Nanowire Arrays Research Articles

Solar evaporation of liquid marbles with composite nanowire arrays

Solar interfacial evaporation is a sustainable technology to produce fresh water. The synergistic realization of broadband light absorption and good thermal insulation is crucial to improving the thermal efficiency. Here, we propose a new structure over the surface of liquid marbles, which via nanowire arrays assembled with composite nanomaterials (Fe3O4/CNT nanoparticles) to enhance the evaporation efficiency. The composite materials can effectively absorb light across the entire solar spectrum. Multiple reflections of light over nanowire array further improve light absorption. The narrow spaces and local particle aggregation of the nanowire array enhance thermal insulation to improve the evaporation efficiency. A series of experiments were conducted to verify the concept. The results showed that liquid marbles with upward Fe3O4/CNT nanowire arrays (Fe3O4/CNT-ULM) enhance the light harvesting ability and thermal insulation. Fe3O4/CNT-ULM at a volume ratio 1:2 provides the highest evaporation rate of 12.25 μg/s, which is about 1.16 and 1.53 times higher than that of Fe3O4 and CNT, respectively. Numerical analysis further illustrates that the combination of composite materials and nanowire arrays enhances concentration of electromagnetic field and heat at the air/water interfaces. This promotes rapid evaporation at the thermal boundary region, which has important implications for the structure design of solar interfacial evaporator.

Enhancement of photoresponse for InGaAs infrared photodetectors using plasmonic WO3-x/CsyWO3-xnanocrystals.

Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation to improve NIR photodetection, aiming to surpass the performance of established III-V semiconductor p-i-n (PIN) junction technology. These platforms include in situ-grown inorganic nanocrystals and nanowire arrays, as well as hybrid organic-inorganic materials such as graphene-perovskite heterostructures. However, challenges remain in nanocrystal and nanowire growth, large-area fabrication of high-quality 2D materials, and the fabrication of devices for practical applications. Here, we explore the potential for tailored semiconductor nanocrystals to enhance the responsivity of planar metal-semiconductor-metal (MSM) photodetectors. MSM technology offers ease of fabrication and fast response times compared to PIN detectors. We observe enhancement of the optical-to-electric conversion efficiency by up to a factor of ~2.5 through the application of plasmonically-active semiconductor nanorods and nanocrystals. We present a protocol for synthesizing and rapidly testing the performance of non-stoichiometric tungsten oxide (WO3-x) nanorods and cesium-doped tungsten oxide (CsyWO3-x) hexagonal nanoprisms prepared in colloidal suspensions and drop-cast onto photodetector surfaces. The results demonstrate the potential for a cost-effective and scalable method exploiting tailored nanocrystals to improve the performance of NIR optoelectronic devices.

Epitaxial growth of bottom-crosslinked ZnGa2O4 nanowire arrays on c-plane GaN/Al2O3 substrate

The epitaxial growth of highly ordered ZnGa2O4 nanowire arrays and the construction of connectivity states between the individually segregated nanowires would significantly improve the performance of ZnGa2O4-based devices and expand their application fields. Herein, a strategy to construct high crystalline quality and well-aligned bottom-crosslinked ZnGa2O4 nanowire arrays along seven equivalent crystallographic directions of [111], [111̅], [11̅1], [1̅11], [11̅1̅], [1̅11̅] and [1̅1̅1] on Au-coated (0001) GaN/Al2O3 substrates using chemical vapor deposition (CVD) is proposed. The vapor-liquid-solid (VLS) mechanism dominates the entire growth process. The horizontal nanowires induced to nucleate and grow by catalyst droplets encountered and then turned towards inclined nanowires. Meanwhile, catalyst droplets that failed to move horizontally were enclosed by horizontal nanowires, resulting in the induction of perpendicular nanowire growth. The film-like horizontal nanowires connected all the inclined and perpendicular nanowires to form the bottom-crosslinked nanowire arrays. Additionally, the morphology, structure and optical properties of the ZnGa2O4 nanowire arrays, as well as the influence of Au layer thickness and growth time on the growth of ZnGa2O4 nanowires, were further characterized and thoroughly investigated. The proposed strategy achieved the growth of epitaxial well-aligned ZnGa2O4 nanowire arrays with bottom cross-linking, which is conducive to the application of ZnGa2O4 nanowires in optoelectronics.

Magnetic properties of bamboo-like Ni-Zn-in nanowires using 3D-AAO templates

In this paper, using three-dimensional porous alumina (3D-AAO) as a template, Ni-Zn-In nanowires array with periodically changing diameters was successfully prepared by direct current electrodeposition method. The effect of deposition voltage on the morphology, crystal structure and magnetic properties of Ni-Zn-In ternary alloy nanowires was studied. The experimental results show that the diameters of the nanowires are 212 nm and 151 nm, and the periodic length is 800 nm, which matches the pore size of the phosphoric acid-etched 3D-AAO template. XRD results indicate that the crystal structure of Ni-Zn-In nanowires can be adjusted by the deposition voltage. The VSM results reveal that the Ni-Zn-In nanowires possess soft magnetic properties and significant magnetic anisotropy, with the easy magnetization direction parallel to the film. The nanowires deposited at −1.5 V exhibit the highest coercivity of 161 Oe and squareness of 0.045. Micromagnetic simulations show that the magnetization reversal mechanism of the Ni-Zn-In nanowires is localized nucleation mode.

Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy

Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area growth using a Si3N4 mask and molecular beam epitaxy. Systematic modulation of the emission along the nanowire axis is observed in spectrally resolved cathodoluminescence linescans. We show that this intensity change is an indicator of unintentional Si incorporation during growth resulting from the interaction between the impinging Ga atoms and the mask material. The gradual reduction of the cathodoluminescence intensity along the nanowire highlights the important role of the growth geometry within the synthesis reactor, with shadowing from the elongating nanowires inhibiting the reaction with the mask. This gradient in Si doping is confirmed by the quenching of the longitudinal optical phonon line measured in Raman spectra along the nanowire axis. The corresponding carrier density is derived from the frequency of the coupled phonon–plasmon mode. The spectroscopic identification of inversion domain boundaries in the majority of the nanowires is also attributed to the Si incorporation. From temperature dependent cathodoluminescence experiments, we derive the activation energy for excitons bound to these defects.

Cold-sintered self-assembly of layer-ordered hydroxyapatite nanowire arrays for efficient oil/water separation

Modified membranes and block materials with abundant porous structures have been extensively studied for oil/water separation due to their unique wettability and high specific surface area, crucial factors for high separation efficiency. This study used oleic acid to induce the hierarchical self-assembly of hydrophobic hydroxyapatite nanowires during the cold sintering process, producing a dense, layer-wise stretchable block structure. This cold sintering process sample exhibits interlayer expansion when immersed in water, spatially transitioning from a dense block to a loose, two-dimensional hydrophobic film. The small-volume, dense block contains a hydrophobic layer structure, enriching the specific surface area and integrating the advantages of hydrophobic membranes and block materials with a high specific surface area, offering a novel approach to creating dense and efficient oil/water separation materials. It grants an economical and environmentally friendly solution for large-scale oil/water separation in practical applications.

Detecting Magneto-Optical Interactions in Nanostructures

Effects due to magneto-optical interactions are responsible for most of the phenomena discovered in optoelectronics and spintronics. Magneto-optical interactions can generate elementary excitations of the order of light-magnetic matter, which can flow under certain conditions. Here, we observe the intensities of magneto-optical interactions in hexagonal arrays of magnetic nanowires using experimental measurements and simulations. Nanowires of three materials (cobalt-Co, iron-Fe, and nickel-Ni) were electrodeposited on alumina membranes by the AC electrodeposition method. Our results reveal that the magneto-optical behavior can produce, under certain conditions, a kind of avalanche of magneto-optical interactions, which is dynamic. Such an observation shows the possibility of generating a magneto-optical current (spin-opto current).

Fe2NiSe4 Nanowires Array for Highly Efficient Electrochemical H2S Splitting and Simultaneous Energy-Saving H2 Production

The electrochemical removal of abundant and toxic H2S from highly sour reservoirs has emerged as a promising method for hydrogen production and desulfurization. Nevertheless, the ineffectiveness and instability of current electrocatalysts have impeded further utilization of H2S. In this communication, we introduce a robust array of Fe2NiSe4 nanowires synthesized in situ on a FeNi3 foam (Fe2NiSe4/FeNi3) via hydrothermal treatment. This array acts as an active electrocatalyst for ambient H2S splitting. It offers numerous exposed active sites and a rapid electron transport channel, significantly enhancing charge transport rates. As an electrode material, Fe2NiSe4/FeNi3 displays remarkable electrocatalytic efficiency for both sulfide oxidation and hydrogen evolution reactions. This bifunctional electrode achieves efficient electrochemical H2S splitting at a low potential of 440 mV to reach a current density of 100 mA∙cm−2, with a faradaic efficiency for hydrogen production of approximately 98%. These findings highlight its significant potential for desulfurization and energy-efficient hydrogen generation.

CMOS-Compatible High-Performance Silicon Nanowire Array Natural Light Electronic Detection System.

In this article, we propose a novel natural light detector based on high-performance silicon nanowire (SiNW) arrays. We achieved a highly controllable and low-cost fabrication of SiNW natural light detectors by using only a conventional micromachined CMOS process. The high activity of SiNWs leads to the poor long-term stability of the SiNW device, and for this reason, we have designed a fully wrapped structure for SiNWs. SiNWs are wrapped in transparent silicon nitride and silicon oxide films, which greatly improves the long-term stability of the detector; at the same time, this structure protects the SiNWs from breakage. In addition, the SiNW arrays are regularly distributed on the top of the detector, which can quickly respond to natural light. The response time of the detector is about 0.015 s. Under the illumination of 1 W·m-2 light intensity, multiple SiNWs were detected together. The signal strength of the detector reached 1.82 μA, the signal-to-noise ratio was 47.6 dB, and the power consumption was only 0.91 μW. The high-intensity and highly reliable initial signal reduces the cost and complexity of the backend signal processing circuit. A low-cost and high-performance STM32 microcontroller can realize the signal processing task. Therefore, we built a high-performance SiNW natural optoelectronic detection system based on an STM32 microcontroller, which achieved the real-time detection of natural light intensity, with an accuracy of ±0.1 W·m-2. These excellent test performances indicate that the SiNW array natural light detector in this article meey the requirements of practicality and has broad potential for application.

Continuous Space-Time Crystal State Driven by Nonreciprocal Optical Forces.

We show that the continuous time crystal state can arise in an ensemble of linear oscillators from nonconservative coupling via optical radiation pressure forces. This new mechanism comprehensively explains observations of the time crystal state in an array of nanowires illuminated with light [T. Liu et al., Nat. Phys. 19, 986 (2023).NPAHAX1745-247310.1038/s41567-023-02023-5]. Being fundamentally different from regimes of nonlinear synchronization, it has relevance to a wide range of interacting many-body systems, including in the realms of chemistry, biology, weather, and nanoscale matter.

Thermo-Convective Solution Growth of Vertically Aligned Zinc Oxide Nanowire Arrays for Piezoelectric Energy Harvesting

The search for a synthesis method to create longer ZnO NWAs with high-quality vertical alignment, and the investigation of their electrical properties, have become increasingly important. In this study, a hydrothermal method for growing vertically aligned arrays of ZnO nanowires (NWs) using localized heating was utilized. To produce longer NWs, the temperature environment of the growth system was optimized with a novel reaction container that provided improved thermal insulation. At a process temperature above ~90 °C, ZnO NWs reached a length of ~26.8 µm within 24 h, corresponding to a growth rate of 1.1 µm/h, nearly double the rate of 0.6 µm/h observed in traditional chemical bath growth using a glass reactor. The densely grown NWs (~1.9/µm2), with a diameter of ~0.65 µm, exhibited a preferred hexagonal c-axis orientation and were vertically aligned to the (100) silicon (Si) substrate. These NW structures have multiple applications, e.g., in piezotronic strain sensors, gas sensing, and piezoelectric energy harvesting. As proof of concept, a piezoelectric nanogenerator (PENG) was fabricated by embedding the NWs in an S1818 polymer matrix over a 15 mm × 15 mm area. Under repeated impulse-type compressive forces of 0.9 N, a maximum peak output voltage of ~95.9 mV was recorded, which is higher by a factor of four to five than the peak output voltage of 21.6 mV previously obtained with NWs measuring ~1.8 µm in length.

MnOx Embedded in Silicon Nanowire Arrays for High-Performance Supercapacitors

MnOx Embedded in Silicon Nanowire Arrays for High-Performance Supercapacitors

Transverse magneto-optical Kerr effect enhancement in si–ni nanogratings by mie and surface lattice resonances

We demonstrate experimentally that a one-dimensional array of silicon nanowires periodically placed on a nickel substrate enhances the transverse magneto-optical Kerr effect (TMOKE) compared to a nickel film. The enhancement mechanism is associated with the excitation of two types of resonances: multipole Mie resonances in each nanowire and surface lattice resonances (SLRs) emerging from the periodic arrangement of the nanowires. The maximal TMOKE values reached up to 1.9 % and 2.6 % due to the excitation of SLR and a magnetic dipole resonance, respectively. When the SLR is excited, the spectral width of the TMOKE enhancement is narrower compared to the case of the magnetic dipole resonance.

Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111).

Functional and abundant substrate materials are relevant for applying all sophisticated semiconductor-based device components such as nanowire arrays. In the case of GaN nanowires grown by metalorganic vapor phase epitaxy, Si(111) substrates are widely used, together with an AlN interlayer to suppress the well-known Ga-based melt-back-etching. However, the AlN interlayer can degrade the interfacial conductivity of the Si(111) substrate. To reveal the possible impact of this interlayer on the overall electrical performance, an advanced analysis of the electrical behavior with suitable spatial resolution is essential. For the electrical investigation of the nanowire-to-substrate junction, we used a four-point probe measurement setup with sufficiently high spatial resolution. The charge separation behavior of the junction is also demonstrated by an electron beam-induced current mode, while the n-GaN nanowire (NW) core exhibits good electrical conductivity. The charge carrier-selective transport at the NW-to-substrate junction can be attributed to different, local material compositions by two main effects: the reduction of Ga adatoms by shadowing of the lower part of the NW structure by the top part during growth, i.e. the protection of the pedestal footprint from Ga adsorption. Our combination of investigation methods provides direct insight into the nanowire-to-substrate junction and leads to a model of the conductivity channels at the nanowire base. This knowledge is crucial for all future GaN bottom-up grown nanowire structure devices on conductive Si(111) substrates.

Ultra-dense Green InGaN/GaN Nanoscale Pixels with High Luminescence Stability and Uniformity for Near-Eye Displays.

Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect. Herein, we report nanoscale pixelation of green InGaN/GaN LEDs incorporating strain-engineered ultra-dense nanowire (NW) arrays, corresponding to ∼36,000 pixels per inch. The NW pixel arrays exhibit a stable peak wavelength emission at ∼500 nm for over 3 orders of magnitude of injection current densities (from ∼4 A/cm2 to ∼1 kA/cm2). The observed wavelength stability enhancement (a reduced blue-shift of just ∼4 nm) directly results from the suppressed built-in electric field achieved by strain relaxation of the axial multi quantum wells in the NWs. Finite difference time domain simulations show that emission of the pixel array is significantly increased owing to the enhanced spontaneous emission rate (characterized by a high Purcell factor of ≈2) of the ultra-dense NWs. We have demonstrated top-down NWs, where each NW (diameter ranging down to 200 nm) shows excellent uniformity and light output characteristics in direct contrast to bottom-up grown NW heterostructures. The results of this study establish a viable route for realizing nanoscale pixels with high luminescence stability and wafer-scale uniformity with high (>20%) indium composition InGaN/GaN LED heterostructures, for next-generation near-eye displays.

N-acetylcysteine effects on extracellular polymeric substances of Xylella fastidiosa: A spatiotemporal investigation with implications for biofilm disruption

BackgroundThe matrix of extracellular polymeric substances (EPS) present in biofilms greatly amplifies the problem of bacterial infections, protecting bacteria against antimicrobial treatments and eventually leading to bacterial resistance. The need for alternative treatments that destroy the EPS matrix becomes evident. N-acetylcysteine (NAC) is one option that presents diverse effects against bacteria; however, the different mechanisms of action of NAC in biofilms have yet to be elucidated. ObjectivesIn this work, we performed microscopy studies at micro and nano scales to address the effects of NAC at single cell level and early-stage biofilms of the Xylella fastidiosa phytopathogen. MethodsWe show the physical effects of NAC on the adhesion surface and the different types of EPS, as well as the mechanical response of individual bacteria to NAC concentrations between 2 and 20 mg/mL. ResultsNAC modified the conditioning film on the substrate, broke down the soluble EPS, resulting in the release of adherent bacteria, decreased the volume of loosely bound EPS, and disrupted the biofilm matrix. Tightly bound EPS suffered structural alterations despite no solid evidence of its removal. In addition, bacterial force measurements upon NAC action performed with InP nanowire arrays showed an enhanced momentum transfer to the nanowires due to increased cell mobility resulting from EPS removal. ConclusionsOur results clearly show that conditioning film and soluble EPS play a key role in cell adhesion control and that NAC alters EPS structure, providing solid evidence that NAC actuates mainly on EPS removal, both at single cell and biofilm levels.

The effect of diameter on hysteresis loop squareness in iron nanowires array by micromagnetic simulation

Utilization of micromagnetic simulation is a very attractive subject to understand the magnetic behavior of nanowire arrays that tune their geometrical features and magnetic properties. Here, the micromagnetic simulations utilize to investigation of the single, and a 3 × 3 array of iron nanowires with diameters from 30 to 60 nm. The diameter size and the distance between the wires are selected according to the fabrication of iron nanowires grown in alumina templates. The simulation indicated that an increase in diameter led to a decrease in the coercive field and squareness ratio in both single nanowires and nanowire arrays. Besides, the simulation discloses that the magnetization reversal process of the nanowires with diameters more than 42 nm occurs through the nucleation and propagation of vortex domain walls. In the nanowires array, an increase in wire diameter increases the number of jumps in the hysteresis loop, indicating a more magnetic interaction between the nanowires.

Boosting synergistic hole separation and transfer in the TiO2-MXene photoanode by depositing amorphous NiOOH/CoOOH cocatalysts

The efficient separation and transport of photogenerated charge carriers within the photoanode are pivotal for achieving high-performance photoelectrochemical (PEC) water splitting. In this study, TiO2-MXene nanowire arrays (NWAs) adorned with amorphous CoOOH/NiOOH (CN) were fabricated using hydrothermal and photo-assisted electrodeposition techniques. TiO2-MXene-CN NWAs demonstrated a photocurrent density of 1.51 mA/cm2 at 1.23 V versus the reversible hydrogen electrode (vs. RHE), which is 1.46 times and 2.79 times that of TiO2-CN and TiO2, respectively. Electrochemical impedance spectroscopy, photoluminescence, time-resolved photoluminescence, and Mott-Schottky analysis unveiled that the incorporation of MXene and CN substantially augmented the separation of photogenerated electron-hole pairs and efficient charge carrier utilization. Furthermore, the loading of MXene-CN layers ameliorated the light absorption performance of bare TiO2 NWAs. This work provides valuable insights for the design of photoelectrodes employing wide-bandgap materials.

Nanowire arrays with abundant Cu–Ni interfaces for electroreduction of CO2 to ethylene

Electrochemical reduction of CO2 to ethylene (C2H4), driven by renewable electricity, represents a strategy for sustainable development and carbon neutrality. However, continuous production of C2H4 at high efficiency and low cost remains a significant challenge. Herein, a synergistic approach using non-precious metals was employed, and in situ construction of a nanoarray structure with abundant Cu–Ni interfaces (Ni/Cu NWs) on a gas diffusion layer (GDL) was performed. The atomic interactions at the interface significantly enhanced the efficiency of C–C coupling. The Faraday efficiency (FE) for C2H4 production reached 58.65 %, and the current density of 253.42 mA cm−2 at −1.1 V, markedly surpassing that of bare Cu nanowire (Cu NWs, 25.33 %). By virtue of the in-situ construction on the GDL, the Cu–Ni interface catalyst demonstrated excellent stability, operating under high current for more than 72 h. In situ infrared characterization and theoretical calculations demonstrate that the incorporation of Ni effectively enhanced the CO2 activation process, which is beneficial for the accumulation of key intermediate of C–C coupling. At the Cu–Ni interface, the energy barrier for C–C coupling was reduced, thereby effectively promoting the conversion of C2H4. This work presents a solution strategy for the interfacial engineering of non-precious metal catalysts.

Formation of Armored Silicon Nanowires Array via High-Repetition-Rate Femtosecond Laser Oxidation for Robust Surface-Enhanced Raman Scattering Detection.

Superhydrophobic nanostructures with dense hotspots and high concentration efficiency are of paramount importance for highly sensitive surface-enhanced Raman scattering (SERS) detection. However, their low mechanical strength makes them susceptible to damage from external interferences, leading to hotspot loss and superhydrophobicity failure. In this study, robust SERS detection is achieved using an armored superhydrophobic silicon nanowires array. A micro/nanocross-scale oxide mask is created through high-repetition-rate femtosecond laser oxidation to fabricate the armored nanowires array. The underlying mechanisms of the nanoparticle layer serving as a mask in deep reactive ion etching (DRIE) are analyzed to elucidate the formation of the silicon nanowires. The armored nanowires array SERS substrate exhibits a high contact angle of 158°, demonstrating exceptional analyte enrichment capability. Combined with the dense hotspots provided by the high aspect ratio nanostructures, the detection limit for Rhodamine 6G is 10-13 M, and the enhancement factor (EF) is 4.35 × 109. After undergoing various mechanical tests, the substrate maintains its superhydrophobicity along with a stable Raman signal enhancement, demonstrating its resistance to potential external interference in SERS detection. The sensitive detection of various analytes highlights the promising applications of the armored nanowires substrate in diverse SERS scenarios.