Liquid phase epitaxial growth of Hg 1− x Zn x Te, 0.16 ≤ x ≤ 0.24, and Cd 1− y ZnyTe, 0 ≤ y ≤ 0.20, was performed on Cd 1− z Zn z Te substrates, 0 ≤ z ≤ 0.26. The effect of the lattice mismatch on the surface morphology, on the interface between the epilayer and the substrate and on the crystalline quality of the epilayers was studied. Typical phenomena were found for growth under a specific range of lattice mismatch, influenced also by the initial degree of supercooling of the growth solution. The layers of each of the two systems were categorized into various types, according to the effect of these two parameters on the layers characteristics. The relation of the Hg 1− x Cd x Te⧸ CdTe heterostructure with this classification is indicated. Systematic study of the dependence of the epilayers thickness on the growth conditions helped to reveal the role of the strain energy, originated from the lattice mismatch, that might be involved in the formation of the various types of the layers. In the HgZnTe system, conditions of large negative lattice mismatch and low supercooling, led to homogeneous meltback of the substrate. The meltback was followed by regrowth of a continuous, mirror-like layer, with a fairly smooth interface. The crystalline quality of such a layer was poor. In the CdZnTe system, the meltback which was induced by the lattice mismatch, was localized in micro fissures, tracing preferential crystallographic directions. For comparable lattice mismatch, the supercooling of the growth solution, needed in the CdZnTe system to prevent substrate meltback, was much higher than in the HgZnTe system.