Abstract
The fundamental properties are investigated of diodes formed by evaporation of gold on polished and etched surfaces of n-CdTe. I–U characteristics measured at temperatures of ≈ 130 to 300 K and C–U characteristics can be explained by Schottky's theory of the metal–semiconductor contact with recombination in the space charge region. A barrier height of 0.8 to 0.9 eV is determined from the I–U characteristics, and by means of the spectral dependence of photoemission current. An aging effect of the diodes caused by a decrease of donor concentration is ascribed to diffusion of oxygen. The barrier height is probably determined by surface states forming an inversion layer at the metal–semiconductor interface. [Russian Text Ignored]
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
