Optoelectrical properties of junctions electrochemically formed on the surface of n-type CdTe single crystals are reported. The carrier transport process across the junction is controlled by tunnelling through the barrier from one side and by thermal emission followed by recombination at interface states from the opposite side of the junction. The CU characteristics have the shape typical for abrupt junctions and the built-in potential UD = 1.1 V confirms the formation of an np homojunction covered by a thin Te film. The photovoltaic parameters of these cells are: open-circuit voltage 0.42 V short-circuit current density 0.5 to 0.8 mA/cm2, and fill factor 0.54. The spectral response indicate that the thin layer of Te acts only as an optical filter.