Studies on the Characteristics and Durability of a Vertical Type Organic Transistor Using Indenofluorenedione Derivatives as an N-Type Active Material

Abstract

We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/ IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/ TriF-IF-dione/DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 6.0 x 10(3).