors (OFETs). The CPIs were synthesized from trans-1,4-cyclohexyl diamine (t-CHDA) with different ratios of 3,3′,4,4′-biphenyltetracarboxylic dianhydride (s-BPDA) and pyromellitic dianhydride (PMDA). The effects of the composition of s-BPDA and PMDA on the thermal, mechanical, electrical, and optical properties of CPIs were investigated. The optimized CPI, PI-3 with 90 mol % s-BPDA and 10 mol % PMDA, showed a relatively high elongation at break (8%) with a low CTE of 14 ppm K–1, a high glass transition temperature (Tg) of 340 °C, and a large tensile modulus (E) of 4.1 GPa, respectively. Besides, PI-3 possessed a high transparency with a light transmittance at 400 nm (T400) of 81% and a low cutoff wavelength (λcutoff) of 349 nm. Next, the dimer diamine of DDA (Priamine 1074) was introduced into the PI-3 structure to reduce the dielectric constant and enhance the stretchability. For example, PI-6C, with 85 mol % t-CHDA and 15 mol % DDA, showed a low dielectric constant (Dk) of 2.8, a low dissipation factor (Df) of 0.004, and a high T400 of 86% with maintained thermal and mechanical properties. Finally, a flexible OFET device using PI-3 as the substrate and dielectric was fabricated and characterized and exhibited an outstanding performance preservation after 1000 bending cycles or the high-temperature heating test, suggesting its excellent durability. The experimental results indicate that the CPIs studied have potential applications for transparent organic electronic devices.

(Invited) Self-Assembling Organic Semiconductors for Chemical Sensing

Self-assembling monolayers of organic semiconductors are promising for monolayer organic field-effect transistors (OFETs) and various devices based on them, in particular low power consumption integrated circuits and ultrasensitive gas sensors [1]. Recently we have developed highly stable organosilicon derivatives of organic semiconductor benzothieno[3,2-b][1]benzothiophene (BTBT) capable to self-assembly into a monolayer semiconducting film by Langmuir–Blodgett, Langmuir–Schaefer (LS) or spin-coating methods [2,3]. These monolayer films were used for preparation of OFET devices, which demonstrated excellent electrical performance with a hole mobility up to 7 × 10−2 cm2 V−1 s−1, a threshold voltage around 0 V and an on–off ratio of 105 as well as long-term stability of half-year storage under ambient conditions. They were successfully utilized for multiparamertic real time detection of NH3 and H2S in dry air [4]. Modified by additional metal-containing porphyrin receptor layer, two-layer OFETs were investigated as ultrasensitive gas sensors for NH3 and H2S real-time detection in the humid air [5]. Introduction of the receptor layers on top of the LS semiconducting monolayer provides the device sensitivity enhancement as well as allows tuning the sensor selectivity. They demonstrated the improvement of both the limit of detection (down to ca. 60−70 ppb) and sensitivity in the air with relative humidity up to 60 %. Impressive combination of the sensor high sensitivity and reproducibility with fast response and full recovery after finishing the analyte exposure enables utilizing the fabricated two-layer OFETs as chemo-sensors in real gas analyzing systems environmental pollutions control. This work was supported by the Russian Science Foundation (grant 19-73-30028).