Potential for Multi-Application Advancements from Doping Zirconium (Zr) for Improved Optical, Electrical, and Resistive Memory Properties of Zinc Oxide (ZnO) Thin Films

Abstract

Abstract Transition metal-doped Zinc oxide (ZnO) thin films with an optimal wide band gap and semiconducting nature find numerous applications in optoelectronic devices, gas sensors, spintronic devices, and electronics. In this study, Zirconium (Zr) doped ZnO thin films were deposited on ITO (Indium Tin oxide) coated glass substrate using RF-magnetron sputtering. Optical and electrical properties were examined for their potential use in resistive random-access memory (RRAM) applications. X-ray Diffraction (XRD), UV-VIS spectroscopy, X-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM) and Scanning electron microscopy (SEM) were used to investigate structural, optical, and compositional properties and roughness respectively. The results demonstrate that the films possess crystalline properties. 
Additionally, an augmentation in Zr concentration correlates with an elevation in the optical band gap, ascending from 3.226 eV to 3.26 eV, accompanied by an increase in Urbach energy from 0.0826 eV to 0.1234 eV. The film with the highest Zr content among all the films demonstrated the best electrical performance for resistive memory applications. Incorporating Zr as a dopant shows enhancement in the electrical performance and such ZnO films with optimum concertation of Zr can potentially be used in RRAM. ZnO being a versatile host material, its doping with Zr may extend its applications in catalysis, gas sensing, energy storage, and biomedical engineering. ZnO thin films employ zirconium (Zr) as a dopant, which is a novel way to improve the material's characteristics. Although ZnO has been thoroughly researched, adding Zr presents a novel technique to enhance optical, electrical, and resistive memory characteristics all at once that has not been fully investigated.