Nonmagnetic Disorder Research Articles

The effect of nonmagnetic disorder in the superconducting energy gap of strontium ruthenate

We have performed for the strontium ruthenate compound, a disordered tight-binding numerical study in the unitary and intermedia scattering regimes analyzing the imaginary part of the self-consistent elastic scattering cross-section at zero temperature as a function of the superconducting gap parameter using the anisotropic limit of the γ sheet. We start this research, mentioning a set of different zero energy superconducting spectrum values inferred from experimental data. Furthermore, it is reproduced the Miyake–Narikiyo tiny triplet gap by varying the zero energy superconducting microscopic parameter. Additionally, using the finite temperature Matsubara Green functions formalism, it is investigated the energy gap as a function temperature and disorder. We conclude that the evolution of the reduced phase space using the elastic scattering cross-section for a triplet order parameter is a useful numerical technique and predicts the two elastic scattering regimes for strontium ruthenate.

Sensitivity of superconducting states to the impurity location in layered materials

The family of multi-layered superconductors derived from the doped topological insulator Bi$_2$Se$_3$ has been found to be unusually robust against non-magnetic disorder. Recent experimental studies have highlighted the fact that the location of impurities could play a critical role for this puzzling robustness. Here we investigate the effects of four different types of impurities, on-site, interstitial, intercalated and polar, on the superconducting critical temperature. We find that different components of the scattering potential are active depending on the impurity configuration and choice of orbitals for the effective low-energy description of the normal state. For the specific case of Bi$_2$Se$_3$-based superconductors, we find that only the symmetric share of impurity configurations contribute to scattering, such that polar impurities are completely inactive. We also find that a more dominant mass-imbalance term in the normal-state Hamiltonian can make the superconducting state more robust to intercalated impurities, in contrast to the case of on-site or interstitial impurities.

Correlated disorder induced anomalous transport in magnetically doped topological insulators

We examine the transport properties of magnetically doped topological insulator (TI) thin films subject to correlated non-magnetic disorder. For the disorder we choose a quasi-periodic potential with a random phase. We restrict the disorder to a central region, which is coupled to two leads in a clean quantum spin Hall insulator (QSHI) state and concentrate on different orientations of the quasi-periodicity in the two-dimensional central region. In the case of a diagonally oriented or purely longitudinal quasi-periodicity we find different topological Anderson insulator (TAI) phases, with a quantum anomalous Hall insulator (QAHI), a quantum spin Chern insulator (QSCI), or a QSHI phase being realized before the Anderson insulation takes over at large disorder strength. Quantized transport from extended bulk states is found for diagonal quasi-periodicity in addition to the above TAI phases that are also observed for the case of uncorrelated disorder. For a purely transverse orientation of the quasi-periodicity the emerging QSHI and QSCI phases persist to arbitrarily strong disorder potential. These topological phase transitions (except to the Anderson insulator phase), can be understood from a self consistent Born approximation.

Spin accumulation in the spin Nernst effect

The spin Nernst effect is a phenomenon in which the spin current flows perpendicular to a temperature gradient. Similar to the spin Hall effect, this phenomenon also causes spin accumulation at the boundaries. Here, we study the spin response to the gradient of the temperature gradient with the use of Green's functions. Our formalism predicts physically observable spin accumulation without the ambiguity regarding the definition of the spin current or the magnetization correction. We prove the generalized Mott relation between the electric and thermal responses assuming the presence of time-reversal symmetry and the absence of inelastic scattering. We also find that thermal spin accumulation vanishes for the three-dimensional Luttinger model but is nonzero for the two-dimensional Rashba model with $\ensuremath{\delta}$-function nonmagnetic disorder in the first Born approximation.

Electronic confinement of surface states in a topological insulator nanowire

We analyze the confinement of electronic surface states in a model of a topological insulator nanowire. Spin-momentum locking in the surface states reduces unwanted backscattering in the presence of nonmagnetic disorder and is known to counteract localization for certain values of magnetic flux threading the wire. We show that intentional backscattering can be induced for a range of conditions in the presence of a nanowire constriction. We propose a geometry for a nanowire that involves two constrictions and show that these regions form effective barriers that allow for the formation of a quantum dot. We analyze the zero-temperature noninteracting electronic transport through the device using the Landauer-B\"uttiker approach and show how externally applied magnetic flux parallel to the nanowire and electrostatic gates can be used to control the spectrum of the quantum dot and the electronic transport through the surface states of the model device.

Spin accumulation without spin current

The spin Hall (SH) effect is a phenomenon in which the spin current flows perpendicular to an applied electric field and causes the spin accumulation at the boundaries. However, in the presence of spin-orbit couplings, the spin current is not well defined. Here, we calculate the spin response to an electric field gradient, which naturally appears at the boundaries. We derive a generic formula using the Bloch wave functions and the phenomenological relaxation time. We also calculate the response for the Rashba model with $\delta$-function nonmagnetic disorder within the first-order Born approximation and corresponding vertex corrections. We find the nonzero spin accumulation, although the SH conductivity exactly vanishes.

Direct observation of intrinsic surface magnetic disorder in amorphous superconducting films

The interplay between disorder and interactions can dramatically influence the physical properties of thin-film superconductors. In the most extreme case, strong disorder is able to suppress superconductivity as an insulating phase emerges. Due to the known pair-breaking potential of magnetic disorder on superconductors, the research focus is on the influence of non-magnetic disorder. Here we provide direct evidence that magnetic disorder is also present at the surface of amorphous superconducting films. This magnetic disorder is present even in the absence of magnetic impurity atoms and is intimately related to the surface termination itself. While bulk superconductivity survives in sufficiently thick films, we suggest that magnetic disorder may crucially affect the superconductor-to-insulator transition in the thin-film limit.

Possible unconventional pairing in (Ca,Sr)3(Ir,Rh)4Sn13 superconductors revealed by controlling disorder

We study the evolution of temperature-dependent resistivity with controlled point-like disorder induced by 2.5 MeV electron irradiation in stoichiometric compositions of the "3-4-13" stannides, $(\text{Ca,Sr})_{3}(\text{Ir,Rh})_{4}\text{Sn}_{13}$.Three of these cubic compounds exhibit a microscopic coexistence of charge-density wave (CDW) order and superconductivity (SC), while $\text{Ca}_{3}\text{Rh}_{4}\text{Sn}_{13}$ does not develop CDW order. As expected, the CDW transition temperature, $T_{\text{CDW}}$, is universally suppressed by irradiation in all three compositions. The superconducting transition temperature, $T_{c}$, behaves in a more complex manner. In $\text{Sr}_{3}\text{Rh}_{4}\text{Sn}_{13}$, it increases initially in a way consistent with a direct competition of CDW and SC, but quickly saturates at higher irradiation doses. In the other three compounds, $T_{c}$ is monotonically suppressed by irradiation. The strongest suppression is found in $\text{Ca}_{3}\text{Rh}_{4}\text{Sn}_{13}$, which does not have CDW order. We further examine this composition by measuring the London penetration depth, $\lambda(T)$, from which we derive the superfluid density. The result unambiguously points to a weak-coupling, full single gap, isotropic superconducting state. Therefore, we must explain two seemingly incompatible experimental observations: a single isotropic superconducting gap and a significant suppression of $T_{c}$ by non-magnetic disorder. We conduct a quantitative theoretical analysis based on a generalized Anderson theorem which points to an unconventional multiband $s^{+-}$-pairing state where the sign of the order parameter is different on one (or a small subset) of the smaller Fermi surface sheets, but remains overall fully-gapped.

Robust all-electrical topological valley filtering using monolayer 2D-Xenes

We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin–orbit coupling. In contrast with conventional quantum spin-Hall edge states localized around the X-points, the interface states appearing at the domain wall between topologically distinct phases are either from the K or K^{prime} points, making them suitable prospects for serving as valley-polarized channels. We show that the presence of a large band-gap quantum spin-Hall effect enables the spatial separation of the spin–valley locked helical interface states with the valley states being protected by spin conservation, leading to robustness against short-range nonmagnetic disorder. By adopting the scattering matrix formalism on a suitably designed device structure, valley-resolved transport in the presence of nonmagnetic short-range disorder for different 2D-Xene materials is also analyzed in detail. Our numerical simulations confirm the role of spin–orbit coupling in achieving an improved valley filter performance with a perfect quantum of conductance attributed to the topologically protected interface states. Our analysis further elaborates clearly the right choice of material, device geometry and other factors that need to be considered while designing an optimized valleytronic filter device.

Non-magnetic ion site disorder effects on the quantum magnetism of a spin-1/2 equilateral triangular lattice antiferromagnet

With the motivation to study how non-magnetic ion site disorder affects the quantum magnetism of Ba3CoSb2O9, a spin-1/2 equilateral triangular lattice antiferromagnet, we performed DC and AC susceptibility, specific heat, elastic and inelastic neutron scattering measurements on single crystalline samples of Ba2.87Sr0.13CoSb2O9 with Sr doping on non-magnetic Ba2+ ion sites. The results show that Ba2.87Sr0.13CoSb2O9 exhibits (i) a two-step magnetic transition at 2.7 K and 3.3 K, respectively; (ii) a possible canted 120 degree spin structure at zero field with reduced ordered moment as 1.24 μ B/Co; (iii) a series of spin state transitions for both H∥ab-plane and H∥c-axis. For H∥ab-plane, the magnetization plateau feature related to the up–up–down phase is significantly suppressed; (iv) an inelastic neutron scattering spectrum with only one gapped mode at zero field, which splits to one gapless and one gapped mode at 9 T. All these features are distinctly different from those observed for the parent compound Ba3CoSb2O9, which demonstrates that the non-magnetic ion site disorder (the Sr doping) plays a complex role on the magnetic properties beyond the conventionally expected randomization of the exchange interactions. We propose the additional effects including the enhancement of quantum spin fluctuations and introduction of a possible spatial anisotropy through the local structural distortions.

Non-magnetic tight binding disorder effects in the γ sheet of Sr2RuO4.

Inspired by the physics of the Miyake - Narikiyo model (MN) for superconductivity in the γ sheet of Sr2RuO4, we set out to investigate numerically the behavior caused by a non-magnetic disorder in the imaginary part of the elastic scattering matrix for an anisotropic tight-binding model. We perform simulations by going from the Unitary to the Born scattering limit, varying the parameter c which is inverse to the strength of the impurity potential. It is found that the unitary and intermedia limits persist for different orders of magnitude in simulating the disorder concentration. Subsequently and in order to find the MN tiny gap, we perform a numerical study of the unitary limit as a function of disorder concentration, to find the tiny anomalous gap.

Intermediate scattering potential strength in electron-irradiated YBa2Cu3O7−δ from London penetration depth measurements

Temperature-dependent London penetration depth, $\lambda(T)$, of a high quality optimally-doped $\text{YBa}_{2}\text{Cu}_{3}\text{O}_{7-\delta}$ single crystal was measured using tunnel-diode resonator. Controlled artificial disorder was induced at low-temperature of 20~K by 2.5 MeV electron irradiation at accumulating large doses of $3.8\times10^{19}$ and $5.3\times10^{19}$ electrons per $\textrm{cm}^{2}$. The irradiation caused significant suppression of the superconductor's critical temperature, $T_{c}$, from 94.6 K to 90.0 K, and then to 78.7 K, respectively. The low-temperature behavior of $\lambda\left(T\right)$ evolves from a $T-$linear in pristine state to a $T^{2}-$behavior after the irradiation, expected for a line-nodal $d-$wave superconductor. However, the original theory that explained such behavior had assumed a unitary limit of the scattering potential, whereas usually in normal metals and semiconductors, Born scattering is sufficient to describe the experiment. To estimate the scattering potential strength, we calculated the normalized superfluid density, $\rho_{s}\left(t=T/T_{c}\right)=\lambda^{2}\left(0\right)/\lambda^{2}\left(t\right)$, varying the amount and the strength of non-magnetic scattering using a self-consistent $t-$matrix theory. Fitting the obtained curves to a power-law, $\rho_{s}=1-Rt^{n}$, and to a polynomial, $\rho_{s}=1-At-Bt^{2}$, and comparing the coefficients $n$ in one set, and $A$ and $B$ in another with the experimental values, we estimate the phase shift to be around 70$^{\circ}$ and 65$^{\circ}$, respectively. We correlate this result with the evolution of the density of states with non-magnetic disorder.

Multiband superconductivity in V3Si determined from studying the response to controlled disorder

The London penetration depth, $\lambda(T)$, was measured in a single crystal V$_{3}$Si. The superfluid density obtained from this measurement shows a distinct signature of two almost decoupled superconducting gaps. This alone is insufficient to distinguish between $s_{\pm}$ and $s_{++}$ pairing states, but it can be achieved by studying the effect of a controlled non-magnetic disorder on the superconducting transition temperature, $T_{c}$. For this purpose, the same $\text{V}_{3}\text{Si}$ crystal was sequentially irradiated by 2.5 MeV electrons three times, repeating the measurement between the irradiation runs. A total dose of 10 C/cm$^{2}$ ($6.24\times10^{19}$ electrons/$\textrm{cm}^{2}$) was accumulated, for which $T_{c}$ has changed from 16.4 K in a pristine state to 14.7 K (9.3 $\%$). This substantial suppression is impossible for a single isotropic gap, but also it is not large enough for a sign-changing $s_{\pm}$ pairing state. Our electronic band-structure calculations show how five bands crossing the Fermi energy can be naturally grouped to support two effective gaps, not dissimilar from the iron pnictides physics. We analyze the results using two-gap models for both, $\lambda(T)$ and $T_{c}$, which describe the data very well. Thus, the experimental results and theoretical analysis provide strong support for an $s_{++}$ superconductivity with two unequal gaps, $\Delta_{1}\left(0\right)\approx2.53\;\textrm{meV}$ and $\Delta_{2}\left(0\right)\approx1.42\;\textrm{meV}$, and a very weak inter-band coupling in $\text{V}_{3}\text{Si}$ superconductor.

Supercurrents and spontaneous time-reversal symmetry breaking by nonmagnetic disorder in unconventional superconductors

Recently, a theoretical study [Z.-X. Li et al., npj Quantum Mater. 6, 36 (2021)] investigated a model of a disordered $d$-wave superconductor, and reported local time-reversal symmetry breaking current loops for sufficiently high disorder levels. Since the pure $d$-wave superconducting state does not break time-reversal symmetry, it is surprising that such persistent currents arise purely from nonmagnetic disorder. Here, we perform a detailed theoretical investigation of such disorder-induced orbital currents, and show that the occurrence of the currents can be traced to the emergence of local (extended) $s$-wave order coexisting with underlying disordered $d$-wave pairing, making it favorable to generate local $s\ifmmode\pm\else\textpm\fi{}id$ regions. We discuss the energetics leading to such regions of $s\ifmmode\pm\else\textpm\fi{}id$ order, which support spontaneous local current loops in the presence of inhomogeneous density modulations.

Photoinduced quantum anomalous Hall states in the topological Anderson insulator

The realization of the quantum anomalous Hall (QAH) effect without magnetic doping attracts intensive interest since magnetically doped topological insulators usually possess inhomogeneity of ferromagnetic order. Here, we propose a different strategy to realize intriguing QAH states arising from the interplay of light and non-magnetic disorder in two-dimensional topologically trivial systems. By combining the Born approximation and Floquet theory, we show that a time-reversal invariant disorder-induced topological insulator, known as the topological Anderson insulator (TAI), would evolve into a time-reversal broken TAI and then into a QAH insulator by shining circularly polarized light. We utilize spin and charge Hall conductivities, which can be measured in experiments directly, to distinguish these three different topological phases. This work not only offers an exciting opportunity to realize the high-temperature QAH effect without magnetic orders, but also is important for applications of topological states to spintronics.

The Effect of Nonmagnetic Disorder in the Energy Gap at Zero Temperature for the Fs Γ-Sheet of Strontium Ruthenate

The Effect of Nonmagnetic Disorder in the Energy Gap at Zero Temperature for the Fs Γ-Sheet of Strontium Ruthenate

Visualizing band selective enhancement of quasiparticle lifetime in a metallic ferromagnet

Electrons navigate more easily in a background of ordered magnetic moments than around randomly oriented ones. This fundamental quantum mechanical principle is due to their Bloch wave nature and also underlies ballistic electronic motion in a perfect crystal. As a result, a paramagnetic metal that develops ferromagnetic order often experiences a sharp drop in the resistivity. Despite the universality of this phenomenon, a direct observation of the impact of ferromagnetic order on the electronic quasiparticles in a magnetic metal is still lacking. Here we demonstrate that quasiparticles experience a significant enhancement of their lifetime in the ferromagnetic state of the low-density magnetic semimetal EuCd2As2, but this occurs only in selected bands and specific energy ranges. This is a direct consequence of the magnetically induced band splitting and the multi-orbital nature of the material. Our detailed study allows to disentangle different electronic scattering mechanisms due to non-magnetic disorder and magnon exchange. Such high momentum and energy dependence quasiparticle lifetime enhancement can lead to spin selective transport and potential spintronic applications.

Localization of helical edge states in the absence of external magnetic field

Theoretically, the helical edge states of two-dimensional topological insulators are protected from coherent backscattering due to nonmagnetic disorder provided electron interactions are not too strong. Experimentally, the edges typically do not demonstrate the systematic and robust quantization, at the same time little is known about the sub-Kelvin temperature behavior. Here, we report the surprising localization of the edge states in an 8 nm HgTe quantum well in zero magnetic field at millikelvin temperatures. Additionally, the magnetoresistance data at 0.5 K for the edges few micrometers long suggests the field-dependent localization length $l_B\propto B^{-\alpha}$, with $\alpha$ ranging approximately from $1.6$ to $2.8$ at fields $B\lesssim0.1\,\text{T}$ and $\alpha\approx1.1$ at higher fields up to $0.5\,\text{T}$. In the frame of disordered interacting edge, these values of $\alpha$ correspond to the Luttinger liquid parameters $K\approx 0.9-1.1$ and $K\approx 0.6$, respectively. We discuss possible scenarios which could result in the zero magnetic field localization.

Anderson localization induced by spin-flip disorder in large-Chern-number quantum anomalous Hall effect

We numerically investigate the localization mechanisms of the quantum anomalous Hall effect (QAHE) with a large Chern number $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films doped with nonmagnetic or spin-flip (magnetic) disorder. By calculating the modified Berry curvature in real space, we demonstrate that QAHEs in both systems turn into Anderson insulators when the disorder strength is large enough in the presence of nonmagnetic disorder. However, in the presence of spin-flip disorder, the localization mechanisms in the two systems are completely distinct. For ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $\mathcal{C}=4$ first enters a metallic phase and then turns into an Anderson insulator with the increase of disorder strength, whereas for magnetic topological insulator thin films, the QAHE with $\mathcal{C}=\ensuremath{-}\mathcal{N}$ first enters a metallic phase, then turns into another QAHE with $\mathcal{C}=\ensuremath{-}(\mathcal{N}\ensuremath{-}1)$ as disorder strength increases, and finally turns into an Anderson insulator after $\mathcal{N}\ensuremath{-}1$ cycles between QAHE and metallic phases. The phase transitions in the two systems originate from the exchange of Berry curvature between conduction and valence bands. In the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase-transition mechanisms.

Quantum Spin-Valley Hall Kink States: From Concept to Materials Design.

We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against both nonmagnetic short- and long-range and magnetic long-range disorder, verified by the Green-function calculations. Based on first-principles results and our fabricated samples, we show that QSVHK states, protected with a gap up to 287meV, can be realized in bismuthene by alloy engineering, surface functionalization, or electric field, supporting nonvolatile applications of spin-valley filters, valves, and waveguides even at room temperature.