Using the tight-binding Hamiltonian approach, we theoretically study the position of energy level structures and optical absorption peaks by applying stress forces laterally or longitudinally of triangular zigzag silicene nanodisks (TZSN). We consider the effect of strain on the structure. We found that by applying a lateral force similar to that applied to the stretched structure (the force applied to the compressed structure), all absorption peaks can be observed to move to the left or to the right as a whole in the optical absorption spectrum, and this shift is more pronounced at the main absorption peaks, indicating the possibility of TZSN as a strain sensor, and we also considered which size of TZSN would be more suitable as a sensor. On the other hand, it is found that the compressive strain can effectively reduce the light absorption intensity when the incident energy is less than 1.4 eV (0.89 µm). The work described in the system can be used as new material is applied to the sensor and imaging equipment, etc.
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