Abstract
In this paper, we study the influence of Ni-doping on A- and B-exciton polariton dispersion in MoS2 nanosheets. In particular, we have calculated the effect of the Ni-concentration on the energy dispersion and therefore we have deduced the effective masses by adjusting the hopping parameter. The E A , E B -exciton transition energies and the hopping parameter are discerned from the PL of Ni-MoS2 nanosheets. It is shown that the Ni changes considerably the bandgap and as a result the electronic band structure, the effective masses, the optical transition, and the hopping term. We found that the increasing concentration of Ni-dopant can modulate and favors the mixture of A- and B-exciton peaks of MoS2 nanosheets. The diverging Ni-concentration of A- and B-exciton polariton dispersion are also discerned and discussed. Finaly, we can predict that these changes caused by the influence of Ni-doping can be used in most applications involving exciton polariton dispersion for photonics and optoelectronics devices.
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