Optoelectronic Industry Research Articles

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.

Deciphering ethynyl single crystal for NLO applications: Synergistic studies on the structural, Hirshfeld surface, photophysical and DFT assessment

In this contribution, we have integrated multiple approaches in investigating the profiles and behaviour of simple ethynyl derivative, 1-[4-(4-(dimethylaminophenyl)ethynyl)phenyl]ethanone (4DME) tolane which is known to be integrated widely in molecular electronics as conjugated building block in functional molecules. Prepared via simplified aerobic Sonogashira cross-couping reaction, symmetrical chromophore of 4DME crystallizes in monoclinic with complex framework containing the space group of P21/n and includes four molecules within a unit cell. The fingerprint plots and Hirshfeld surface analyses demonstrate the presence of synergism between molecules supporting nonlinear optical response of the compound. It was shown that C⋯H contact (44.5 %) is the major contribution of intermolecular interaction executed by Hirshfeld surface area. The investigation on their spectroscopic, thermal analysis and density functional theory (DFT) analysis operating under B3LYP/6-31G (d,p) were conducted to determine the energies of the LUMO and HOMO level, NLO behaviour, intermolecular charge transport facilitated by global chemical reactivity descriptors, molecular electrostatic potentials (MEP) and hyperpolarizability analyses. From the simulated DFT calculation, it shows that 4DME has good polarizability properties with HOMO-LUMO energy gap of 3.89 eV. Calculated total first hyperpolarizability βtot of 4DME were 1261.40 × 10−30 esu which can be potentially applied as good nonlinear optical materials. The preliminary outcomes prove that this simple ethynyl derivative is capable of being used in optoelectronic industry as NLO-based products. A CW diode laser operating at 532 nm wavelength was used to perform the Z-scan measurements and 4DME showed an effective value of χ(3) in order of 10−6, indicating good nonlinear properties.

(Invited) Towards GaN-on-GaN High-Power Electronic Devices

Application of gallium nitride (GaN) substrates in electronic and optoelectronic industries is constantly increasing. In order to fabricate wafers, GaN crystals of the highest structural quality and desired electrical (and sometimes optical) properties must be grown. Today, there are three main GaN crystallization methods: i/ halide vapor phase epitaxy (HVPE) with its derivatives: halide-free VPE and oxide VPE; ii/ sodium-flux; and iii/ ammonothermal. The last approach can be basic or acidic depending on what mineralizer is used to increase the solubility of GaN in the feedstock zone. In this paper we will focus on HVPE and basic ammonothermal growth of GaN [1]. Not only bulk growth will be presented. The HVPE method will also be discussed as the best method to crystallize the drift layers necessary for high-power vertical electronic devices (FET transistors, Schottky diodes).One of the best methods for introducing dopants into semiconductors is ion implantation. The introduced structural damage can be removed by a proper annealing process. The high-temperature treatment enables also electrical and/or optical activation of the implanted dopants. In the case of GaN, annealing at high temperature (~1300°C - 1400°C) seems difficult. This compound loses its thermodynamic stability slightly above 800°C at atmospheric pressure. At higher temperature the crystal will decompose. One of the solutions is to anneal GaN at high nitrogen (N2) pressure. Such technology is called ultra-high-pressure annealing (UHPA) [2]. In this paper, application of UHPA for GaN crystals and layers implanted by different ions (acceptors and donors) will be presented. The latest results of the implantation with magnesium (Mg), beryllium (Be), zinc (Zn), and calcium (Ca) ions into GaN in order to obtain p-type conductivity will be discussed [3,4]. Silicon (Si) implantation into GaN for n-type doping will also be analyzed. Structural, electrical and optical properties of implanted GaN after UHPA will be discussed in terms of application for GaN-based devices.A kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure post-implantation activation anneal without a capping layer was already demonstrated [5]. The forward characteristics of the JBS diode showed ideality factor (n) 1.03, turn-on voltage (VON) 0.75 V, current ON/OFF ratio (at ±3 V) ~1011, and specific differential ON-resistance (RON) 0.6 mΩ·cm2. The breakdown voltage of the JBS diode was 915 V.

Theoretical investigation of the structural stability, electronic and optical properties of the double perovskite Cs2ZrX6 (X=Cl, Br, I)

In recent years, in order to solve the energy issue researchers have performed much investigations, among which inorganic metal halide chalcogenides have received extensive attention in the field of materials, energy and other fields for their excellent photovoltaic properties. However, the traditional halide chalcogenide has two deadly deficiencies, poor thermal stability and the presence of toxic lead elements, which prevent its applications. Compared with ABX3-type halide chalcogenides, double lead-free perovskites usually have the advantages of better thermal stability and less toxicity, which makes it easier to be commercialized. In addition, elemental substitution methods can be employed to modulate their energy bands and optical properties. Here, the structural stability, electronic and optical properties, and thermodynamic properties of cesium zirconium halide double perovskites Cs2ZrX6 (X = Cl, Br, I) are systematically investigated based on density functional theory (DFT) to predict their applications in the photovoltaic and optoelectronic industries. The computational results show that these cesium zirconium halide double perovskites have very good structural stability as well as special optical properties such as strong light absorption, large dielectric constant, and low reflectivity. Moreover, all of them belong to direct bandgap semiconductors and possess small effective masses, which indicates that the double perovskites could be potential candidates for future optoelectronic devices and applications.

Synchronous pressure-induced enhancement in the photoresponsivity and response speed of BiOBr

The development of the optoelectronics industry relies on the constant exploration and improvement of the photoelectric properties of functional materials. Responsivity and response speed are two key performance indicators of photodetectors. However, these parameters are often mutually suppressed, and ensuring both simultaneously is challenging. Herein, we developed a viable strategy to enhance the overall photodetection performance by applying pressure to improve both the photoresponsivity and the response speed of BiOBr simultaneously. The results showed that the responsivity of BiOBr at a pressure of 3.8 GPa was more than an order of magnitude higher than that measured at the initial pressure (0.2 GPa) under Xenon-light illumination. More importantly, the response speed of BiOBr was improved by almost an order of magnitude under 3.7 GPa and 405 nm laser illumination. The considerably enhanced photoresponsivity and photoresponse speed suggest that pressure effectively reduces the effective mass of carriers and promotes charge transfer between Bi-O atoms. Our findings reveal that comprehensive enhancement of optoelectronic properties in layered compounds can be achieved through pressure modulation of the electronic structure, providing a promising approach for materials design toward extraordinary properties.

Exploring the synthesis, structure, and optoelectronic properties of lead-free halide perovskite Cs3Bi2I9 in single crystal and polycrystalline forms

In recent years, caesium bismuth iodide (Cs3Bi2I9), a lead (Pb)-free halide perovskite, has drawn more attention as a potential material than traditional semiconductor materials due to its lack of Pb toxicity and its outstanding stability against atmospheric air and moisture. Herein, the inverse temperature crystallization method is adopted to grow high-quality hexagonal-phase Cs3Bi2I9 perovskite single crystals. Furthermore, a Cs3Bi2I9 perovskite thin film is fabricated by a solution process using the two-step spin coating technique. A collective analysis of the structural properties, surface morphology, thermal stability, phase transition, and optoelectronic properties of these single crystal and polycrystalline thin films provides a comprehensive understanding and design strategy to develop environmentally stable, Pb-free, and high-performance photovoltaic and optoelectronic devices based on Cs3Bi2I9 perovskite. The findings of this study contribute to the advancement of perovskite-based technologies and pave the way for their successful integration into the renewable energy and optoelectronics industries.

Performance Improvement Based on Latitude Classification of Perovskite Light-Emitting Diodes

The Perovskite Light-emitting Diode (PeLED) can effectively convert light energy and electrical energy, and the study of Light-Emitting Diode (LED) is conducive to the efficient use of energy. Starting from the dimension classification of perovskite light-emitting diodes, this paper introduces the advantages of perovskite in different dimensions and the methods to improve the performance of perovskite light-emitting diodes. It is expected to realize the preparation of low-cost and high-performance perovskite light-emitting diodes. Light-emitting diodes or electroluminescent devices have many excellent properties such as high brightness, wide colour gamut, low power consumption, long life and environmental protection. They have been widely used in the field of display and lighting, and have become one of the most competitive products in the optoelectronic industry. With the development of the LED industry and the higher requirements for LED display in the new era, scientific researchers exploration of new electroluminescent materials has also been gradually strengthened. Among them, organic molecules and new low-dimensional halogenated perovskite have attracted much attention because of their many advantages. The performance of LED depends on the type of light-emitting material and device structure. It is also important to understand the light-emitting mechanism of such devices and their internal carrier transport mechanism. Studying the light-emitting mechanism and carrier transport mechanism of LEDs based on different light-emitting materials is not only of scientific significance, but also can provide a reliable theoretical basis for further improving their performance.

Chemically-stable flexible transparent electrode: gold-electrodeposited on embedded silver nanowires

Silver nanowires (AgNWs) with a low diameter, high aspect ratio, stable suspension, and easy synthesis have recently attracted the optoelectronic industry as a low-cost alternative to indium tin oxide transparent conductive films. However, silver nanowires are not chemically stable, and their conductivity diminishes over time due to reactions with atmospheric components. This is a bottleneck for their wide industrial applications. In this study, we aim to address this issue by synthesizing silver nanowires with an average diameter of approximately 65 nm and a length of approximately 13 µm. The prepared Ag nanowires are then applied to fabricate transparent, flexible, and chemically stable conductive films. The fabrication includes spraying of silver nanowires suspension on a glass substrate followed by Dr. blade coating of polystyrene (PS) solution and delamination of the PS-AgNWs film. The resulting film exhibits an optimum sheet resistance of 24 Ω/□ and transmittance of 84%. To further enhance the stability of the transparent conductive film, the facial and scalable double pulse electrodeposition method is used for coating of gold on the exposed surface of the AgNWs embedded in PS. The final transparent film with gold coating demonstrates a remarkable stability under harsh conditions including long exposure to UV light and nitric acid solution. After 100 min of UV/Ozone treatment, the increase in sheet resistance of the optimal PS-AgNW@Au sample is 15.6 times lower than the samples without gold coating. In addition, the change in sheet resistance after 2000 bending cycles in the optimal PS-AgNW@Au electrode is measured and it showed an increase of only 22% of its initial sheet resistance indicating its good flexibility. The proposed electrode performs an excellent chemical stability, good conductivity, transparency, and flexibility that makes it a potential candidate for various optoelectronic devices.

A potassium lead 2-methylmalonate-iodide nonlinear optical crystal with strong second-harmonic generation response and large birefringence

Nonlinear optical (NLO) crystals play a significant role in optoelectronic industry. Herein, a new NLO crystal, K(H2O)[KI][PbI(C4H4O4)], has been rationally obtained by tuning halide perovskite materials with 2-methylmalonate group. K(H2O)[KI][PbI(C4H4O4)] features that the highly distorted [PbO4I2] polyhedron with large hyperpolarizability and prominent polarizability anisotropy is served as a bifuntional unit. Remarkably, the distorted [PbO4I2] polyhedrons are aligned in an oriented arrangement that leads to the effective superposition of their microscopic second-order nonlinear susceptibilities and the enhancement of optical anisotropy. Notably, K(H2O)[KI][PbI(C4H4O4)] exhibits a strong phase-matching SHG response of 5.6 × KDP and a large birefringence (Δnobv. = 0.24@546 nm). Theoretical calculations elucidate that the strong SHG response and the large birefringence are predominantly attributed to the directional arrangement of the highly distorted [PbO4I2] polyhedrons. Our discovery provides an effective path for the rational exploration of high-performance NLO crystals.

First-principles calculations to investigate structural, electronic, optical and elastic properties of α-Ca3N2

The optoelectronic industry, which has become a cornerstone, requires a semiconductor compound to function as a sustainable and green energy source. In this connection, the present study provides a systematic approach to examine the electronic and optical properties of α-Ca3N2 using the linear combination of atomic orbitals method. The xc-functional BECKE-PBE gives the best results for electronic properties by describing the band gap correctly. The dispersion curve shows that α-Ca3N2 is a semiconductor with an indirect band gap of 1.33 eV along the H-Γ direction. Effective masses of electrons and holes are calculated at the peak of the lowest conduction band and highest valence band, along the Γ- direction. Calculation for optical properties has been performed using coupled-perturbed Hartree-Fock scheme for static values and phonon spectrum calculations are performed for dynamic dielectric functions. Further, frequency dependent electron loss function and reflectivity are determined from the dielectric functions. The elastic constants are estimated and elastic moduli are determined. Bulk modulus of 80.6 GPa and Poisson’s ratio of 0.275 reveals that α-Ca3N2 is a hard and ductile material. The characteristic properties of α-Ca3N2 make it a suitable candidate for optoelectronic applications.

Organic-inorganic perovskite structure-based (OIPSB) solar cells: A progress from invention

The organic-inorganic perovskite structure-based (OIPSB) materials are key material for optoelectronic industry. In this review paper, we have discussed some physical properties of OIPSB compounds (lead-based) which we got from previous research findings. The main compounds of OIPSB have been given with their electronic and optical properties. Furthermore, their applications are discussed in solar cells with device structures. A full mini review of organic-inorganic perovskite solar cells (OIPSCs) is given from its initial Power conversion efficiency (PCE) <4% to highest PCE of > 24%.

Textures and chemical compositions of muscovite and quartz: Implications for granite-hosted high-purity quartz mineralization and exploration in South China

High-purity quartz (HPQ) has extremely low total impurity content (<20 ppm, IOTA CG, a HPQ standard of Unimin) and is indispensable to many high-tech optoelectronic industries. Whilst the controlling factors for the granite-hosted HPQ formation are yet to be well resolved, it is generally considered to be related to temperature and pressure, and/or specific purification processes. Here, we analyzed the chemical compositions of quartz and muscovite from various HPQ occurrences in South China. The results indicate that the F content in muscovite and Ti content in quartz provide useful indicators for exploring and characterizing the granite-hosted HPQ. More specifically, we found that granites containing muscovite with ≤ 0.100 wt% F have the potential to form 4 N5-grade (SiO2 ≥ 99.995 wt%) HPQ, whereas those with 0.1–1 wt% F have the capacity to generate 3 N- (SiO2 ≥ 99.900 wt%) to 4 N5-grade HPQ. The ideal quartz crystallization temperature (titanium-in-quartz geothermometer (TitaniQ)) to generate 4 N- (SiO2 ≥ 99.990 wt%) grade HPQ is 420 to 490 °C. Higher F content in the granitic melt, which implies higher volatile content, would lower the magma solidus and contribute to the incorporation of impurities such as lattice-bound Ti-Al and fluid inclusions. We propose that in-situ analysis of muscovite and quartz supports rapid assessment of the metallogenic potential of granite-hosted HPQ.

Optical properties of methyl-substituted germanane monolayer in the presence of the external magnetic field, strain and spin-orbit coupling.

In this research, we use the tight-binding model, which includes spin-orbit coupling and an external magnetic field, to describe the optical properties of the methyl-substituted germanane (GeCH3) monolayer. We have applied the Kubo formula, linear response theory, and Green's function approach to calculate the optical absorption coefficient of the GeCH3monolayer. Here, the effects of an external magnetic field, strain, spin-orbit coupling, temperature, and electron/hole doping on the frequency dependence behavior of the optical conductivity have been investigated in detail. Our numerical results show that with increasing the external magnetic field, strain, and electron doping, the weight of the Drude increases. The optical absorption peak decreases and shifts to higher frequencies by applying an external magnetic field, strain, and electron doping. Controlling the optical and electronic properties of GeCH3is leading to use this structure it in the electronic and optoelectronic industries.

Enhanced photoresponsiveness of methylammonium lead iodide nanoplates via high pressure quenching

Organic–inorganic halide perovskites (HOIPs) are promising light-electric conversion materials for optoelectronic devices. Improving the light responsiveness properties of HOIPs is of great significance for the development of the optoelectronics industry. In this study, we have investigated the effect of pressure on the optoelectronics properties of the archetypical representative HOIPs methylammonium lead iodide nanoplates. An enhancement of the photocurrent accompanied by 4 times-prolonged carrier lifetime, enhanced photoluminescence (PL) intensity, and narrowed bandgap were observed via applying pressure to about 0.36 GPa, while these physical properties got worse with further compression. Strikingly, when released to ambient conditions, the photocurrent is further increased to 4.5 times and the carrier lifetime is prolonged to 1.5 times of the corresponding values for an initial sample, while the bandgap slightly blueshifted and the PL intensity slightly reduced. These results suggest that the increased photocurrent may be related to the increased carrier lifetime of the quenched sample, which gives more time for the separation of photoelectrons from vacancies before recombination. This study demonstrated that pressure engineering can be a real possibility for improving the light responsiveness of the HOIPs material in practical applications.

A Survey on Fluorinated Greenhouse Gases in Taiwan: Emission Trends, Regulatory Strategies, and Abatement Technologies

Fluorinated greenhouse gases (F-gases), including hydrofluorocarbons (HFCs), perfluorocarbons (PFCs), sulfur hexafluoride (SF6), and nitrogen trifluoride (NF3), are used in a variety of applications, but they are potent greenhouse gases (GHGs). Therefore, they have been blanketed into the list of items to be phased out under international protocols or treaties. During the desk research, the updated statistics of Taiwan’s National Inventory Report (NIR) were used to analyze the trends of F-gases (i.e., HFCs, PFCs, SF6, and NF3) emissions during the period of 2000–2020. Furthermore, the regulatory strategies and measures for the reduction of the four F-gas emissions will be summarized to be in accordance with the national and international regulations. With the rapid development in the electronics industry, the total F-gas emissions indicate a significant increase from 2462 kilotons of carbon dioxide equivalents (CO2eq) in 2000 to the peak value (i.e., 12,643 kilotons) of CO2eq in 2004. However, it sharply decreased from 10,284 kilotons of CO2eq in 2005 to 3906 kilotons of CO2eq in 2020 due to the ongoing efforts of the regulatory requirements and the industry’s voluntary reduction in time sequence. It was also found that the most commonly used method for controlling the emissions of F-gases from the semiconductor and optoelectronic industries in Taiwan is based on the thermal destruction-local scrubbing method.

Teaching Reform in The Demonstration Professional Construction Site of “Curriculum Ideology and Politics”

This major is guided by the principle of "application first, strengthening engineering practice ability, integrating industry and education, highlighting the background of optoelectronic industry, combining industry and management, and showing quality management characteristics". It is dedicated to cultivating application-oriented engineering talents who can meet the needs of regional optoelectronic industry and have the ability to design, implement and apply quality control systems for measurement and control systems and instrumentation production processes, and can engage in technology development, engineering application, production operation, quality management and other work in instrumentation and related fields. The orientation of the major is clear, and the service orientation is clear, which is in line with the development orientation and school direction of the university. Curriculum ideological and political teaching reform for this professional course has the unparalleled advantages of traditional science and technology courses. The education in humanistic cultivation, good moral development and solving complex engineering problems is to explore the resources of curriculum ideology and politics in the curriculum teaching.

Layered B2O3/CsPbBr3 perovskite composite embedded using glass as microreactor with enhanced stability and high-efficiency light extraction

Lead halide perovskite quantum dots are considered to be one of the best candidates for the next generation of light conversion materials. However, their practical application is greatly hindered by its intrinsic poor stability and once exposed to air, heat moisture and illumination. Here, we report a novel reaction scheme that allows the simultaneous production of high-quality CsPbBr3 nanocrystals (NCs), self-healing process that optimized the crystallinity of CsPbBr3 NCs, and the formation of a protective coating layered structure of a densely packed two-dimensional B2O3 crystals with the assistance of water. Due to the inherent refractive index mismatch in the B2O3-CsPbBr3-B2O3 (B-C-B) laminated structure, excellent light extraction efficiency was achieved. The resulted layered B2O3/CsPbBr3 perovskite composite showed exceptionally high photoluminescence quantum yield (PLQY ∼90%) and excellent stability over 2 years under normal storage condition. A high-performance backlight liquid crystal display (LCD) was designed as B2O3/CsPbBr3 @ K2SiF6: Mn4+ (KSF: Mn4+) @ polydimethylsiloxanes (PDMS) monolithic film, which featured an optimal white emission (with correlated color temperature of 5327 K), that covered 130% of NTSC standard color gamut area of CIE1931, thereby demonstrating a great application potential in the optoelectronics industry.

Fluorescence signal from carbon quantum dots synthesized from natural resources

The present work deals with synthesis of carbon quantum dots (CQDs) from some easily available organic resources as urea and citric acid. The heating of these precursors leads to formation of strong photoluminescent carbon quantum dots (CQDs). The characteristics of prepared CQDs have been analyzed by UV–Vis absorption, fluorescence and FTIR spectroscopy. The average size of synthesized CQDs obtained was 6.8 nm which was further verified with FESEM image analysis. The band gap of 3.15 eV have been estimated for the synthesized CQDs from absorption data. The appearance of high intense luminescence emission validates CQDs’ strong candidature as promising sensors for today’s optoelectronic and biomedical industries.

Unleashing the Influence of High-Throughput Flow Process Optimization on Luminescent Behavior of Engineered ZnO Quantum Dots

Engineered ZnO quantum dots (E-QDs) are sought-after nanostructures in healthcare and optoelectronic industries, necessitating a paradigm shift toward high-throughput continuous flow platforms, the crux to whose successful design and performance lies in comprehending the nucleation-growth kinetics, defect engineering, and reaction dynamics. This work investigates the synergistic interplay of enhanced hydrodynamics and heat–mass transfer in the helical coil reactor, fostering rapid nucleation-growth-driven E-QDs fabrication. We integrated computational fluid dynamic modeling, and comprehensive experimentation for producing E-QDs with record-high photoluminescence quantum yield (PLQY) (∼89% in the yellow-green spectrum) by carefully creating oxygen vacancies via a novel reproducible protocol. Dean vortices formed due to the helical geometry facilitated ultrafast mixing and accelerated reaction kinetics, yielding colloidally stable E-QDs in gram-scales [ζ = −39.7 mV, polydispersity index (PDI) ∼0.22] with a narrow particle size distribution (average particle size ∼4.5 nm). Contrastingly, the conventional batch route produced less stable E-QDs with ζ value of −15.3 mV, PDI ∼0.41, and diminished PLQY (∼40%) because of inadequate process control, batch-to-batch variability due to poor mixing, and heat transfer. The simple, economical, in-house-fabricated flow reactor manifested ∼90% increment in yield and reduced product cost. Thus, this research demonstrated the benefits of simulation-driven process engineering and reactor design in catalyzing QDs-based innovations.

Improvement in luminescence of thermally stable CaMoO4:Tb3+ green phosphor by Bi3+ ions

The growing optoelectronic industries have prompted researchers to develop a single-component green phosphor for diverse applicability. It is well known that Tb3+ doped phosphors emit green light due to strong 5D4→7F5 transition. The green emission of Tb3+ ion can be enhanced by using sensitizers such as Bi3+ ion, which creates intermediate energy levels between the host and Tb3+, thereby, achieving efficient energy transfer between the host and Tb3+. In this article, we have reported a substantial improvement in the green emission of Tb3+ doped CaMoO4 by Bi3+ co-doping. The phosphors have been successfully prepared via a lucrative self-combustion process. The XRD patterns reveal an impurity-free tetragonal crystalline structure of all the phosphors. The Tb3+ doped CaMoO4 gives three major emissions at 489 nm, 544 nm and 621 nm corresponding to the Tb3+ transitions from 5D4 to 7F6, 7F5, and 7F3, respectively. The maximum emission has been achieved for 5% Tb3+ doped CaMoO4, which is further enhanced by 47% via co-doping of Bi3+. The improvement in emission intensity for Bi3+ co-doped phosphors is attributed to improved crystalline nature and transfer of energy from Bi3+ to Tb3+ levels. The energy transfer process from [MoO4]2- to Bi3+ and Tb3+ is explained in detail and maximum improvement is obtained upon co-doping of 4% Bi3+ ions. The incorporation of Bi3+ ions also results in shifting of CIE coordinates and color purity towards green color. The activation energy required for the thermal quenching is 0.25 eV, much better than already reported green phosphors. There is no change in the CIE coordinates of the overall emission with temperature indicating the better emission color stability of the phosphor. Hence with optimum concentration of Bi3+ and Tb3+ ion in CaMoO4 they can be used as potential green emitting phosphors.