Abstract
Heptacene (1) has been produced via a monoketone precursor, 2, which was prepared from 1,2,4,5-tetrabromobenzene in nine steps in a total yield of 10 %. Compound 2 was converted to 1 quantitatively by heating at 202 °C. Heptacene exhibited high thermal stability in the solid state without any observable change over two months. To investigate the potential value of 1 as a material for p-type organic field-effect transistors (OFETs), top-contact OFET devices were fabricated by vacuum deposition of 1 onto a hexamethyldisilazane (HMDS)/SiO2 /Si substrate. The best hole mobility performance was 2.2 cm2 V-1 s-1 . This is the first report of stable heptacene being used in an effective device and examined for its charge carrier properties.
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