Optoelectronic Devices Research Articles

On-demand catalysed n-doping of organic semiconductors.

A new approach to control the n-doping reaction of organic semiconductors is reported using surface-functionalized gold nanoparticles (f-AuNPs) with alkylthiols acting as the catalyst only upon mild thermal activation. To demonstrate the versatility of this methodology, the reaction of the n-type dopant precursor N-DMBI-H with several molecular and polymeric semiconductors at different temperatures with/without f-AuNPs, vis-à-vis the unfunctionalized catalyst AuNPs, was investigated by spectroscopic, morphological, charge transport, and kinetic measurements as well as, computationally, the thermodynamic of catalyst activation. The combined experimental and theoretical data demonstrate that f-AuNPs is inactive at room temperature both in solution and in the solid state, catalyst activation occurs rapidly at mild temperatures (~ 70 °C) and the doping reaction completes in few seconds affording large electrical conductivities (~ 10 - 140 S cm-1). The implementation of this methodology enables the use of semiconductor+dopant+catalyst solutions, will broaden the use of the corresponding n-doped films in opto-electronic devices such as thin-film transistors, electrochemical transistors, solar cells, and thermoelectrics well as guide the design of new catalysts.

Orientation-Dependent Photoconductivity of Quasi-2D Nanocrystal Self-Assemblies: Face-Down, Edge-Up Versus Randomly Oriented Quantum Wells.

Here, strongly orientation-dependent lateral photoconductivity of a CdSe monolayer colloidal quantum wells (CQWs) possessing short-chain ligands is reported. A controlled liquid-air self-assembly technique is utilized to deliberately engineer the alignments of CQWs into either face-down (FO) or edge-up (EO) orientation on the substrate as opposed to randomly oriented (RO) CQWs prepared by spin-coating. Adapting planar configuration metal-semiconductor-metal (MSM) photodetectors, it is found that lateral conductivity spans ≈2 orders of magnitude depending on the orientation of CQWs in the film in the case of utilizing short ligands. The long native ligands of oleic acid (OA) are exchanged with short-chain ligands of 2-ethylhexane-1-thiol (EHT) to reduce the inter-platelet distance, which significantly improved the photoresponsivity from 4.16, 0.58, and 4.79 mA W-1 to 528.7, 6.17, and 94.2mAW-1, for the MSM devices prepared with RO, FO, and EO, before and after ligands exchange, respectively. Such CQW orientation control profoundly impacts the photodetector performance also in terms of the detection speed (0.061 s/0.074 s for the FO, 0.048 s/0.060 s for the EO compared to 0.10 s/0.16 s for the RO, for the rise and decay time constants, respectively) and the detectivity (1.7×1010, 2.3×1011, and 7.5×1011 Jones for the FO, EO, and RO devices, respectively) which can be further tailored for the desired optoelectronic device applications. Attributed to charge transportation in colloidal films being proportional to the number of hopping steps, these findings indicate that the solution-processed orientation of CQWs provides the ability to tune the photoconductivity of CQWs with short ligands as another degree of freedom to exploit and engineer their absorptive devices.

High responsivity photodetector based on MEH-PPV/CsPbBr3 heterojunction

Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBr3 heterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBr3 perovskite QDs and MEH-PPV. The MEH-PPV/CsPbBr3 heterojunction improves the energy level arrangement, and CsPbBr3 QDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity (R) of MEH-PPV/CsPbBr3 heterojunction PD is 11.98 A W−1, the specific detectivity (D*) is 6.98 × 1011 Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices.

Ultrathin Non‐van der Waals Chromium Sulfide: Liquid Phase Exfoliation, Characterization, and Self‐Powered Photoelectrochemical Photodetector Application

AbstractIn the search for new advanced 2D materials for technological applications and to expand the research of non‐van der Waals (non‐vdW) 2D electronic devices, this study presents a novel strategy for liquid phase exfoliation (LPE) of non‐vdW Cr2S3 to produce Cr2S3 nanosheets (NSs). By utilizing N‐methyl‐2‐pyrrolidone (NMP), bulk Cr2S3 is separated along the (001) plane, resulting in the formation of NSs with an average thickness of ≈3 nm. Various characterization techniques are applied to the Cr2S3 material before and after LPE. Subsequently, the obtained Cr2S3 NSs are integrated into a photoelectrochemical (PEC)‐type photodetector (PD) to evaluate the photoelectric conversion efficiency under varying conditions. The findings indicate that the developed PD exhibits a distinct self‐powered photodetection capability with a photocurrent (Pph) of 39.5 nA cm−2, a photoresponsivity (Rph) of 622 nA W−1, and a detectivity (D*) of 0.5 × 107 Jones under 350 nm irradiation at 0 V. Moreover, the PD demonstrates rapid response time (0.06 s) and good long‐term stability (over 15 days), thus providing valuable insight for the advancement of non‐vdW Cr2S3‐based optoelectronic devices.

Nanopatterning and nanostructure formation with femtosecond laser: Revolutionizing surface engineering on soda-lime glass

Glass, due to its high transparency and chemical stability, has found extensive use in electrical, electronic, and optoelectronic devices. This study presents a novel approach to modify the morphological features of laser-generated tracks and produced nanoparticles in soda-lime glass using the accuracy of micro processing by femtosecond laser pulses. The investigation has meticulously examined how variations in the incident laser pulse energy and scanning velocity dictate the formation of distinct morphological characteristics on the glass surface. FESEM has revealed three distinct morphological formations, including particulate, self-ordered periodic surface structures, and a combination of the two. Additionally, TEM analysis has shown the generation of both spherical and irregular-shaped nanoparticles with diameters ranging from 10 nm to less than 2 μm, and an amorphous structure confirmed by SAED patterns. The periodicity of the LIPSS was found to be 550±25 nm, and they were oriented perpendicular to the laser polarization vector.

Influence of Pressure on Structural, Electronic, Optical, and Elastic Properties of Lead-Free Chalcogen Perovskite LaLuS3 via First-Principles Calculations: Implications for Optoelectronic Applications

Abstract Chalcogen perovskites have garnered increasing attention as promising materials for optoelectronic applications. In this study, we employed the first-principles method to investigate the structural, electronic, optical, and elastic properties of LaLuS3 under hydrostatic pressure at various levels. Through a thorough analysis of the calculated electronic structures, we observed that LaLuS3 exhibits direct band gaps, with the magnitudes of these gaps changing as the pressure varied. Specifically, the band gaps decrease by 2.19 eV, 2.025 eV, 1.365 eV, and 0.6043 eV at hydrostatic pressures of 0%, 10%, 20%, and 30% GPa, respectively. Furthermore, we observed shifts in the conduction band minimum and valence band maximum positions, indicating the potential of LaLuS3 for perovskite-based devices. This suggests that external pressure can serve as a powerful tool for designing new functional materials with intriguing properties. Our investigation also revealed promising optical properties of LaLuS3 under high pressures, further affirming its potential for optoelectronic and solar cell applications. The optical functions of the material are enhanced with increasing pressure, particularly in the ultraviolet range, highlighting its suitability for a wide range of optoelectronic devices. Moreover, while maintaining mechanical stability, hydrostatic pressure exerts a significant influence on the mechanical properties of LaLuS3. Lastly, our calculations on anisotropy demonstrate that applied pressure can enhance the anisotropic nature of LaLuS3. This comprehensive study underscores the efficacy of hydrostatic pressure as a systematic approach to modifying the photovoltaic performance of halide perovskites.

Defect Engineering and Emission Tuning of Wide-Bandgap MAPbCl3 Perovskite.

Lead-chloride perovskites are promising candidates for optoelectronic applications, such as visible-blind UV photodetection. It remains unclear how the deep defects in this wide-bandgap material impact the carrier recombination dynamics. In this work, we study the defect properties of MAPbCl3 (MA = CH3NH3) based on photoluminescence (PL) measurements. Our investigations show that apart from the intrinsic emission, four sub-bandgap emissions emerge, which are very likely to originate from the radiative recombination of excitons bound to several intrinsic vacancy and interstitial defects. The intensity of various emission features can be tuned by adjusting the type and ratio of precursors used during synthesis. Our study not only provides important insights into the defect property and carrier recombination mechanism in this class of material but also demonstrates efficient strategies for defect passivation and engineering, paving the way for further development of lead-chloride perovskite-based optoelectronic devices.

Rotational angle and speed detection via a chip-scale GaN optoelectronic device

Rotational angle and speed detection via a chip-scale GaN optoelectronic device

Exploring the Post-Annealing Influence on Stannous Oxide Thin Films via Chemical Bath Deposition Technique: Unveiling Structural, Optical, and Electrical Dynamics

Stannous oxide (SnO2) thin films have garnered significant attention for their promising applications in various electronic and optoelectronic devices. In this study, we investigate the impact of post-annealing on the structural, optical, and electrical properties of stannous oxide thin films deposited using the chemical bath deposition (CBD) technique. The thin films were prepared on a Borosilicate glass substrate, followed by a controlled annealing process to enhance their performance. Structural analysis was conducted using techniques such as X-ray diffraction (XRD) to examine the cubic crystalline structure and the crystallite size increase induced by post-annealing. The results revealed alterations in grain size from the SEM and the purity of samples confirmed from EDX results. The optical properties of the Stannous oxide thin films were examined using UV-Vis spectroscopy. The optical absorption and bandgap characteristics were analyzed to understand how post-annealing influences the optical behavior of the thin films. Where the optical absorption was 320nm and the bandgap ranges were 3.86eV to 3.83eV. Furthermore, the electrical properties of the thin films were evaluated semiconducting nature, and conductivity increased with rising post-annealing. The findings from this study contribute to the understanding of the role of post-annealing in tailoring the properties of Stannous oxide thin films. The optimization of structural, optical, and electrical characteristics is crucial for their successful integration into electronic and optoelectronic devices.

Band Engineering of Perovskite Quantum Dot Solids for High-Performance Solar Cells.

CsPbI3 perovskite quantum dot (PQD) shows high potential for next-generation photovoltaics due to their tunable surface chemistry, good solution-processability and unique photophysical properties. However, the remained long-chain ligand attached to the PQD surface significantly impedes the charge carrier transport within the PQD solids, thereby predominantly influencing the charge extraction of PQD solar cells (PQDSCs). Herein, a ligand-induced energy level modulation is reported for band engineering of PQD solids to improve the charge extraction of PQDSCs. Detailed theoretical calculations and systemic experimental studies are performed to comprehensively understand the photophysical properties of the PQD solids dominated by the surface ligands of PQDs. The results reveal that 4-nitrobenzenethiol and 4-methoxybenzenethiol molecules with different dipole moments could firmly anchor to the PQD surface thoroughly the thiol group to modulate the energy levels of PQDs, and a gradient band structure within the PQD solid is subsequently realized. Consequently, the band-engineered PQDSC delivers an efficiency of up to 16.44%, which is one of the highest efficiencies of CsPbI3 PQDSCs. This work provides a feasible avenue for the band engineering of PQD solids by tuning the surface chemistry of PQDs for high-performing solar cells or other optoelectronic devices. This article is protected by copyright. All rights reserved.

Tunable exciton valley-pseudospin orders in moiré superlattices.

Excitons in two-dimensional (2D) semiconductors have offered an attractive platform for optoelectronic and valleytronic devices. Further realizations of correlated phases of excitons promise device concepts not possible in the single particle picture. Here we report tunable exciton "spin" orders in WSe2/WS2 moiré superlattices. We find evidence of an in-plane (xy) order of exciton "spin"-here, valley pseudospin-around exciton filling vex = 1, which strongly suppresses the out-of-plane "spin" polarization. Upon increasing vex or applying a small magnetic field of ~10 mT, it transitions into an out-of-plane ferromagnetic (FM-z) spin order that spontaneously enhances the "spin" polarization, i.e., the circular helicity of emission light is higher than the excitation. The phase diagram is qualitatively captured by a spin-1/2 Bose-Hubbard model and is distinct from the fermion case. Our study paves the way for engineering exotic phases of matter from correlated spinor bosons, opening the door to a host of unconventional quantum devices.

CuO nanoflowers: Multifaceted implications of various precipitating agents on rectification behaviour

In order to achieve the best possible use of traditional energy resources for the preservation of the environment, semiconductor-based optoelectronic devices are one of the most intriguing methods for converting light energy into electrical energy. CuO has been extensively explored as a material for energy conversion and the development of photo-detectors due to its notable characteristics among other metals, especially its non-toxicity, abundance, high efficiency, electrochemical stability and low cost/promising photodiode. However, some drawbacks limit its practical application in white light and photo-detector, including the rapid recombination rate of photo-generated electron-hole pairs and destitute response to visible light. As a result, several strategies have been developed from an optoelectronics perspective to eradicate these deficiencies and make an effort to enhance CuO photodiode activities. In this research work, the electrical characteristics and rectification behaviour of CuO with various precipitating agents have been examined. The CuO nanoparticles can be synthesized by co-precipitation technique prepared with different precipitants. Through this research, several parameters, such as the structural, functional, morphological, optical and electrical characteristics, were investigated by changing the precipitants. The functional group formation of pure CuO phase was confirmed by FT-IR studies. UV–Vis absorption measurements indicate that the band gap of the CuO nanoparticles was ranging from 2.40 to 2.85 eV. As a diode, CuO/p-Si exhibits a non-ideal behaviour and under light conditions with Na2CO3 precipitant, the better ideality factor is about 2.35. The barrier height is determined by the thermionic emission theory to be 0.77 and 0.79 eV in the dark and light conditions respectively.

Substitution effects on the photoinduced excited state dynamics of perylenemonoimides in solution and thin films.

Perylene monoimide (PMI) derivatives are attracting significant attention due to their strong absorption in the visible range, thermal stability, and synthetic accessibility. These properties make them promising for application in various areas such as optoelectronic devices, photosensitizers, etc. In this work, the photophysical properties and excited state dynamics of four different PMI derivatives (PMIB, BrPMITB, PMITB, and APITB) were studied in solution and thin films utilizing steady-state and time-resolved spectroscopic techniques. Among the four PMI derivatives, APITB is designed as a donor-acceptor dyad, with thianthrene as a donor and PMI as an acceptor. The activation of the triplet state through the spin-orbit charge transfer intersystem crossing (SOCT-ISC) process in THF was observed upon substitution with the thianthrene group at the peri position of the PMI moiety. The SOCT-ISC process facilitates triplet formation in the APITB dyad within 423 ps. Meanwhile, other PMI derivatives showed fluorescence within the femtosecond timescale in THF. The PMI derivatives in thin films displayed different photo physical properties to those in THF. This discrepancy arises due to the effective intermolecular coupling between the PMI derivatives in thin films.

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection.

The unique features of edges in van der Waals materials may lead to edge-basal plane contacts that could provide new opportunities for electronic and optoelectronic devices. However, few studies have addressed edge/basal plane contact heterojunctions owing to the formidable challenges in integrating edges with the basal plane to form a heterojunction. Here, taking the example of black phosphorus (BP)/ReS2, a heterojunction with contact between the edge and the basal plane was successfully achieved by the introduction of a nanoskiving technique to fabricate BP edges with controlled orientation, followed by the dry transfer of a ReS2 flake. The deformation of BP during the nanoskiving process was clearly revealed, where interlayer slipping in the BP determined the formation of the edges. The edge/basal plane contact heterojunctions based on BP/ReS2 exhibited a reverse-rectifying behavior upon contact, and a high rectifying current was attributed to direct tunneling and Fowler-Nordheim tunneling in low and high bias regimes, respectively. As a photodetector, the heterojunction diode demonstrated an impressive responsivity of 65 A/W, a rapid response time (<10 ms), and polarization-sensitive detection under 532 nm illumination without gate biasing.

Comprehensive investigation of Thermal Induced Reorganization of Porous-Germanium structures

Porous germanium (PGe) substrates have recently attracted significant attention for the development of lightweight and flexible solar cells and optoelectronic devices. A reliable approach for releasing epitaxial layers based on Germanium and reusing the substrate involves utilizing a bilayer structure of PGe. The growth of such detachable devices holds great potential for integration onto the Si platform. The used structure of PGe is made of a low-porosity layer serving as epitaxial seed on top of high-porosity one used as a weak separation layer. In this work, we investigate the impact of thermal annealing on the PGe morphology for deeper understanding of the mechanisms involved in the formation of the epitaxial seed layer and the voided weak layer underneath. Indeed, thermal-induced reconstruction has been investigated at various annealing temperatures and times for PGe layers with differing porosity levels, encompassing low, high, and gradual porosity profiles. Our findings reveal the formation of a modified substrate at low annealing temperatures, resulting in a suspended membrane on top of the fragile separation layer, rendering it suitable for detachment and subsequent substrate reuse.

Precise Crystal Orientation Identification and Twist-Induced Giant Modulation of Optical Anisotropy in 1T'-ReS2.

The ability to precisely identify crystal orientation as well as to nondestructively modulate optical anisotropy in atomically thin rhenium dichalcogenides is critical for the future development of polarization programmable optoelectronic devices, which remains challenging. Here, we report a modified polarized optical imaging (POI) method capable of simultaneously identifying in-plane (Re chain) and out-of-plane (c-axis) crystal orientations of the monolayer to few-layer ReS2, meanwhile, propose a nondestructive approach to modulate the optical anisotropy in ReS2 via twist stacking. The results show that parallel and near-cross POI are effective to independently identify the in-plane and out-of-plane crystal orientations, respectively, while regulating the twist angle allows for giant modulation of in-plane optical anisotropy from highly intrinsic anisotropy to complete optical isotropy in the stacked ReS2 bilayer (with either the same or opposite c-axes), as well modeled by linear electromagnetic theory. Overall, this study not only develops a simple optical method for precise crystal orientation identification but also offers an efficient light polarization control strategy, which is a big step toward the practical application of anisotropic van der Waals materials in the design of nanophotonic and optoelectronic devices.

High-Performance CsPbBr3-Silicon Heterojunction Photodetectors Fabricated by Chemical Vapor Deposition

Abstract Inorganic perovskite cesium lead halide (CsPbBr3) has attracted extensive research attention due to its excellent photoelectric properties and long-term stability to water, oxygen, light and heat. In this work, high crystallinity CsPbBr3 microcrystals with different morphologies and grain sizes were synthesized by one-step chemical vapor deposition (CVD) on silicon (Si) wafers and silicon nanowires (SiNWs), respectively. Characterization results show that the CsPbBr3 microcrystals grown on SiNWs (CsPbBr3-SiNWs) display more compact and uniform morphologies than those grown on Si wafer (CsPbBr3-Si). Moreover, CsPbBr3-SiNWs exhibits higher detectivity and larger on/off ratio than CsPbBr3-Si, which are 5.1×1012 Jones over 3.4×1012 Jones, and 51.3 over 14.7, respectively. Furthermore, CsPbBr3-SiNWs shows a faster photo response with a rise/fall time of 0.22 s/0.28 s than 0.26 s/0.32 s in CsPbBr3-Si. In addition, the CsPbBr3-SiNWs photodetector maintained 90% of its original photocurrent after 60 days of exposure to air, showing excellent stability. These results strongly suggest a promising fabrication approach for constructing perovskite-based heterojunction optoelectronic devices with high performance and excellent stability.

Enhancing mid-infrared surface phonon polariton modes: optimization of structural parameters in Nb-doped SrTiO3 with hole array structures for advanced infrared sensors

This study utilized the finite difference time domain method to investigate the mid infrared surface phonon polaritons and localized surface phonon resonances in undoped and niobium (Nb)-doped SrTiO3 (STO) with planar and holes array structures. Research has shown that Nb-doped STO operates in the Reststrahlen band of 8.06–18.48 µm, providing a wider spectral response than undoped STO (12.58–18.26 µm) and effectively covering the atmospheric window of long wave infrared. This indicates that the increase in virtual permittivity has the least impact on spectral broadening, indicating that the new infrared sensor technology has broad prospects. The optimization of structural parameters, including the period, filling factor, and depth of STO holes array, as well as the response to changes in incident light angle, is crucial for guiding the design of high-performance optoelectronic devices. In addition, this study explored the excitation of four resonant modes within a holes array and analyzed their relationship with array parameters to enhance the design of optoelectronic applications.

Optical Third Harmonic Generation of Spherical Quantum Dots under Inversely Quadratic Hellmann Plus Inversely Quadratic Potential

Abstract The third harmonic generation (THG) coefficient for the spherical quantum dot (QD) system with Inversely Quadratic Hellmann Plus Inversely Quadratic Potential (IQHIQP) is investigated theoretically, considering the regulation of the quantum size, confinement potential depth and external environment. The numerical simulation results indicate that the THG coefficient can reach the order of 10-12 m2/V2, which strongly relies on the tunable factor, with its resonant peak experiencing a red-shift or blue-shift. Interestingly, the effect of temperature on the THG coefficient in terms of peak location and size is consistent with the quantum dot radius but contrasts with the hydrostatic pressure. Thus, it is crucial to focus on the influence of internal and external parameters on nonlinear optical effects, and to implement the theory in practical experiments and the manufacture of optoelectronic devices.

Development and characterization of self-powered, highly sensitive optoelectronic device based on PVA-rGO nanofibers/n-Si.

This study provided a promising way to fabricate low-cost and high-performance PVA-RGO nanofibers/n-Si heterojunction photodetector. For this purpose, the hybrid heterojunction with a very-high rectification ratio (2.4×106) was achieved by successfully coating PVA-RGO nanofibers on n-Si wafer by electrospinning method. When the electro-optical analysis of the fabricated heterojunction photodetector under visible light depending on the light intensity, UV and IR lights was examined in detail, it was observed that the photodetector exhibited both self-powered behavior and very high photo-response under each light sources. However, the highest optical performance was obtained under UV (365 nm) originated from PVA-RGO layer and IR (850 nm) light from both interfacial states between PVA-RGO nanofibers and Si and from Si layer. Under 365 nm UV light, the maximum performance values of R, D, ON/OFF ratio, NPDR and EQE (%) were obtained as 688 mA/W, 1.15×1015 Jones, 2.49×106, 8.28×1010 W-1 and 234%, respectively.&#xD.