Optoelectronic Logic Research Articles

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate.

Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

An all-in-one optoelectronic logic device with self-distinguishable dual-band photoresponse

An all-in-one optoelectronic logic device with self-distinguishable dual-band photoresponse

Light induced photovoltaic and pyroelectric effects in ferroelectric BaTiO3 film based Schottky interface for self‐powered and flexible multi‐modal logic gates

AbstractOptoelectronic logic gates have emerged as one of the key candidates for the creation of next generation logic devices. However, current optoelectronic logic gates can provide only one or two logic gates, severely limiting their applications. Here we report a self‐powered and mechanically flexible device based on a BaTiO3 ferroelectric film to produce multi‐modal logic gates. By exploiting the photo‐induced photovoltaic and pyroelectric effects of a Schottky junction which is created between BaTiO3 and LaNiO3, the device is able to provide five different optoelectronic logic gates, which can be operated using input lasers of different wavelength (405 or 785 nm). The mode of operation of the logic gate can be switched by controlling the wavelength and intensity of the input laser, where the switching process is both lossless and reversible. A logic gate array was designed to conduct the five logic operations, with 100% accuracy, thereby providing application potential for the Internet of Things, big data, and secure solutions for data processing and transmission.image

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.

On-chip optoelectronic logic gates operating in the telecom band

On-chip optoelectronic logic gates operating in the telecom band

Controllable Synthesis of 2H-1T' Mox Re(1- x ) S2 Lateral Heterostructures and Their Tunable Optoelectronic Properties.

Constructing heterostructures and doping are valid ways to improve the optoelectronic properties of transition metal dichalcogenides (TMDs) and optimize the performance of TMDs-based photodetectors. Compared with transfer techniques, chemical vapor deposition (CVD) has higher efficiency in preparing heterostructures. As for the one-step CVD growth of heterostructures, cross-contamination between the two materials may occur during the growth process, which may provide the possibility of one-step simultaneous realization of controllable doping and formation of alloy-based heterostructures by finely tuning the growth dynamics. Here, 2H-1T' Mox Re(1- x ) S2 alloy-to-alloy lateral heterostructures are synthesized through this one-step CVD growth method, utilizing the cross-contamination and different growth temperatures of the two alloys. Due to the doping of a small amount of Re atoms in 2H MoS2 , 2H Mox Re(1- x ) S2 has a high response rejection ratio in the solar-blind ultraviolet (SBUV) region and exhibits a positive photoconductive (PPC) effect. While the 1T' Mox Re(1- x ) S2 formed by heavily doping Mo atoms into 1T' ReS2 will produce a negative photoconductivity (NPC) effect under ultraviolet (UV) laser irradiation. The optoelectronic property of 2H-1T' Mox Re(1- x ) S2 -based heterostructures can be modulated by gate voltage. These findings are expected to expand the functionality of traditional optoelectronic devices and have potential applications in optoelectronic logic devices. This article is protected by copyright. All rights reserved.

All-in-One Optoelectronic Logic Gates Enabled by Bipolar Spectral Photoresponse of CdTe/SnSe Heterojunction.

Optoelectronic logic gate devices (OLGDs) have attracted significant attention in high-density information processors; however, multifunctional logic operation in a single device is technically challenging due to the unidirectional electrical transport. In this work, we deliberately design all-in-one OLGDs based on self-powered CdTe/SnSe heterojunction photodetectors. The SnSe nanorod (NR) array is grown on the sputtered CdTe film via a glancing-angle deposition technique to form a heterojunction device. At the interface, the photovoltaic (PV) effect in the CdTe/SnSe heterojunction and the photothermoelectric (PTE) effect from the SnSe NRs are combined together to induce the reversed photocurrent, leading to a unique bipolar spectral response. The competition between PV and PTE in different spectral ranges is thus employed to control the photocurrent polarity, and five basic logic gates of OR, AND, NAND, NOR, and NOT can be performed just with a single heterojunction. Our findings indicate the large potentials of the CdTe/SnSe heterojunctions as logic units in next-generation sensing-computing systems.

Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials.

Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.

CsPbBr3 Perovskite Quantum Dots Embedded in Polystyrene-poly2-vinyl Pyridine Copolymer for Robust and Light-Tunable Memristors

The development of a reliable optoelectronic memristor is crucial for the success of neuromorphic vision systems, but current devices are limited by stochastic resistance switching and uncontrollable ion dynamics. To address these challenges, a core–shell nanosphere composite was synthesized using CsPbBr3 quantum dots and block copolymer polystyrene-poly2-vinyl pyridine. This memristor exhibits both negative differential resistance and resistive switching memory behavior and has demonstrated exceptional stability, withstanding over 5000 cycles and remaining stable for over 5 million seconds. It is also tunable by light irradiation, making it ideal for optoelectronic logic operations and multi-derivative state applications. The memory behavior is attributed to an electrochemical metalization mechanism involving the formation and annihilation of pyridine groups, conductive metal filaments, and bromide ion vacancies in S2VP filaments. This work presents an effective method for fabricating robust multi-derivative perovskite optoelectronic devices for neuromorphic computing systems. Additionally, machine learning algorithms have demonstrated accurate digital image classification and recognition using photoelectric pulse-driven neuromorphic computation with an accuracy of over 97%.

Passive Gate-Tunable Kinetic Photovoltage along Semiconductor-Water Interfaces.

Moving boundaries of electrical double layer at solid-liquid interface enables unprecedented persistent energy conversion and provokes a kinetic photovoltaic effect by moving an illumination region along the semiconductor-water interface. Here, we report a transistor-inspired gate modulation of kinetic photovoltage by applying a bias at the semiconductor-water interface. The kinetic photovoltage of both p-type and n-type silicon samples can be facilely switched on/off, stemming from the electrical-field-modulated surface band bending. In contrast to the function of solid-state transistors relying on external sources, passive gate modulation of the kinetic photovoltage is achieved simply by introducing a counter electrode with materials of desired electrochemical potential. This architecture provides the ability to modulate the kinetic photovoltage over three orders of magnitude and opens up a new way for self-powered optoelectronic logic devices.

Passive Gate‐Tunable Kinetic Photovoltage along Semiconductor‐Water Interfaces

AbstractMoving boundaries of electric double layer at solid–liquid interface enables unprecedented persistent energy conversion and provokes a kinetic photovoltaic effect by moving an illumination region along the semiconductor‐water interface. Here, we report a transistor‐inspired gate modulation of kinetic photovoltage by applying a bias at the semiconductor‐water interface. The kinetic photovoltage of both p‐type and n‐type silicon samples can be facilely switched on/off, stemming from the electrical‐field‐modulated surface band bending. In contrast to the function of solid‐state transistors relying on external sources, passive gate modulation of the kinetic photovoltage is achieved simply by introducing a counter electrode with materials of desired electrochemical potential. This architecture provides the ability to modulate the kinetic photovoltage over three orders of magnitude and opens up a new way for self‐powered optoelectronic logic devices.

Reprogrammable Binary and Ternary Optoelectronic Logic Gates Composed of Nanostructured GaN Photoelectrodes with Bipolar Photoresponse Characteristics

AbstractThe elementary electronic‐logic‐gates, performing basic logic functions using electric signals as input, act as a building block of modern digital circuits. Intriguingly, the optoelectronic‐logic‐gates (OLGs), composed of optical devices, are emerging as a new logic platform which enables faster and large‐capacity data transmission and processing by using photons as input. However, the strict operation principle of classic optical devices, for example, the unidirectional photoresponse of the photodetector, restricts the functional enrichment of OLGs. Herein, reprogrammable OLGs in a photoelectrochemical (PEC)‐environment are reported by employing gallium‐nitride semiconductor p–n nanowires as photoelectrodes where bidirectional photocurrent is achieved, leading to the demonstration of various binary OLGs including “NOT”, “XOR”, and “OR”. Strikingly, thanks to the versatile tunability of PEC‐photoelectrodes, the logic function of these OLGs is switchable by simply adjusting programming inputs including light intensity, bias voltage, electrolyte condition, and the physicochemical properties of the nanowire surface. Most importantly, unique ternary OLGs, for example, ternary “OR” gates, can also be realized based on binary ones by just tuning their applied bias for higher logic complexity applications, without changing the device architecture. Such reprogrammable binary and ternary OLGs could provide a new avenue toward next‐generation logic circuits for fast computing and data‐processing in the future.

Light‐Triggered and Polarity‐Switchable Homojunctions for Optoelectronic Logic Devices

AbstractSemiconductor homojunctions based on 2D materials are promising candidates for optoelectronic logic devices due to their excellent electrostatic tunability and photoelectric characteristic. However, to reach programmable logic functions, the 2D homojunctions usually suffer from compulsory combinations of electrical and optical inputs. Here, a light‐triggered and polarity‐switchable homojunction made from the vertically stacked MoTe2/CuInP2S6/Au layers in a dual‐floating gate transistor configuration, is demonstrated. Utilizing the band alignment between MoTe2 and CuInP2S6, the photocarriers in MoTe2 can be excited to Au layer across the insulating CuInP2S6 efficiently, serving as floating gate to modulate the polarity of the MoTe2 homojunctions which produce photocurrents simultaneously in photovoltaic mode. A logic gate XOR is achieved in one single device without the need for any applied voltage. Moreover, the devices exhibit both anomalous photoresponse and optical memory behaviors in photoconductive mode. The results provide a potential route for the development of optoelectronic logic devices with fully light‐actuated sensing capability.

Reversible charge-polarity control for a photo-triggered anti-ambipolar In2Se3&WSe2 heterotransistor.

Based on the charge-polarity control, a novel anti-ambipolar heterotransistor is proposed based on a special In2Se3&WSe2 van der Waals heterostructure. Unlike traditional logic transistors, our anti-ambipolar heterotransistor can treat an optical signal as an input to change its operating state, that is, with the switching of the optical signal, it shows a reversible polarity change between anti-ambipolar and P-type. Moreover, with the increase of laser power density from 0 to 4.4 mW cm-2, the current value corresponding to the anti-ambipolar peak of the device (Ipeak) shifts from 0 to 4.3 nA, and the voltage value corresponding to the anti-ambipolar peak of the device (Vpeak) can shift from -7 to -5.67 V. These phenomena demonstrate that the charge neutrality point of the anti-ambipolar heterotransistor can be selectively varied with the change of laser power density. In addition, the aforementioned device possesses a high Ion/Ioff ratio of about 104 (405 nm, 4.4 mW cm-2) at 0 V. These properties indicate that our unique anti-ambipolar In2Se3&WSe2 heterotransistor can be employed in photo-triggered inverters for future optoelectronic circuits, and it has great potential to improve the integration of overall chip circuits by implementing optoelectronic logic functions in a unit.

Engineering Semiconductor Layer Using Halonaphthalene Additives for Organic Opto-Inverter Circuits

Solution-processable organic field-effect transistors (OFETs) are at the forefront of the future of electronic circuits. They have the potential for low-cost, large-scale fabrication on a variety of substrates. However, their application in electronic circuits is challenged by the unforeseen presence of defects leading to lower mobility. In this contribution, the application of a photoactive polymer-based phototransistor in a digital electronic circuit is demonstrated. Initially, a solvent additive engineering strategy is adopted to tune the thin film morphology and reduce morphology-related defects, resulting in improved device performance. The incorporation of 1-bromonaphthalene improves mobility from 0.09 to 0.50 cm2 V–1 s–1 with enhancement in both photoabsorption and photostability. The results are well supported by electrical characterization and photophysical and morphological studies. Thereafter, a unique architecture of an opto-inverter is presented using the OFET. In this work, an optoelectronic logic NOT gate is also fabricated by utilizing a simple resistive load circuit. This circuit is also demonstrated to perform the combined functionality of a logic gate and a transducer. Furthermore, this technique can be easily implemented for minimizing the circuit components and complexity by replacing a photodetector and a NOT gate with a single opto-inverter in applications requiring both.

Controlled Optoelectronic Response in van der Waals Heterostructures for In‐Sensor Computing

AbstractIn‐sensor computing with visual information, which can integrate photo‐sensing, data storage, and computation functions within the same physical element, has promised a fundamentally different architecture for future machine vision technology with extreme energy and time efficiency. The elementary devices required to fulfil the goal of such a new sensory computation scheme would demand a bold functional variation to the existing sensor and data processing hardware. Here, a van der Waals (vdW) heterostructure‐based optoelectronic transistor that can act as an integrated photoreceptor, memory, and computation unit by exploiting its own physical attributes is demonstrated. It is found that diverse photoelectric control of device conductance can lead to versatile photoresponse characteristics, including memristive behaviors, retention‐, polarity‐ and strength‐tunable photoconductance, photoelectric‐coupling effect, etc. Exploiting the photoelectric‐coupling effect, reconfigurable and nonvolatile optoelectronic logic functions are realized in this device, featuring a logic‐in‐sensor unit. With the same device, both short‐ and long‐term synaptic plasticity can be faithfully emulated, rendering it an optoelectronic synaptic transistor. Moreover, a psychologic human memory model is implemented with the device, showing the emulation of memorization and learning processes. This prototypical demonstration provides a promising hardware system for visual information in‐sensor computing capable of addressing complex computation tasks.

Ag nanowires assisted CH3NH3PbBr3–ZnO heterostructure with fast negative photoconductive response

Due to its attractive interaction with light, negative photoconductivity (NPC) has received widespread attention and has been used in optoelectronic logic devices with excellent performance. However, long negative response time triggered by photogenerated carriers trapping mechanism became a bottleneck in further application. Therefore, an enhanced strategy that can speed up negative response is urgently needed. Herein, we prepared a zinc oxide microwire (ZnO MW)–silver nanowires (Ag NWs)–methylammonium lead halide perovskite (CH3NH3PbBr3) heterostructure with enhanced negative response than the previous NPC device. The Ag NWs with high mobility at the interface of ZnO and CH3NH3PbBr3 accelerate the photoresponse time from 50 to 5.4 s and improve the dark current recovery time by two orders of magnitude. This work provides a strategy to improve the negative response speed with simple operation, which represents a step toward applications in the field of fast NPC optoelectronics.

Tunable Bi‐directional Photoresponse in Hybrid PtSe2−x Thin Films Based on Precisely Controllable Selenization Engineering

AbstractBi‐directional photodetection with positive and negative photoconductance (PPC/NPC) plays a critical role in building next‐generation artificial neuromorphic systems, visual information processing and optoelectronic logic gates of the future. However, the typical device configuration based on heterostructures with strict working principles restricts the diversity of material selection. In this work, a novel strategy is proposed to fabricate bi‐directional photoresponse devices based on PtSe2−x films with precisely controllable selenization engineering. It is found that the PtSe2−x films are composed of Pt and PtSe2 components. The direction of the photocurrent can be reversibly modulated in a broadband range by tuning the ratio of PtSe2 in the film, which is ascribed to the synergistic mechanism of bolometric effect of Pt and photoconductive effect of PtSe2. The polarity switching wavelength from NPC to PPC can be further modulated through tuning the components of the film for specific demand. The tunable bi‐directional photoresponse enables the device to mimic the fundamental functions of artificial synapses all optically, such as aversion learning capability and logical functions, with high paired pulse facilitation index. This work potentially opens an opportunity for the development of advanced artificial neuromorphic systems and optoelectronic logic gates.

Nonlinear co-generation of graphene plasmons for optoelectronic logic operations

Surface plasmons in graphene provide a compelling strategy for advanced photonic technologies thanks to their tight confinement, fast response and tunability. Recent advances in the field of all-optical generation of graphene’s plasmons in planar waveguides offer a promising method for high-speed signal processing in nanoscale integrated optoelectronic devices. Here, we use two counter propagating frequency combs with temporally synchronized pulses to demonstrate deterministic all-optical generation and electrical control of multiple plasmon polaritons, excited via difference frequency generation (DFG). Electrical tuning of a hybrid graphene-fibre device offers a precise control over the DFG phase-matching, leading to tunable responses of the graphene’s plasmons at different frequencies across a broadband (0 ~ 50 THz) and provides a powerful tool for high-speed logic operations. Our results offer insights for plasmonics on hybrid photonic devices based on layered materials and pave the way to high-speed integrated optoelectronic computing circuits.

Multiposition Controllable Gate WS2/MoS2 Heterojunction Phototransistor and Its Applications in Optoelectronic Logic Operation and Emulation of Neurotransmission

AbstractBetter control of the channel is crucial to improve the performance of existing electron devices. A phototransistor with a specifically designed dual‐gate structure based on a vertical van der Waals heterojunction of WS2 and MoS2 is proposed. The top gate modulates the carrier transport in WS2 at the top of the heterojunction, whereas the back gate can simultaneously control the carrier transport in both MoS2 and WS2 regions located on either side of the heterojunction. Therefore, the rectification ratio of the WS2/MoS2 heterojunction can be modified from approximately 1 to above 104. A very low subthreshold swing of 47 mV dec−1 is obtained. Optoelectronic characterization shows that the responsivity and detectivity are as high as 167.8 A W−1 and 5.8 × 1012 Jones at 532 nm, respectively, which are attributed to the combined modulation effect of the WS2/MoS2 heterojunction and additional homojunction in WS2. Moreover, a logic operation between electronic and optical signals can be performed by utilizing only one multiposition controllable gate phototransistor. In addition, the capability of this dual‐gate phototransistor to emulate information transmission in neuromorphic architectures is presented. These results demonstrate the potential of this approach for the development of next‐generation optoelectronic devices.