Investigating the Performance Optimization of Three‐Quantum‐Well High Electron Mobility Transistor Device: Analyzing Operational Characteristics and Gate Voltage Influence

Abstract

Quantum well AlGaN/AlN/GaN high electron mobility transistor (HEMT) devices are a unique kind of semiconductor device that make use of a heterostructure made up of layers of different materials. In this study, the operational characteristics and performance optimization of HEMT devices, with a specific emphasis on the behavior of three‐quantum‐well (3QW) HEMT devices, are explored. The impact of gate voltage is explored and is observed that higher gate voltages result in lower pinch‐off voltages and higher saturation drain currents. In these findings, valuable insights for optimizing circuit designs and ensuring dependable operation across a range of electronic applications are offered. In addition, In this study, the device's ability to detect changes in gate voltage and its nonlinear characteristics is emphasized, providing valuable information for improving the device's performance. Additionally, the benefits of HEMT devices with negative threshold voltages are explored. Devices utilizing AlGaN/AlN/GaN structures demonstrate exceptional performance characteristics, such as rapid switching capabilities, high energy efficiency, and low noise performance, making them well suited for a wide range of scientific and technological applications. Finally, when comparing a QW HEMT device at different drain bias conditions (Vd = 1 V and Vd = 5 V), noticeable variations suggesting improved performance with higher drain bias.