Highly responsive MoS2/MoO3 heterojunction based broadband photodetector

Abstract

Broadband photodetection finds indispensable utility across a spectrum of applications, spanning optical communication, spectrum switching, and memory storage. In this work, we demonstrate the fabrication of a heterojunction-based broadband photodetector using visible-infrared activated molybdenum disulfide (MoS2) and ultraviolet-responsive molybdenum trioxide (MoO3). The MoO3-x thin films were grown at room temperature using DC sputtering techniques, and subsequent annealing at varied temperatures mitigated defects, increased crystallinity, and produced stoichiometric MoO3 thin films. Through the sulphurisation of MoO3 via the chemical vapour deposition (CVD) technique, a heterojunction of transition metal oxide/transition metal dichalcogenide between MoO3 and MoS2 is developed. The heterostructure device exhibits broad spectral responsivity, ranging from ultraviolet A to short-wave infrared regions. In particular, ultraviolet ray incidence yields a maximum responsivity of 0.34 A W−1, a minimum noise equivalent power of 1.36 × 10−11 W Hz−1/2, and a maximum quantum efficiency of 119 %. Conversely, under infrared ray illumination, the device achieves a peak responsivity of 13.85 A W−1, a minimum noise equivalent power of 2.89 × 10−13 W Hz−1/2, and the highest quantum efficiency of 1618 %. The ensuing investigations hold promise for advancing heterojunction-based broadband photodetection applications.