Abstract
Positron lifetime measurements give evidence on vacancies in n-type CdTe crystals. The crystals are either nominally undoped or In doped and grown by the travelling-heater method (THM) or the Bridgman technique. In THM CdTe(In) crystals grown using Te as the solvent, the concentration of vacancies correlates with the concentration of In and electrons. This correlation is in aggreement with the model of self-compensation where the In donors are compensated by In-vacancy complexes. In addition to (V Cd−In) − complexes, it is found that positrons are trapped by negative ions.
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