Abstract
Misfit dislocations in InP/InGaAsP/InP DH wafers have been investigated by X-ray transmission topography in relation to lattice mismatch measured by a double crystal X-ray diffractometer. The misfit dislocations are 60° dislocations and are generated in the top InP layer around the wafer periphery. The negative lattice mismatch between the top InP layer and the substrate is always observed in the region with misfit dislocations and is not observed in the region without misfit dislocations. With heat-treatment, most of the misfit dislocations are unaffected and some new ones are generated. The following generation mechanism is proposed: mobile 60° dislocations rapidly move toward the center region from dislocation sources at the wafer edges in the top InP layer during growth due to the lattice mismatch berween the top InP layer and the substrate and they move more easily in InP than in InGaAsP.
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