Abstract
In order to solve the problem of the ohmic contact between the crystal surface and the metal electrode in the manufacturing process of the X/γ-ray detector, this paper uses a laser to probe the doping process of In/CdTe crystals in different media. In this experiment, the Traveling Heater Method (THM) is used to obtain CdTe(111) crystals that meet the requirements (ρ >109Ω∙cm). In and Au materials are respectively coated on the surface of the crystal sample by the vacuum thermal evaporation method to obtain the crystal sample meeting the requirements. The high-resistance p-type CdTe crystal of a relatively thick In film is irradiated with nanosecond laser pulses, the In film is used as an n-type doping source and as an electrode after laser irradiation.
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