Abstract
Recent advancements in thin-film growth techniques have opened doors for engineering innovative heterostructures with ultra-thin layers. These artificial superlattices hold promise for novel optoelectronic devices. However, a complete understanding of their properties is crucial for optimal design. In this study, we employ the full-potential linearized augmented plane wave (FP−LAPW) approach based on density functional theory (DFT) to engineer the optoelectronic properties of (HgSe)n/(ZnTe)n superlattices by controlling the number of layers (n) in SLs; The exchange-correlation potential was calculated by the generalized gradient GGA approximation and the optoelectronics properties has adjusted by the Tran-Blaha modified Becke-Johnson (TB−mBJ) correction of GGA approximation. Our findings shed light on the significant influence of stacking periodicity on the optoelectronic properties of HgTe/ZnTe SLs. We demonstrate that manipulating layer count is a viable strategy for engineering their optoelectronic characteristics. Additionally, the predicted near-infrared absorption makes these SLs promising candidates for near-infrared detector applications.
Published Version
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