Open Voltage Research Articles

Design and analysis of a novel resistorless frequency selective network for low voltage operation

Design and analysis of a novel resistorless frequency selective network for low voltage operation

Achieving High-Performance Na3V2(PO4)2F3 Cathode Material through a Bifunctional N-Doped Carbon Network.

Na3V2(PO4)2F3 (NVPF) is emerging as a popular cathode for sodium-ion batteries owing to its stable structure, high operating voltage, and large energy density. However, its practical application is hindered by its low conductivity. In addition, due to the loss of fluorine during synthesis, Na3V2(PO4)3 (NVP) impurity is often easily generated, resulting in a decrease in actual operating voltage. Herein, a bifunctional carbon network composed of an N-doped carbon layer and carbon bridge is constructed around NVPF particles. Through pyrolysis of polydopamine (PDA), the NVPF particles are covered in situ by an N-doped carbon layer, and the carbon bridge generated by polytetrafluoroethylene (PTFE) is also coated with N-doped carbon. Besides, PTFE also serves as a fluorine supplement to ensure that pure NVPF is obtained. As a result, the bifunctional N-doped carbon network-modified NVPF delivers a high reversible capacity (125.7 mA h g-1 at 0.2 C) and appreciable cycle stability (92.7% at 1 C over 300 cycles, and 89.8% at 10 C over 1500 cycles). When assembled into a full cell with a commercial hard carbon anode, it displays a discharge median voltage of up to 3.62 V at 0.2 C. Furthermore, it achieves a high energy density of 373.7 W h kg-1 at a power density of 461.2 W kg-1, with an excellent specific energy retention of 78.2% after 200 cycles. Therefore, this modification method is expected to be extended to other fluorine-containing materials with poor electrical conductivity.

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects.

Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor memories. However, a fundamental challenge that persists is the lack of understanding regarding dimensional scaling, including thickness scaling and area scaling, of the functional properties and their heterogeneity in these films. In this work, excellent ferroelectricity and switching endurance are demonstrated in 4 nm-thick Hf0.5Zr0.5O2 (HZO) capacitors with molybdenum electrodes in capacitors as small as 65 nm × 45 nm in size. The HZO layer in these capacitors can be crystallized into the ferroelectric orthorhombic phase at the low temperature of 400 °C, making them compatible for back-end-of-line (BEOL) FE memories. With the benefits of thickness scaling, low operation voltage (1.2 V) is achieved with high endurance (>1010 cycles); however, a significant fatigue regime is noted. We observed that the bottom electrode, rather than the top electrode, plays a dominant role in the thickness scaling of HZO ferroelectric behavior. Furthermore, ultrahigh switched polarization (remanent polarization 2Pr ∼ 108 μC cm-2) is observed in some nanoscale devices. This study advances the understanding of dimensional scaling effects in HZO capacitors for high-performance FE memories.

Dilute aqueous hybrid electrolyte endows a high-voltage window for supercapacitors

Developing aqueous electrolyte with wide electrochemical stability window (ESW) is one of the key technologies to boosting the energy density of aqueous electrochemical double-layer capacitors (EDLCs). However, expanding the ESW using super-concentrated electrolytes comes at the expense of cost, ionic conductivity and the mass density of the device. Herein, we selected a cost-effective and environmentally friendly molecular crowding agent, polyethylene glycol dimethyl ether (PEGDME-250), as the electrolyte additive designed to achieve high ESW at low salt concentrations. First, PEGDME can reduces the activity of water and increases the ESW of the electrolyte by forming hydrogen bonds with free water molecule. In addition, PEGDME does not have the interaction between terminal groups compared to conventional polyethylene glycols (PEG), which helps to reduce the viscosity and improve the ionic conductivity of the electrolyte. By adjusting the composition of the electrolyte, the optimal electrolyte with a high ESW of 2.96 V was achieved with the formula of 3 m NaClO4-25 % H2O-75 % PEGDME. The EDLCs assembled with this diluted aqueous electrolyte and YP-50 F electrodes presents a high operational voltage window of 2.4 V and outstanding cycle stability (>10000 cycles), and maintains excellent rate performance in a temperature range of −10–35 ℃.

Selective phosphate removal with manganese oxide composite anion exchange membranes in membrane capacitive deionization

The discharge of excessive phosphorous into water bodies can lead to serious eutrophication threatening aquatic ecosystem. Membrane capacitive deionization (MCDI) is an effective platform for deionizing aqueous streams; however, conventional MCDI is unable to selectively remove targeted ions from a liquid mixture. In this work, we fabricated manganese oxide composite anion exchange membranes (AEMs) for MCDI to enhance phosphate removal selectivity from sodium chloride-sodium dihydrogen phosphate (10:1 M ratio) aqueous mixtures. We systematically investigated several critical factors, such as constant current or voltage operation, applied voltage amount, process stream pH, and manganese oxide (Mn2O3) content in the AEM, on phosphate removal efficiency and phosphate selectivity. A trade-off was observed between phosphate removal and selectivity when increasing the cell voltage. Under the best conditions, a MCDI unit with a 20 wt% Mn2O3 composite AEM and a bipolar membrane facilitated high phosphate removal efficiency of ≥ 31.8 % and a phosphate over chloride selectivity of 1.1 while showing stability for at least 30 cycles. To help understand how Mn2O3 composite AEM boosts phosphate selectivity, static electronic structure calculations were performed, and they revelated that hydrogen phosphate absorption on Mn2O3 composite AEM was 314 kcal/mol more exothermic than that on pristine AEM while chloride adsorption on Mn2O3 composite AEM was 2.2 kcal/mol less exothermic than that on a pristine AEM. Overall, this work presents an effective strategy for selectively removing phosphate from model wastewater solutions and the mechanistic understanding that governs ion selectivity in composite ion-exchange membranes used in MCDI.

In-situ homeotropic alignment of dye doped liquid crystal molecules on multilayered self assembled nanoparticles in confined cells for next generation display devices

The in-situ homeotropic alignment (HA) of pure liquid crystal (LC) and dye doped LC molecules was prepared on the multilayered self assembled silica nanoparticles (SNPs) deposited on the substrates in a confined empty ITO cell. The LC and azo dye mixtures with (0.0625–0.5 wt%) concentrations show the uniform in-situ HA of nematic LC (NLC) over SNPs coated surface. The surface morphology with mapping of elements and functionality of the SNPs coated ITO glass substrate were confirmed by “field emission scanning electron microscope (FESEM)” and “X-ray photoelectron spectroscopy (XPS)”. Polarized optical microscopic textures and conoscopic view of pure and dye doped LC mixtures in SNPs coated confined cells, confirmed the HA of LC molecules and exhibited the uniform black textures under crossed polarizers. The electro-optic behaviour of dye doped homeotropically aligned LC (HALC) cells was compared to pure SNPs coated HALC cell. The results showed that on increasing the azo dye concentration (0.0625–0.25 wt%), the threshold (Vth) and operating (Vo) voltages were found decreased. However, on further increase of dye concentration to 0.5 wt%, Vth and Vo were observed relatively increased. The contrast ratio (CR) was found improved in dye doped HALCs with maximum CR at lowest dye concentration (0.0625 wt%). The UV results exhibit higher absorbance of the dye doped HALC cells with increasing the dye concentration. Also, the band gap values showed that the addition of even small amount of dye, it reduced the value of band gap in HALC cell.

Microwave-assisted synthesis of dual-functional NiSe2@NC nanocomposites for advanced power-type and energy-type storage devices

The battery-supercapacitor hybrid energy storage system, composed of energy-type and power-type storage devices, is essential to improve energy storage systems' comprehensive performance and economy significantly. The current research uses a convenient and economical microwave-assisted heating method to describe the preparation of NiSe2@NC nanocomposites with a core-shell carbon encapsulation structure. When used as an electrode material for power-type storage devices (Supercapacitors, SCs), the optimized NiSe2@NC-1-3 can achieve 555.7 F g−1 at 0.5 A g−1. The assembled asymmetric NiSe2@NC//AC has a wide operating voltage of 1.6 V and maintains 92.73 % durability after 10,000 cycles. For energy-type storage devices (Sodium-ion battery, SIBs) from the NiSe2@NC-1-3 electrode material exhibits a capacity of 384.4 mAh g−1 at 0.1 A g−1, a good rate capability (298.8 mAh g−1 at 5.0 A g−1), and excellent cycling life (311.7 mAh g−1 at 1.0 A g−1 for 1200 cycles). Considering the exceptional electrochemical performance of the NiSe2@NC nanocomposite in both power-type and energy-type storage devices, the rational design of this work will provide a new sight for the construction of a battery-supercapacitor hybrid energy storage system which will accelerate the rapid development of the world's energy storage.

The optical properties of ZnO/ZnS:Mn core–shell nanorods prepared on GaN substrates

ZnO/ZnS:Mn/GaN core–shell nanorods device was obtained by depositing ZnO/ZnS:Mn core–shell nanorods on GaN substrate using pulsed laser deposition and hydrothermal method. The optical properties of the device were studied. The PL spectrum of ZnO/ZnS:Mn/GaN consists of four emission bands located at 375, 450, 530 and 590 nm. The forward opening voltage is about 6 V. Under forward bias, there are two luminescence bands located at 415 and 610 nm, and the intensity increases with the increase of forward voltage. The color coordinates of EL spectra are very close to standard white light, indicating that the device has potential application in white light LED. Compared to ZnO/GaN nanorods device, the white light quality of ZnO/ZnS:Mn/GaN core–shell nanorods device is better, and it is more suitable as a long-term light source.

Pressure-driven molecule implantation enabling ultrahigh-rate and ultralong-life zinc ion batteries

Durable cathode materials with high specific capacity are essential for aqueous zinc ion batteries (AZIBs). However, vanadium-based materials endure irreversible structural collapse, sluggish diffusion kinetics, and low working voltage. In this study, we propose a unique pressure-driven molecule implantation (PMI) strategy to fabricate a laminar organic–inorganic hybrid cathode (PMI-VO) for AZIBs by coupling polyaniline (PANI) with vanadium oxide. The bipolar protonation of implanted electroactive PANI provides abundant active sites for ion/electron transfer and Zn2+/H+ storage in PMI-VO. Importantly, the formed C-V-O interfacial coupling bonds in the cycling process effectively relieve the intercalation stress and strengthen the redox kinetics and structural integrity of V2O5. In situ infrared spectroscopy and theoretical calculations reveal the PMI-induced multiple ions storage mechanisms in the PMI-VO cathode. Accordingly, PMI-VO cathode performs a superior specific capacity of 522 mAh∙g−1 at 0.2 A∙g−1, a high operating voltage of 0.86 V, a high energy density (387.4 Wh∙kg−1), and splendid long-life stability (over 15,000 cycles at 20 A∙g−1 with 191 mAh∙g−1). Therefore, this pressure-driven molecule implantation strategy provides a pioneering method to fabricate superior cathode materials of advanced AZIBs.

Insight into Facile Ion Diffusion in Resistive Switching Medium toward Low Operating Voltage Memory.

The rapid increase in data storage worldwide demands a substantial amount of energy consumption annually. Studies looking at low power consumption accompanied by high-performance memory are essential for next-generation memory. Here, Graphdiyne oxide (GDYO), characterized by facile resistive switching behavior, is systematically reported toward a low switching voltage memristor. The intrinsic large, homogeneous pore-size structure in GDYO facilitates ion diffusion processes, effectively suppressing the operating voltage. The theoretical approach highlights the remarkably low diffusion energy of the Ag ion (0.11 eV) and oxygen functional group (0.6 eV) within three layers of GDYO. The Ag/GDYO/Au memristor exhibits an ultralow operating voltage of 0.25 V with a GDYO thickness of 5 nm; meanwhile, the thicker GDYO of 29 nm presents multilevel memory with an ON/OFF ratio of up to 104. The findings shed light on memory resistive switching behavior, facilitating future improvements in GDYO-based devices toward opto-memristors, artificial synapses, and neuromorphic applications.

Scalable Precise Nanofilm Coating and Gradient Al Doping Enable Stable Battery Cycling of LiCoO2 at 4.7 V

AbstractThe quest for smart electronics with higher energy densities has intensified the development of high‐voltage LiCoO2 (LCO). Despite their potential, LCO materials operating at 4.7 V faces critical challenges, including interface degradation and structural collapse. Herein, we propose a collective surface architecture through precise nanofilm coating and doping that combines an ultra‐thin LiAlO2 coating layer and gradient doping of Al. This architecture not only mitigates side reactions, but also improves the Li+ migration kinetics on the LCO surface. Meanwhile, gradient doping of Al inhibited the severe lattice distortion caused by the irreversible phase transition of O3−H1−3−O1, thereby enhanced the electrochemical stability of LCO during 4.7 V cycling. DFT calculations further revealed that our approach significantly boosts the electronic conductivity. As a result, the modified LCO exhibited an outstanding reversible capacity of 230 mAh g−1 at 4.7 V, which is approximately 28 % higher than the conventional capacity at 4.5 V. To demonstrate their practical application, our cathode structure shows improved stability in full pouch cell configuration under high operating voltage. LCO exhibited an excellent cycling stability, retaining 82.33 % after 1000 cycles at 4.5 V. This multifunctional surface modification strategy offers a viable pathway for the practical application of LCO materials, setting a new standard for the development of high‐energy‐density and long‐lasting electrode materials.

Scalable Precise Nanofilm Coating and Gradient Al Doping Enable Stable Battery Cycling of LiCoO2 at 4.7 V.

The quest for smart electronics with higher energy densities has intensified the development of high-voltage LiCoO2 (LCO). Despite their potential, LCO materials operating at 4.7 V faces critical challenges, including interface degradation and structural collapse. Herein, we propose a collective surface architecture through precise nanofilm coating and doping that combines an ultra-thin LiAlO2 coating layer and gradient doping of Al. This architecture not only mitigates side reactions, but also improves the Li+ migration kinetics on the LCO surface. Meanwhile, gradient doping of Al inhibited the severe lattice distortion caused by the irreversible phase transition of O3-H1-3-O1, thereby enhanced the electrochemical stability of LCO during 4.7 V cycling. DFT calculations further revealed that our approach significantly boosts the electronic conductivity. As a result, the modified LCO exhibited an outstanding reversible capacity of 230 mAh g-1 at 4.7 V, which is approximately 28 % higher than the conventional capacity at 4.5 V. To demonstrate their practical application, our cathode structure shows improved stability in full pouch cell configuration under high operating voltage. LCO exhibited an excellent cycling stability, retaining 82.33 % after 1000 cycles at 4.5 V. This multifunctional surface modification strategy offers a viable pathway for the practical application of LCO materials, setting a new standard for the development of high-energy-density and long-lasting electrode materials.

Water/N,N-Dimethylacetamide-Based Hybrid Electrolyte and Its Application to Enhanced Voltage Electrochemical Capacitors

The growing interest in hybrid (aqueous–organic) electrolytes for electrochemical energy storage is due to their wide stability window, improved safety, and ease of assembly that does not require a moisture-free atmosphere. When it comes to applications in electrochemical capacitors, hybrid electrolytes are expected to fill the gap between high-voltage organic systems and their high discharge rate aqueous counterparts. This article discusses the potential applicability of aqueous–organic electrolytes utilizing water/N,N-dimethylacetamide (DMAc) solvent mixture, and sodium perchlorate as a source of charge carriers. The hydrogen bond formation between H2O and DMAc (mole fraction xDMAc = 0.16) is shown to regulate the original water and cation solvation structure, thus reducing the electrochemical activity of the primary aqueous solution both in the hydrogen (HER) and oxygen (OER) evolution reactions region. As a result, an electrochemical stability window of 3.0 V can be achieved on titanium electrodes while providing reasonable ionic conductivity of 39 mS cm−1 along with the electrolyte’s flame retardant and anti-freezing properties. Based on the diagnostic electrochemical studies, the operation conditions for carbon/carbon capacitors have been carefully optimized to adjust the potential ranges of the individual electrodes to the electrochemical stability region. The system with the appropriate electrode mass ratio (m+/m− = 1.51) was characterized by a wide operating voltage of 2.0 V, gravimetric energy of 13.2 Wh kg−1, and practically a 100% capacitance retention after 10,000 charge–discharge cycles. This translates to a significant rise in the maximum energy of 76% when compared to the aqueous counterpart. Additionally, reasonable charge–discharge rates and anti-freeze properties of the developed electrolyte enable application in a broad temperature range down to −20 °C, which is demonstrated as well.

Integration of membrane bioreactor with a weak electric field: Mitigating membrane fouling and improving effluent quality targeting low energy consumption

The electrical assisted MBR (EMBR) has been employed to improve the water quality and solve the fouling problem. However, advanced material-based electrodes or high operation voltage bring difficulties for the practical application of EMBR. Herein, a weak electric field generated by titanium electrodes was employed to establish an EMBR and the fouling mechanism was investigated in detail. The results showed that introduction of a weak electric field at voltage of 0.1 V/cm and current density of 7 μA/cm2 efficiently decreased the extracellular polymeric substances (EPS) content by over 40 % as such extended the service time of MBR by more than 20 %. Specifically, the weak electric field reduced the relative abundance of Bacteroidetes, known for secreting proteinaceous EPS, by 38.61 %, and increased relative abundance of Patescibacteria with EPS decomposition by 6.73 times, thus effectively reducing the EPS concentration. Further KEGG pathway analysis revealed that electric field accelerated enzymatic reactions and promoted microbial metabolism of carbohydrate and amino acid. Furthermore, this weak field reduced the sludge deposition on membrane by increase of the electrostatic repulsion and the irreversible fouling was mediated. According to the composition of the fouling layer, a corresponding cleaning scheme was applied. This EMBR consistently produced high-quality effluent in all cycles, with 99.31 % COD, 98.73 % NH4+-N, 85.87 % TP and 92.66 % TN removals. In conclusion, the weak electric field endow EMBR exceptional anti-fouling ability and superior effluent quality under lower energy consumption.

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Al alloying/doping in HfO2-based resistive random-access memory (RRAM) has been proven to be an effective method for improving the low-resistance state (LRS) retention. However, a detailed understanding of Al concentration on oxygen vacancy migration and resistive switching (RS) behaviors still needs to be included. Herein, the impact of Al concentration on the RS properties of the TiN/Ti/HfAlO/TiN RRAM devices is addressed. Firstly, it is found that the forming voltage, SET voltage, and RESET voltage can be regulated by varying the Al doping concentration. Moreover, we have demonstrated that the device with 15% Al shows the minimum cycle-to-cycle variability (CCV) and superior endurance (over 106). According to density-functional theory (DFT) calculations, it is found that the increased operation voltage, improved uniformity, and improved endurance are attributed to the elevated migration barrier of oxygen vacancy through Al doping. In addition, LRS retention characteristics of the TiN/Ti/HfAlO/TiN devices with different Al concentrations are compared. It is observed that the LRS retention is greatly enhanced due to the suppressed lateral diffusion process of oxygen vacancy through Al doping. This study demonstrates that Al alloying/doping greatly affects the RS behaviors of HfO2-based RRAM and provides a feasible way to improve the RS properties through changing the Al concentration.

Ultralow-Power DST-TFET pH Sensor Exceeding the Nernst Limit with Influence of Temperature on Sensitivity.

In this paper, a dual-source T-channel TFET (DST-TFET)-based pH sensor demonstrating the pH change in the electrolyte has been studied. The proposed device exceeds the Nernst limit of 59 mV/pH by ∼5 folds. The simulation is performed on an ATLAS TCAD tool (SILVACO) and pH is determined by calculating the interface charge density (Δσ) using appropriate physics models. The voltage sensitivities, using various oxides (SiO2, HfO2, Al2O3) with a maximum achieved sensitivity (SV) of 297.66 mV/pH ∼5× Nernst limit, have been calculated. Moreover, this high value of SV is achieved at an ultralow operating voltage of 0.1 V. The results have been validated by proper calibration of models with the experimental data. It is evident from the results that DST-TFET performs well at ultralow power compared to several previously reported devices. Furthermore, the temperature study has been implemented in the proposed sensor to investigate the IDS-VGS characteristics and sensing performance of the device. The pH sensitivity and voltage sensitivity decreased with increase in temperature. The proposed pH sensor with such high sensitivity is an exclusive choice for pH-sensing applications.

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

AbstractUltrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al‐rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications.

Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1-x Nanosheets for p-Type Transistors and Inverters.

Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SexTe1-x thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SexTe1-x alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SexTe1-x nanosheets with high crystallinity. Optimizing the Se composition resulted in a Se0.30Te0.70 nanosheet-based p-type FET with a large on/off current ratio of 4 × 105 and a room-temperature hole mobility of 120 cm2·V-1·s-1, being eight times higher than thermally evaporated SexTe1-x with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type Se0.30Te0.70 and n-type MoS2 nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of Vdd = 3 V.

Highly Reversible Positive-Valence Conversion of Sulfur Chemistry for High-Voltage Zinc-Sulfur Batteries.

Sulfur is a promising conversion-type cathode for zinc batteries (ZBs) due to its high discharge capacity and cost-effectiveness. However, the redox conversion of multivalent S in ZBs is still limited, only having achieved S0/S2- redox conversion with low discharge voltage and poor reversibility. This study presents significant progress by demonstrating, for the first time, the reversible S2-/S4+ redox behavior in ZBs with up to six-electron transfer (with an achieved discharge capacity of ≈1284 mAh g-1) using a highly concentrated ClO4 --containing electrolyte. The developed succinonitrile-Zn(ClO4)2 eutectic electrolyte stabilizes the positive-valence S compound and contributes to an ultra-low polarization voltage. Notably, the achieved flat discharge plateaus demonstrate the highest operation voltage (1.54V) achieved to date in Zn‖S batteries. Furthermore, the high-voltage Zn‖S battery exhibits remarkable conversion dynamics, excellent cycling performance (85.7% capacity retention after 500 cycles), high efficiency (98.4%), and energy density (527WhkgS -1). This strategy of positive-valence conversion of sulfur represents a significant advancement in understanding sulfur chemistry in batteries and holds promise for future high-voltage sulfur-based batteries.

Skin-like n-type stretchable synaptic transistors with low energy consumption and highly reliable plasticity for brain-inspired computing

Artificial synaptic devices with high transconductance, low energy consumption and good stretchability are important for efficient and energy-friendly neuromorphic computations in the field of bionics. Here, we propose a stretchable substrate inspired by wrinkled surface of human skin, and achieve a low energy operation stretchable synaptic transistor (SST) based on n-type oxide semiconductor. The SSTs exhibit excellent performance, including high mobility (4.08 cm2V−1s−1) and high transconductance (over 12 mS) under ultra-low operation voltage of 0.1 V. They can stand against multi-directional stretching of 10 % and up to 400 stretch/release cycles. In addition, the n-type SSTs achieve synaptic performance at ultra-low energy consumption (0.36 fJ) with dual-mode operation characteristics of excitatory and inhibitory behaviors. Under tensile strain, they exhibit typical synaptic behavior, including short-term/long-term plasticity, pair pulse facilitation, spike voltage/frequency/duration/number-dependent plasticity. More importantly, the SSTs exhibit excellent “learning-forgetting-relearning” feature and good stability under potentiation-depression cycle test, showcasing tremendous potential in brain-inspired computation. Finally, a high recognition accuracy (89.6 %) is attained simulated by handwritten digital datasets. To the best of our knowledge, this is the first stretchable synaptic transistor with oxide semiconductors, and it is also a major breakthrough in n-type stretchable synaptic transistors for high-speed and low-energy calculation and storage for brain-inspired computing.