Nanostructured Indium Tin Oxide Research Articles

Preparation and Characterization of Nanostructured ITO Thin Films by Spray Pyrolysis Technique: Dependence on Annealing Temperature

Transparent conducting oxides (TCOs) like Indium tin oxide (ITO) have wide attention from all scientists which have low resistance and high visible light transmittance, used as transparent electrodes in many optoelectronic devices such as liquid crystal displays, touch screens, light emitting diodes, and solar cells. In this research, the relationship between the crystallization, optical transmittance, and surface roughness of nanostructured ITO thin films and the change in annealing temperature was investigated. To enhance the efficiency of this material in optoelectronic applications, both the optical transmittance in the visible region and the crystallite size must be increased. These results can be obtained by the heat treatment of the films. Nanostructured ITO thin layer films have been successfully prepared at a substrate temperature equal to (350)℃ by chemical spray pyrolysis (CSP) technique. The physical characterizations of nanostructured ITO thin layer films were investigated at different annealing temperatures (400,450 and 500)℃. The presence of diffraction peaks indicates that the as-deposited and post annealed films are polycrystalline cubic structure and the peak (400) is a preferred growth orientation. For all samples the value of intensity of diffraction peaks increases with increasing substrate temperature. The crystallite size of nanostructured ITO thin films is strongly related to the annealing temperature. The crystallite size estimated from XRD was found to rise with rising annealing temperature. The surface roughness of nanostructured ITO thin layer films increases with rising annealing temperature. High values of transmittance have been measured in the visible region 550 nm equal to (70, 82, 84 and 88)% corresponding to annealing temperature (350,400,450 and 500)℃ respectively.

ZnS:Mn electroluminescent display based on nanostructured indium tin oxide films

Thin-film electroluminescent (TFEL) displays have found applications in various industries and areas due to their unique advantages, where high brightness, a wide temperature range, and reliability are crucial. However, despite their benefits, they also face certain limitations and challenges. TFEL displays typically demand relatively high operating voltages. Total internal reflection in the multilayered structure can significantly impede light extraction from the display. In this study, we propose an optimization of the TFEL display structure to enhance light extraction efficiency and reduce operating voltage. Nanostructured indium tin oxide films, obtained by electron beam evaporation on a heated substrate, were utilized to amplify the electric field in a phosphor layer and to create a non-regular light-scattering relief that effectively breaks internal reflection conditions within the display structure. As a result, the display brightness at operating voltage increased by more than 1.5 times.

Fabrication and Characterization of Nanostructured Tin doped Indium Oxide Coatings by the Instrument of Spray Pyrolysis

Nanostructured indium tin oxide (ITO) coating is one of the transparent conductive oxides (TCO) materials utilized as a transparent electrode. Due to its high demand in various applications like liquid crystal displays, touch screens, light emitting devices, and solar cells, ITO coatings have garnered significant research attention, owing to their excellent properties of high visible light transmittance and low resistance. Nanostructured coating of tin -doped Indium Oxide (ITO) was fabricated on glass slides utilizing the instrument of chemical spray pyrolysis (CSP), with varying levels of Sn-doping at 0, 3, 6, and 9 wt%. The effect of tin content on the many physical characteristics of the resulting coatings has been examined. The analysis of x-ray diffraction (XRD) displayed the characteristic orientations. The coatings have a polycrystalline cubic lattice structure along (400) as the preferred growth direction. Morphological measurements indicate that the samples possess a highly uniform surface and the grain size for the ITO samples is 100 nm displaying a nanostructure for all samples. The optical transmittance was measured over 75% for coating with tin content equal to 0wt%, while the transmittance of the Sn-doped films can range from 78% to 84% at 700 nm and the values of the direct bandgap were measured as 3.6, 3.65, 3.675, and 3.7eV for Sn doping 0, 3, 6, and 9 wt% respectively. In the visible area, the nanostructured ITO coatings exhibit elevated values of transmittance which makes them suitable for various optoelectronic applications such as window materials in solar cells. The results indicate a desirable reduction in the electrical resistivity with rising the number of carriers per unit volume and mobility with increasing tin content in the samples. The minimum electrical resistivity and maximum carrier concentration were achieved for ITO coating with tin content equal to 9wt%. The incorporation of Sn dopant significantly changes the overall electrical properties of indium oxide films, this is favorable for transparent conducting oxide.

A layer-by-layer green inkjet printing methodology for developing indium tin oxide (ITO)-based transparent and conductive nanofilms

A facile, cost-effective, and green inkjet printing methodology is proposed for the fabrication of a transparent and conductive nanostructured indium tin oxide (ITO) thin films. Unlike solution deposition methods, the ITO nanoparticles did not deposit herein on the substrate. Instead, they are formed in-situ during the inkjet printing. The layer-by-layer inkjet printing is conducted stepwise, by printing the indium acetate based ink on a glass substrate, then printing the tin acetate-based inkjet ink onto a dry previously printed layer. Next, heat treatment is carried out leading to the formation of nanostructured ITO thin film. The resulting inkjet-printed sustainable transparent three-layer thin films were characteristic of evenly dispersed ITO nanodomains taking the advantage of appropriate wettability and rheological properties of the engineered ink solution. Surprisingly, the electrical resistivity of thin film drastically dropped (874 times) from 43.72 Ω cm for one-layer (48 nm thickness) to 0.05 Ω cm for three-layer (154 nm thickness) thin films, without sensible drop in optical properties (from 88% to 84% in the same order). In view of sustainability, i.e. low-cost clean inkjet printing, green chemicals used, and water-based synthesis, this novel technique opens new avenues for developing sustainable transparent thin films with superior electrical conductivity.

Effect of chromium-doping on structure and opto-electronics properties of nanostructured indium tin oxide thin films

Effect of chromium-doping on structure and opto-electronics properties of nanostructured indium tin oxide thin films

Study of annealing temperatures on electrical conductivity and optical properties of nanostructure ITO film as deposited by ion assisted e-beam evaporation

In this research, the electrical and optical properties of nanostructured Indium Tin Oxide (ITO) films were investigated. The ITO films were deposited by ion assisted e-beam evaporation with the glancing angle deposition (GLAD) technique on commercial ITO substrates, followed by annealing treatment. The results of crystal structure showed that the nanostructured ITO films are polycrystalline and cubic bixbyite structure (222). The sheet resistance and average transmission at the visible region were 12.17 W sq−1 and 89 %, respectively. The films presented the lowest resistivity and good transparency, where the sheet resistance and an average transmittance were 11.21 W sq−1 and 91% after annealing. The omnidirectional characteristics for a wide range of incident angle (0 − 80°) of nanostructured ITO film which was annealed at 300 °C had higher optical transmission than films without annealing. This work eventually proved that the plasma treatments have effectively promoted the performance of the dye-sensitized solar cells and confirmed their potentials in the real-world applications.

The Impact of the Surface Modification on Tin-Doped Indium Oxide Nanocomposite Properties.

This review provides an analysis of the theoretical methods to study the effects of surface modification on structural properties of nanostructured indium tin oxide (ITO), mainly by organic compounds. The computational data are compared with experimental data such as X-ray diffraction (XRD), atomic force microscopy (AFM) and energy-dispersive X-ray spectroscopy (EDS) data with the focus on optoelectronic and electrocatalytic properties of the surface to investigate potential relations of these properties and applications of ITO in fields such as biosensing and electronic device fabrication. Our analysis shows that the change in optoelectronic properties of the surface is mainly due to functionalizing the surface with organic molecules and that the electrocatalytic properties vary as a function of size.

Catalysis on Nanostructured Indium Tin Oxide Surface for Fast and Inexpensive Probing of Antibodies during Pandemics

Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has become a global threat to human health and the economy. Society needs inexpensive, fast, and accurate quantitative diagnostic tools. Here, we report a new approach using a solid-state biosensor to measure antibodies, which does not require functionalization, unlike conventional biosensors. A nanostructured semiconductor surface with catalytic properties was used as a transducer for rapid immobilization and measurement of the antibody. The transducer response was based on solid-state electronics properties. The changes on the surface of the semiconductor induced changes in the direct current (DC) surface resistivity. This was a result of a catalytic chemical reaction on that surface. This new low-cost approach reduced the response time of the measurement significantly, and it required only a very small amount of sample on the microliter scale.

Nanostructure ITO and Get More of It. Better Performance at Lower Cost.

In this paper, we investigated how different growth conditions (i.e., temperature, growth time, and composition) allows for trading off cost (i.e., In content) and performance of nanostructured indium tin oxide (ITO) for biosensing applications. Next, we compared the behavior of these functionalized nanostructured surfaces obtained in different growth conditions between each other and with a standard thin film as a reference, observing improvements in effective detection area up to two orders of magnitude. This enhanced the biosensor’s sensitivity, with higher detection level, better accuracy and higher reproducibility. Results show that below 150 °C, the growth of ITO over the substrate forms a homogenous layer without any kind of nanostructuration. In contrast, at temperatures higher than 150 °C, a two-phase temperature-dependent growth was observed. We concluded that (i) nanowire length grows exponentially with temperature (activation energy 356 meV) and leads to optimal conditions in terms of both electroactive surface area and sensitivity at around 300 °C, (ii) longer times of growth than 30 min lead to larger active areas and (iii) the In content in a nanostructured film can be reduced by 10%, obtaining performances equivalent to those found in commercial flat-film ITO electrodes. In summary, this work shows how to produce appropriate materials with optimized cost and performances for different applications in biosensing.

Broadband dispersive free, large, and ultrafast nonlinear material platforms for photonics

Abstract Broadband dispersion free, large and ultrafast nonlinear material platforms comprise the essential foundation for the study of nonlinear optics, integrated optics, intense field optical physics, and quantum optics. Despite substantial research efforts, such material platforms have not been established up to now because of intrinsic contradictions between large nonlinear optical coefficient, broad operating bandwidth, and ultrafast response time. In this work, a broadband dispersion free, large and ultrafast nonlinear material platform based on broadband epsilon-near-zero (ENZ) material is experimentally demonstrated, which is designed through a novel physical mechanism of combining structural dispersion and material dispersion. The broadband ENZ material is constructed of periodically nanostructured indium tin oxide (ITO) films, and the structure is designed with the help of theoretical predictions combined with algorithm optimization. Within the whole broad ENZ wavelength range (from 1300 to 1500 nm), a wavelength-independent and large average nonlinear refractive index of −4.85 × 10−11 cm2/W, which is enlarged by around 20 times than that of an unstructured ITO film at its single ENZ wavelength, and an ultrafast response speed at the scale of Tbit/s are experimentally reached simultaneously. This work not only provides a new approach for constructing nonlinear optical materials but also lays the material foundation for the application of nanophotonics.

Asymmetric semiconductor nanostructures for particle manipulation

We explore how material selection affects the electromagnetic response of closely positioned asymmetric nanostructures. COMSOL Multiphysics is used to model the system, and the materials studied include gold (Au), gallium arsenide (GaAs), indium tin oxide (ITO), and aluminum zinc oxide (AZO). All materials produce average electric field magnitudes on the order of 10 MV/m. We conclude that the ITO and AZO nanostructures produce the most uniform electric field response over the entire domain of incident wavelengths and that GaAs is least thermally stable in a vacuum environment due to its low heat conductivity.

Perovskite nanowire lasers on low-refractive-index conductive substrate for high-Q and low-threshold operation

Abstract Over the last five years, inorganic lead halide perovskite nanowires have emerged as prospective candidates to supersede standard semiconductor analogs in advanced photonic designs and optoelectronic devices. In particular, CsPbX3 (X = Cl, Br, I) perovskite materials have great advantages over conventional semiconductors such as defect tolerance, highly efficient luminescence, and the ability to form regularly shaped nano- and microcavities from solution via fast crystallization. However, on the way of electrically pumped lasing, the perovskite nanowires grown on transparent conductive substrates usually suffer from strong undesirable light leakage increasing their threshold of lasing. Here, we report on the integration of CsPbBr3 nanowires with nanostructured indium tin oxide substrates possessing near-unity effective refractive index and high conductivity by using a simple wet chemical approach. Surface passivation of the substrates is found out to govern the regularity of the perovskite resonators’ shape. The nanowires show room-temperature lasing with ultrahigh quality factors (up to 7860) which are up to four times higher than that of similar structures on a flat indium tin oxide layer, resulting in more than twofold reduction of the lasing threshold for the nanostructured substrate. Numerical modeling of eigenmodes of the nanowires confirms the key role of low-refractive-index substrate for improved light confinement in the Fabry–Pérot cavity which results in superior laser performance.

Nanostructured front electrodes for perovskite/c-Si tandem photovoltaics.

The rise in the power conversion efficiency (PCE) of perovskite solar cells has triggered enormous interest in perovskite-based tandem photovoltaics. One key challenge is to achieve high transmission of low energy photons into the bottom cell. Here, nanostructured front electrodes for 4-terminal perovskite/crystalline-silicon (perovskite/c-Si) tandem solar cells are developed by conformal deposition of indium tin oxide (ITO) on self-assembled polystyrene nanopillars. The nanostructured ITO is optimized for reduced reflection and increased transmission with a tradeoff in increased sheet resistance. In the optimum case, the nanostructured ITO electrodes enhance the transmittance by ∼7% (relative) compared to planar references. Perovskite/c-Si tandem devices with nanostructured ITO exhibit enhanced short-circuit current density (2.9 mA/cm2 absolute) and PCE (1.7% absolute) in the bottom c-Si solar cell compared to the reference. The improved light in-coupling is more pronounced for elevated angle of incidence. Energy yield enhancement up to ∼10% (relative) is achieved for perovskite/c-Si tandem architecture with the nanostructured ITO electrodes. It is also shown that these nanostructured ITO electrodes are also compatible with various other perovskite-based tandem architectures and bear the potential to improve the PCE up to 27.0%.

Layer-by-Layer Assembled Oxide Nanoparticle Electrodes with High Transparency, Electrical Conductivity, and Electrochemical Activity by Reducing Organic Linker-Induced Oxygen Vacancies.

Solution-processable transparent conducting oxide (TCO) nanoparticle (NP)-based electrodes are limited by their low electrical conductivity, which originates from the low level of oxygen vacancies within NPs and the contact resistance between neighboring NPs. Additionally, these electrodes suffer from the troublesome trade-off between electrical conductivity and optical transmittance and the restricted shape of substrates (i.e., only flat substrates). An oxygen-vacancy-controlled indium tin oxide (ITO) NP-based electrode is introduced using carbon-free molecular linkers with strong chemically reducing properties. Specifically, ITO NPs are layer-by-layer assembled with extremely small hydrazine monohydrate linkers composed of two amine groups, followed by thermal annealing. This approach markedly improves the electrical conductivity of ITO NP-based electrodes by significantly increasing the level of oxygen vacancies and decreasing the interparticle distance (i.e., contact resistance) without sacrificing optical transmittance. The prepared electrodes surpass the optical/electrical performance of TCO NP-based electrodes reported to date. Additionally, the nanostructured ITO NP films can be applied to more complex geometric substrates beyond flat substrates, and furthermore exhibit a prominent electrochemical activity. This approach can provide an important basis for developing a wide range of highly functional transparent conducting electrodes.

Characterization of an amorphous indium tin oxide (ITO) film on a polylactic acid (PLA) substrate

The study presents the deposition of nanostructured indium tin oxide thin films with thicknesses of 10, 30 and 50 nm on the polylactic acid (PLA) substrate by sputtering at \(30{^{\circ }}\hbox {C}\). The absence of ITO peaks on the X-ray diffraction patterns confirms the amorphous state of ITO films and the X-ray photoelectron spectroscopy spectrum validates the deposition of ITO films on the PLA substrate. The results of atomic force microscopy of films exhibit variation in the average roughness of 0.3–1.5 nm when the thickness is increased. It was examined that optical transmission is dependent on the thickness of films which varies from 78 to 87% in the visible spectrum of 400–700 nm and the energy band gap varies from 3.95 to 4.02 eV. The films exhibit the low sheet resistance which is due to the formation of oxygen vacancies and dangling bonds. An increase in transmittance enhances the FOM of the ITO films on the PLA substrate.

Indium⁻Tin⁻Oxide Nanostructures for Plasmon-Enhanced Infrared Spectroscopy: A Numerical Study.

Plasmonic nanoantennas can significantly enhance the light–matter interactions at the nanoscale, and as a result have been used in a variety of applications such as sensing molecular vibrations in the infrared range. Indium–tin–oxide (ITO) shows metallic behavior in the infrared range, and can be used for alternative plasmonic materials. In this work, we numerically studied the optical properties of hexagonal ITO nanodisk and nanohole arrays in the mid-infrared. Field enhancement up to 10 times is observed in the simulated ITO nanostructures. Furthermore, we demonstrated the sensing of the surface phonon polariton from a 2-nm thick SiO2 layer under the ITO disk arrays. Such periodic arrays can be readily fabricated by colloidal lithography and dry etching techniques; thus, the results shown here can help design efficient ITO nanostructures for plasmonic infrared applications.

Fabrication of dual function disposable substrates for spectroelectrochemical nanosensing

In this work, we demonstrate the fabrication of disposable and field deployable nanostructured conductive substrates for dual detection by Surface Enhanced Raman Scattering (SERS) and electrochemistry. Using a one-step potentiostatic process, gold nanostructures were electrodeposited on three substrates: bare indium tin oxide (ITO) electrode, ITO coated with plane gold and carbon fibre (CF) covered with ZnO nanowires (ZnO NWs). Their sensitivities were enhanced by incorporating the plane gold layer and ZnO NWs. The intensity of SERS signals produced on the nanostructured ITO substrates with 0.1 μM quinolinethiol were of the order: nanostructured gold-coated ITO > nanostructured bare ITO. The higher SERS signal on the nanostructured gold-coated ITO was attributed to the coupling between the surface plasmon polariton provided by the gold under layer and the surface plasmon resonance of the Au nanostructures. The ZnO NWs on the carbon fibre provided additional surface area for electrodeposition of gold nanostructures at high density. This led to multiple hotspots formation yielding high SERS signal intensity relative to that on a nanostructured bare carbon fibre. The nanostructured substrates, demonstrated good SERS signal reproducibility with relative standard deviation of 5.19%, 3.28% and 4.53% for Au/ITO, Au/Au-ITO and Au/ZnO-CF respectively. To demonstrate the potential application of these substrates and estimate their sensitivities, they were used to detect melamine by SERS at 1 pM (for Au nanostructures on bare ITO), 1 fM (for Au nanostructured gold-coated ITO), and 0.1 nM (for Au nanostructures on ZnO NWs-coated CF) concentrations with LOD of 0.118 pM, 0.189 fM and 57.4 pM respectively. Taking advantage of the conductive properties of gold nanostructured ITOs, electrochemical detection of 0.1 μM melamine (with an LOD of 0.05 μM) was also demonstrated. Hence, these substrates are potentially useful for SERS and electrochemical-based detection of organic toxicants.

Tuning the deposition parameters for optimizing the faradaic and non-faradaic electrochemical performance of nanowire array-shaped ITO electrodes prepared by electron beam evaporation.

Nanostructured indium tin oxide (ITO) surfaces present an interesting yet unusual combination of properties (high electrical conductivity and optical transparency) at a high surface-to-volume ratio. Thus, previous studies presented nanostructured ITO electrodes as potentially suitable platforms for electrochemical biosensors, but still there is a lack of research on the optimization of preparation methods for such electrodes. We present a systematic study on the properties of nanostructured ITO electrodes prepared by physical deposition, where the substrate temperature was tuned for achieving the best combination of structural properties (namely electrical conductivity and optical transparency) and electrochemical performance. Analysis of faradaic cyclic voltammetry (CV) was performed to determine the electroactive surface area of the samples, and these results were benchmarked against those obtained by non-faradaic CV and Mott-Schottky (MS) analysis. The latter was useful to determine the dependence of some intrinsic features of the semiconductor on the substrate temperature during deposition. The results show that, out of a wide temperature range covering from 200 °C to 500 °C, there is a two-phase temperature-dependent growth, explained by the Stranski-Krastanov and self-catalytic vapor-liquid-solid (VLS) methods, and, on the other hand, that there is an optimal growth temperature at 300 °C that maximizes the electroactive surface area and sensitivity. This means that cost-effective electrodes can be prepared at low temperatures outperforming in terms of electroactive surface area, surface capacitance and sensitivity. As a proof-of-concept, nanostructured ITO electrodes were electrochemically derivatized with aryl diazonium salts (as a first step towards biochemical functionalization), and the performance of the optimized electrodes was tested in a real scenario.

Pulsed Laser Deposition of Indium Tin Oxide Thin Films on Nanopatterned Glass Substrates

Indium tin oxide (ITO) thin films were grown on nanopatterned glass substrates by the pulsed laser deposition (PLD) technique. The deposition was carried out at 1.2 J/cm2 laser fluence, low oxygen pressure (1.5 Pa) and on unheated substrate. Arrays of periodic pillars with widths of ~350 nm, heights of ~250 nm, and separation pitches of ~1100 nm were fabricated on glass substrates using UV nanoimprint lithography (UV-NIL), a simple, cost-effective, and high throughput technique used to fabricate nanopatterns on large areas. In order to emphasize the influence of the periodic patterns on the properties of the nanostructured ITO films, this transparent conductive oxide (TCO) was also grown on flat glass substrates. Therefore, the structural, compositional, morphological, optical, and electrical properties of both non-patterned and patterned ITO films were investigated in a comparative manner. The energy dispersive X-ray analysis (EDX) confirms that the ITO films preserve the In2O3:SnO2 weight ratio from the solid ITO target. The SEM and atomic force microscopy (AFM) images prove that the deposited ITO films retain the pattern of the glass substrates. The optical investigations reveal that patterned ITO films present a good optical transmittance. The electrical measurements show that both the non-patterned and patterned ITO films are characterized by a low electrical resistivity (<2.8 × 10−4). However, an improvement in the Hall mobility was achieved in the case of the nanopatterned ITO films, evidencing the potential applications of such nanopatterned TCO films obtained by PLD in photovoltaic and light emitting devices.

Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films

The optical characteristics and structural features of self-assembling nanostructured indium–tin oxide (ITO) films deposited onto substrates heated above 400°C are studied. Estimations of the distribution profiles of the material and effective refractive index in the films under study are obtained by computer simulation of a medium having spectral dependences of light transmission and reflection coefficients closest to those observed in the experiment. These results are in good agreement with scanning electron microscopy data for these films and make it possible to not only confirm the gradient character of such coatings but also restore some of its features. The further overgrowth of voids in self-assembling nanostructured films by means of the deposition of an additional material amount by magnetron sputtering at room temperature leads to a variation in the effective refractive index profile in them. Thus, it is possible to form transparent conductive films with an efficient refractive index profile adjusted for specific tasks. Adjustment of the refractive index profile in self-assembled ITO films acquires a special value for designing coatings with specified properties by virtue of a limited set of transparent conductive materials.