Optical Memory Research Articles

Assorted optical solitons of the (1+1)- and (2+1)-dimensional Chiral nonlinear Schrödinger equations using modified extended tanh-function technique

In this research article, the (1+1)- and (2+1)-dimensional Chiral nonlinear Schrödinger equations (CNLSEs) are studied, which play an important role in the development of quantum mechanics, particularly in the field of quantum Hall effect. Our primary goal is to obtain the analytical solutions utilizing novel methodology, particularly the modified extended tanh-function technique. We concentrate on the search to solitary wave solutions inside the (1+1)- and (2+1)-dimensional CNLSEs, which are relevant in domains such as optics, electro-magnetic wave propagation, plasma physics, optics and quantum mechanics. Our objective is to increase knowledge of this equation and give insight into the behavior of solitary waves by employing a novel mathematical technique. This will be accomplished by displaying our findings in 2D and 3D graphics. We believe that our results would pave a way for future research generating optical memories based on the nonlinear solitons.

Investigation on luminescence photoswitching stability in diarylethene-perovskite quantum dot hybrids.

Perovskite quantum dots (pQDs) have gathered a lot of attention because of their outstanding optoelectronic properties. Photoswitchable pQDs have the potential for application in single particle optical memories and bio-imaging. Hybrids of photochromic diarylethenes (DAE) and pQDs show a luminescence photoswitching property, however, the cycle stability in such systems is low because of photoinduced electron transfer (PET) from pQDs to DAE. In this study, various hybrids of DAEs and pQDs with different spacer lengths between the pQD donors and DAE acceptors were synthesized and their stability towards multiple cycles of luminescence photoswitching was evaluated. It was found that the electron transfer pathway can be blocked and very stable switchable hybrids can be produced when the distance between the donors and acceptors was long enough. Furthermore, the effect of softness of the basic ligands and the synthesis method of the pQDs on the cycle stability of the hybrids were investigated. The findings of this study suggest that the photoswitching stability can be improved in hybrid systems by proper molecular design of the photochromic molecule.

Highly responsive MoS2/MoO3 heterojunction based broadband photodetector

Broadband photodetection finds indispensable utility across a spectrum of applications, spanning optical communication, spectrum switching, and memory storage. In this work, we demonstrate the fabrication of a heterojunction-based broadband photodetector using visible-infrared activated molybdenum disulfide (MoS2) and ultraviolet-responsive molybdenum trioxide (MoO3). The MoO3-x thin films were grown at room temperature using DC sputtering techniques, and subsequent annealing at varied temperatures mitigated defects, increased crystallinity, and produced stoichiometric MoO3 thin films. Through the sulphurisation of MoO3 via the chemical vapour deposition (CVD) technique, a heterojunction of transition metal oxide/transition metal dichalcogenide between MoO3 and MoS2 is developed. The heterostructure device exhibits broad spectral responsivity, ranging from ultraviolet A to short-wave infrared regions. In particular, ultraviolet ray incidence yields a maximum responsivity of 0.34 A W−1, a minimum noise equivalent power of 1.36 × 10−11 W Hz−1/2, and a maximum quantum efficiency of 119 %. Conversely, under infrared ray illumination, the device achieves a peak responsivity of 13.85 A W−1, a minimum noise equivalent power of 2.89 × 10−13 W Hz−1/2, and the highest quantum efficiency of 1618 %. The ensuing investigations hold promise for advancing heterojunction-based broadband photodetection applications.

Speckle autocorrelation separation method based on frequency intensity for tracking moving object beyond optical memory effect

Abstract Imaging objects behind a scattering medium beyond the optical memory effect (OME) range is vital in various imaging scenarios. Despite numerous proposed imaging methods aimed at separating objects, effectively tracking moving objects remains challenging. In this paper, we present a non-invasive scattering imaging method to reconstruct target beyond the OME range and track moving objects using a speckle separation and position estimation technique. A speckle autocorrelation separation method based on frequency intensity is proposed to eliminate the noise from the cross-correlation and to separate the objects from the mixed speckles. A position estimation technique is proposed to determine the positional relationships of the objects using speckle deconvolution using the point spread function of imaging regions. A non-invasive imaging system is designed to track the moving object without prior knowledge of the shape and distribution of objects. Experimental validation shows the efficiency of the method for separation and localization, allowing for the reconstruction of the target behind the scattering medium and tracking of the moving object behind the scattering medium. Moreover, the method is capable of separating and tracking a moving object when multiple objects are in the background.

Effects of fluorine atom numbers on electrochromic properties of the benzothiadiazole-based D-A polymers

In this work, two fluorinated D-π-A-π-D type monomers, F-EDOT and FF-EDOT, were facilely synthesized by donor-acceptor-donor method via Stille coupling reaction, with monofluorinated benzothiadiazole and difluorinated benzothiadiazole as the acceptor units and 3,4-ethylenedioxythiophene (EDOT) as the donor units. The electrochemical polymerization behavior of the fluorinated monomers, electrochemical and electrochromic properties of the corresponding fluorinated D-A polymers were compared to study the effects of different fluorine atom numbers on the optoelectronic properties of the monomers and their resultant D-A polymers. The results show that the introduction of more F atoms into the conjugated backbone increases the oxidation potential of monomers, both of them have low initial oxidation potential (0.65 V/0.70 V). As in the case of monomers, the substitution of more F atoms also leads to the decreased HOMO energy level of the polymers, thus leading to the increased band gap energy of P(FF-EDOT) (1.39 eV). This result can be attributed to the deviation of planarity and the reduced effective conjugate length. As prepared fluorinated D-A polymers also have good adhesion on the electrode surface, favorable redox activity, and outstanding redox stability (the redox activity of P(F-EDOT) remains 99 % after 1000 cycles). At the same time, the fluorinated D-A polymers also show distinguish electrochromic properties under various external potentials; both the optical contrast and coloration efficiency decreased with the increase of F atom numbers, and the corresponding response time increased. As a result, both the fluorinated D-A polymers show light green in the neutral state, P(F-EDOT) shows more obvious electrochromic performance in the near infrared region (optical contrast: 35.02 %, coloration efficiency: 159.94 cm2 C−1, and quick response time: 0.2 s), accompanied with excellent discoloration stability and optical memory effect. The study of novel fluorinated-based electrochromic materials further expands the selection of acceptor units and the application prospect of electrochromic materials.

Novel donor-acceptor-donor type electrochromic polymers based on 1,3-indandione modified triphenylamine derivatives as new acceptor units

Two donor (D)-acceptor (A)-donor (D) type of conjugated monomers, ITPA and ICTPA, consisted of 1H-indene-1,3(2H)-dione (IN)- or 2-(3-oxo-2,3-dihydroinden-1-ylidene)-malononitrile (INCN)-substituted triphenylamine as the acceptor unit, were synthesized by Stille coupling reaction and Knovenagel condensation reaction, and their corresponding polymers (PITPA and PICTPA) were prepared by electrochemical polymerization. Both ITPA and ICTPA hade low initial oxidation potential of 0.70 V and 0.76 V, respectively, which was conducive to achieve high-quality polymer films. In comparison with FTPA which was not substituted by IN unit, ITPA and ICTPA exhibited the distinct red-shifted and dual absorption bands due to the stronger electron-withdrawing ability of IN and INIC units. Moreover, the electrochromic results demonstrated that PITPA possessed much higher optical contrast of 41 %, higher coloration efficiency (CE) of 445.5 cm2 C−1 at 1100 nm with extremely fast response time as low as 0.3 s, and a promising optical memory behavior compared with its counterpart without IN unit. These results suggested that the introduction of IN unit into triphenylamine could improve the electrochromic performance of the conjugated polymers and also provide a new strategy to develop novel and high-performance electrocheomic polymers.

Self-Healable, Transparent, Biodegradable, and Shape Memorable Polyurethanes Derived from Carbon Dioxide-Based Diols.

A series of CO2-based thermoplastic polyurethanes (TPUs) were prepared using CO2-based poly(polycarbonate) diol (PPCDL), 4,4'-methylenebis (cyclohexyl isocyanate) (HMDI), and polypropylene glycol (PPG and 1,4-butanediol (BDO) as the raw materials. The mechanical, thermal, optical, and barrier properties shape memory behaviors, while biocompatibility and degradation behaviors of the CO2-based TPUs are also systematically investigated. All the synthesized TPUs are highly transparent amorphous polymers, with one glass transition temperature at ~15-45 °C varying with hard segment content and soft segment composition. When PPG is incorporated into the soft segments, the resultant TPUs exhibit excellent self-healing and shape memory performances with the average shape fixity ratio and shape recovery ratio as high as 98.9% and 88.3%, respectively. Furthermore, the CO2-based TPUs also show superior water vapor permeability resistance, good biocompatibility, and good biodegradation properties, demonstrating their pretty competitive potential in the polyurethane industry applications.

Electro-Optically Configurable Synaptic Transistors With Cluster-Induced Photoactive Dielectric Layer for Visual Simulation and Biomotor Stimuli.

The integration of visual simulation and biorehabilitation devices promises great applications for sustainable electronics, on-demand integration and neuroscience. However, achieving a multifunctional synergistic biomimetic system with tunable optoelectronic properties at the individual device level remains a challenge. Here, an electro-optically configurable transistor employing conjugated-polymer as semiconductor layer and an insulating polymer (poly(1,8-octanediol-co-citrate) (POC)) with clusterization-triggered photoactive properties as dielectric layer is shown. These devices realize adeptly transition from electrical to optical synapses, featuring multiwavelength and multilevel optical synaptic memory properties exceeding 3 bits. Utilizing enhanced optical memory, the images learning and memory function for visual simulation are achieved. Benefiting from rapid electrical response akin to biological muscle activation, increased actuation occurs under increased stimulus frequency of gate voltage. Additionally, the transistor on POC substrate can be effectively degraded in NaOH solution due to degradation of POC. Pioneeringly, the electro-optically configurability stems from light absorption and photoluminescence of the aggregation cluster in POC layer after 200°C annealing. The enhancement of optical synaptic plasticity and integration of motion-activation functions within a single device opens new avenues at the intersection of optoelectronics, synaptic computing, and bioengineering.

Optically Delaying a Radio Frequency–Linear Frequency-Modulated (RF-LFM) Pulse Using Kerr Comb Carriers and Off-the-Shelf Concatenation of a Linearly Chirped Fiber Bragg Grating and a Chirped-and-Sampled Fiber Bragg Grating

We demonstrate a low latency delay of a radio frequency (RF)–linear frequency-modulated (LFM) pulse by modulating it onto optical carriers from a Kerr comb and sending the signal through a concatenation of off-the-shelf linearly chirped fiber Bragg gratings (LC-FBGs) and chirped-and-sampled FBG (CS-FBG). We characterize the frequency response and latency of the LC-FBG and CS-FBG. Then, experimentally, the LFM pulse performance is characterized by measuring the peak sidelobe level (PSL) at the output of the tunable delay system. The experiment, performed with an LFM pulse of 1 GHz bandwidth at a 10 GHz center frequency, shows a PSL better than 34.4 dB, attesting to the high quality of the buffer RF transfer function. Thus, the proposed optical memory buffer architecture, utilizing compact devices based on a Kerr comb and FBGs, offers several benefits for delaying LFM pulses, including (i) a larger tunable delay range, (ii) low latency, (iii) wide bandwidth, and (iv) high PSL.

Employing the DFT engineering to tune the optoelectronic properties and mechanical performance of Europium-doped Barium Magnesium Silicate (BMS): a comparative study using HSE06 and GGA+U+SO functionals

With exceptional opto-electronic properties, BaMgSiO4 (BMS) is a valuable candidate for inorganic photochromatic materials. The host matrix BMS’s applications in high density optical memory, smart windows, photo switches, and LEDs have drawn the interest of researchers all over the world. So, the WIEN2k Package was employed to compute the optoelectronic properties of BaMgSiO4 and Ba1-xEuxMgSiO4. The electronic characteristics at the Ba/Eu sites of Ba1-xEuxMgSiO4 were investigated using the Full Potential Linearized Augmented Plane-Wave technique (FP-LAPW). Modern exchange and correlation potentials, namely the Heyd-Scuceria-Ernserhof (HSE06) and the GGA+U+SO potential, were employed to accurately describe the band structure and band gaps of the alloys. The parental material are identified as p-type semiconductors while the Eu doped materials as p-type semiconductors with gap energies of 4.147 and 3.172 (5.683 and 3.501) for BMS and BMS:Eu using GGA+U+SO (HSE06), respectively, are observed. The study included assessments of structural stabilities and mechanical optimization, with the obtained results precisely matching experimental outcomes. The BMS and Eu doped BMS material exhibit stable and ductile characteristics, as confirmed by the acquired elastic data, indicating rigid structures.

Thermally tuned on-chip optical memory

Phase-change materials, known as Chalcogenide alloys, are a promising alternative to traditional random-access memory. They possess characteristics that are particularly beneficial for non-volatile storage applications. The features of the Phase change material Ge-Sb-Te alloy (GST) used for substrate-integrated optical memory include scaling, quick switching times, minimal switching energy, and exceptional thermal stability. The material has two tuneable states, amorphous and crystalline, with the amorphous layer for loading data optically. In contrast, the crystalline state holds the data longer without significant loss. The study designed a classic thermally tuned optical memory on a silicon substrate. It demonstrated a dependency of lattice structure on external voltage and revealed a large storage capacity for information in the form of an optical signal. The heat transport simulation utilized the Heat Transport (HEAT) solver of the Finite Element Eigenmode (FEEM) solver. At the same time, the optical response analysis involved the Finite Difference Time Domain (FDTD) solver of Lumerical. The proposed structure exhibits a memory-switching phenomenon when a temperature shift of about 60 °C from room temperature is induced by a change in the external voltage of 147 mV. These findings have substantial implications for non-volatile storage memory development, providing a potential solution for high-capacity, low-energy data storage.

Ultralong Bistable, Electrolytic MnO2-Based, Electrochromic Battery Enabled by Porous, Low-Barrier, Hydroxylated TiO2 Interface.

Electrochromic (EC)battery technology shows great potential in future "zero-energy building" by controlling outdoor solar transmission to tune heat gain as well as storing the consumed energy to reuse across other building systems. However, challenges still exist in exploring an electrochemical system to satisfy requirements on both ultra-long optical memory (also called bistability) without continuous power supply and high energy density. Herein, an ECbattery is proposed to demonstrate ultra-long bistability (>760h) based on the reversible deposition and dissolution of manganese oxide (MnO2) without the addition of any mediators. A porous low-barrier hydroxylated titanium dioxide (TiO2) interface is incorporated to synergistically enrich Mn2+-affinity active sites for deposition and effectively reduce the electron transport barrier of MnO2 for dissolution, thereby significantly improving the reversibility, high optical modulation (60.2% at 400nm), and energy density (352mAhm-2). The modification strategy is also verified on the cathode-less button cells with a much higher average coulombic efficiency (99.9%) compared to the batteries without the porous hydroxylated TiO2 interface (74.6%). These achievements lay a foundation for advancements in both electrochromism and Zn-Mn aqueous batteries.

High-contrast electrochromic coatings and devices for health assurance, visual comfort and energy-saving in buildings

High-contrast electrochromic coatings and devices reduce the ultraviolet-radiation from sunlight, ensure human health and visual comfort, save the electricity consumption of the heater in winter, and save electricity consumption of air conditioners in summer. Anodically coloring polymer coatings (P(CDBP), P(CDBP-co-BTPH), P(CDBP-co-TFU), P(CDBP-co-CDT) and P(CDBP-co-CDTK)) based on 4,4′-bis(carbazol-9-yl)-2,2′-dimethylbiphenyl (CDBP) and four different dithiophene derivatives (2,2′-bithiophene (BTPH), 2-(2-thienyl)furan (TFU), 4H-cyclopenta[2,1-b:3,4-b’]dithiophene (CDT), and cyclopentadithiophene ketone (CDTK)) are polymerized electrochemically on ITO electrode. The P(CDBP-co-BTPH) electrochromic coating has high transmittance change (ΔT = 71.1 %) and coloration efficiency (160.6 cm2 C−1). P(CDBP-co-BTPH) film reveals yellow-gray and dark blue in neutral and oxidation states, respectively. Electrochromic energy saving devices (ECDs) are assembled using P(CDBP), P(CDBP-co-BTPH), P(CDBP-co-TFU), P(CDBP-co-CDT) and P(CDBP-co-CDTK) films as the anodic layers and poly(3,4-(2,2-dimethylpropylenedioxy)thiophene) (PPD-M2) film as the cathodic layer. P(CDBP-co-BTPH)/PPD-M2 ECD shows a high transmittance change (ΔT = 30.3 %) and a rapid response time (≤0.3 s). Moreover, P(CDBP-co-BTPH)/PPD-M2 ECD also has sufficient optical memory and redox cycling stability. These findings provide us new insights for the useful design of polymer coatings in rapid switching electrochromic energy-saving devices and switchable architectural windows.

First-principles investigation of near-field energy transfer between localized quantum emitters in solids

We present a predictive and general approach to investigate near-field energy transfer processes between localized defects in semiconductors, which couples first-principles electronic structure calculations and a nonrelativistic quantum electrodynamics description of photons in the weak-coupling regime. The approach is general and can be readily applied to investigate broad classes of defects in solids. We apply our approach to investigate an exemplar point defect in an oxide, the F center in MgO, and we show that the energy transfer from a magnetic source, e.g., a rare-earth impurity, to the vacancy can lead to spin nonconserving long-lived excitations that are dominant processes in the near field, at distances relevant to the design of photonic devices and ultrahigh dense memories. We also define a descriptor for coherent energy transfer to predict geometrical configurations of emitters to enable long-lived excitations, that are useful to design optical memories in semiconductor and insulators. Published by the American Physical Society 2024

Potential for multi-application advancements from doping zirconium (Zr) for improved optical, electrical, and resistive memory properties of zinc oxide (ZnO) thin films

Transition metal-doped Zinc oxide (ZnO) thin films with an optimal wide band gap and semiconducting nature find numerous applications in optoelectronic devices, gas sensors, spintronic devices, and electronics. In this study, Zirconium (Zr) doped ZnO thin films were deposited on ITO (Indium Tin oxide) coated glass substrate using RF-magnetron sputtering. Optical and electrical properties were examined for their potential use in resistive random-access memory (RRAM) applications. X-ray Diffraction (XRD), UV–vis spectroscopy, x-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM) and Scanning electron microscopy (SEM) were used to investigate structural, optical, and compositional properties and roughness respectively. The results demonstrate that the films possess crystalline properties. Additionally, an augmentation in Zr concentration correlates with an elevation in the optical band gap, ascending from 3.226 eV to 3.26 eV, accompanied by an increase in Urbach energy from 0.0826 eV to 0.1234 eV. The film with the highest Zr content among all the films demonstrated the best electrical performance for resistive memory applications. Incorporating Zr as a dopant shows enhancement in the electrical performance and such ZnO films with optimum concertation of Zr can potentially be used in RRAM. ZnO being a versatile host material, its doping with Zr may extend its applications in catalysis, gas sensing, energy storage, and biomedical engineering. ZnO thin films employ zirconium (Zr) as a dopant, which is a novel way to improve the material’s characteristics. Although ZnO has been thoroughly researched, adding Zr presents a novel technique to enhance optical, electrical, and resistive memory characteristics all at once that has not been fully investigated.

Machine-learning optimal control pulses in an optical quantum memory experiment

Machine-learning optimal control pulses in an optical quantum memory experiment

Optical investigations of coherence and relaxation dynamics of a thulium-doped yttrium gallium garnet crystal at sub-kelvin temperatures for optical quantum memory

Optical investigations of coherence and relaxation dynamics of a thulium-doped yttrium gallium garnet crystal at sub-kelvin temperatures for optical quantum memory

Realization of spinful metaphotonic stokes skyrmions

Abstract Topologically protected skyrmion textures of light have garnered significant attention due to their potential applications in next-generation high-density data storage and logic devices. However, achieving compact and tunable on-chip skyrmion modes remains a formidable challenge. In this work, we present a novel approach empowered by birefringent metasurfaces to generate and manipulate spin-multiplexed photonic skyrmion textures. By encoding independent phase profiles onto orthogonal spin states, we observe the emergence of anti-skyrmions and skyrmioniums via Stokes parameter measurements, elucidating their distinct topological characteristics. This spin-multiplexed metasurface platform not only facilitates high-dimensional multiplexing but also enables the miniaturization of topological quasi-particles, offering promising prospects for applications in optical memory, information processing, and communications.

Design and simulation of non linear metamaterial for full efficient nano structure optical spatial RAM memory detection sensing at mid infrared region

Design and simulation of non linear metamaterial for full efficient nano structure optical spatial RAM memory detection sensing at mid infrared region

An Ultrafast Multibit Memory Based on the ReS2/h-BN/Graphene Heterostructure.

The exponential growth of data in the big data era has made it imperative to improve the data storage density and calculation speed. Therefore, the development of a multibit memory with an ultrafast operational speed is of great significance. In this work, a floating-gate (FG) memory based on the ReS2/h-BN/graphene van der Waals heterostructure is reported. The device exhibits ultrafast and multilevel nonvolatile memory characteristics, notably featuring an exceptionally large memory window of 113.36 V, a substantial erasing/programming current ratio of 107, an ultrafast operational speed of 30 ns, outstanding endurance exceeding 1000 cycles, and retention performance exceeding 1100 s. Furthermore, the device exhibits both electrically and optically tunable multilevel nonvolatile memory behavior. By controlling the voltage and light pulse parameters, the device achieves an electrical memory state of 130 levels (>7 bits) and an optical memory state of 45 levels (>5 bits).