Abstract
A simple generalisation is given of the theory of photovoltaic effect and its application to Schottky diodes. An analysis of the behaviour of electrons and holes in the space charge region is performed. By introduction of real drift distances of photocarriers in this region a new relation for the short-circuit current is derived. The investigated diodes are prepared by evaporation of gold on polycristalline n-type CdTe layers. It was found, that the spectral dependence of the short — circuit current is in good agreement with the presented theory.
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