MoS2 Layers Research Articles

Machinability of MoS2 after Oxygen Plasma Treatment under Mechanical Scanning Probe Lithography

The surface of molybdenum disulfide (MoS2) underwent oxygen plasma treatment to enhance its machinability and mitigate the tearing effects commonly associated with mechanical forces on 2D materials. This treatment led to the oxidation of the atoms on the top 1–3 layers of MoS2, resulting in the formation of MoO3 on the surface. During mechanical scanning probe lithography (m-SPL), only the surface oxide layer was uniformly removed, with material accumulation occurring predominantly on one side of the machined area. The resolution of the machining process was significantly enhanced via dynamic lithography while maintaining atomic-level smoothness in the machined area. Importantly, these techniques only removed the surface oxide layer, preserving the integrity of the underlying MoS2 surface, which was pivotal in avoiding damage to the original material structure. This study provided valuable insights and practical guidance for the nanofabrication of transition metal dichalcogenides (TMDCs) nanodevices, demonstrating a method to finely tune the machining of these materials.

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS2 Films via the Degree of Vertical Alignment of Their Constituting Layers

AbstractPulsed‐laser‐deposition (PLD) is used to deposit MoS2 thin films at substrate temperatures (Td) ranging from 25 to 700 °C. A Td = 500 °C is identified as the optimal temperature that yields MoS2 films consisting of highly‐crystallized 2H‐MoS2 phase with a strong (002) preferential orientation, a direct optical bandgap (Eg) of ∼1.4 eV and a strong photoresponse of ∼1500%. Raman spectroscopy revealed that the degree of vertical alignment of MoS2 layers in the films also reaches its maximum at Td = 500 °C. High‐resolution‐transmission‐electron‐microscopy has provided a clear‐cut evidence that the PLD‐MoS2 films predominantly consist of vertically aligned MoS2 layers over all the film thickness of ∼90 nm, enabling those “3D” films to behave as a direct‐bandgap “2D‐MoS2” with exceptional optoelectronic properties. Indeed, at Td = 500 °C, the PLD‐MoS2 based photodetectors (PDs) devices are shown to exhibit the highest responsivity (R) and detectivity (D*) values (125 mA W−1 and 9.2 × 109 Jones, respectively) ever reported for large area (≥ 1 cm2) MoS2‐based PDs operating at a voltage as low as 1 V. For the first time, a constant‐plus‐linear relationship between Eg, R, and D* of the PDs and the degree of vertical alignment of the MoS2 layers is established. Such a correlation is fundamental for the controlled growth of PLD‐MoS2 films and the tuning of their properties in view of their integration with standard large‐scale‐integration processing.

Structural engineering of MoSe2 via interfacial effect and phosphorus doping incorporation for high energy density sodium ion storage

Sodium-ion batteries (SIBs) are gaining increasing attention for the development of electrode materials due to their potential to alleviate the safety concerns and resource scarcity associated with lithium-ion batteries (LIBs). Based on this, the present work, built upon the electrospinning preparation of hollow carbon nanofibers (HCNFs), facilitated the in-situ growth of MoSe2 nanosheets on their surface. Subsequently, an in-situ phosphorization treatment was applied, resulting in phosphorus-doped MoSe2 (P-MoSe2)@HCNFs. The dual-channel inner layer of HCNFs in this structure promotes ion transport and directly interfaces with MoSe2, leading to abundant interfacial effects. The outer layer of MoSe2 serves as the primary redox-active unit for sodium ions, retaining numerous active sites. P doping further optimizes the overall electronic structure of the material. P-MoSe2@HCNFs serves as the anode material in SIBs, demonstrating exceptional reversible specific capacity and rate capabilities. It achieves a remarkable 479.17 mAh g−1 over 500 cycles at 1 A g−1 and 397.01 mAh g−1 over 950 cycles at 10 A g−1, showcasing its outstanding performance. These values significantly surpass those of MoSe2@HCNFs and pure MoSe2, validating the pronounced advantages of the structure we have constructed. Leveraging the outstanding kinetic performance of P-MoSe2@HCNFs, when assembled with Na3V2(PO4)3 as the cathode, the full cell exhibits remarkable sodium storage capability. It achieves a high energy density of up to 194.75 Wh kg−1, providing a feasible solution for the application of transition metal selenides in sodium-ion battery systems.

Highly sensitive ZnO/Ag/BaTiO3/MoS2 hybrid structure-based surface plasmon biosensor for the detection of mycobacterium tuberculosis bacteria

This study presents a novel biosensor utilizing surface plasmon resonance (SPR) technology, comprising og zinc oxide (ZnO), silver (Ag), barium titanate (BaTiO3), and molybdenum disulfide (MoS2). The detection of mycobacterium tuberculosis bacteria was accomplished through the utilization of the hybrid structure. The transfer matrix method (TMM) and finite element method are employed to analyze the suggested surface plasmon resonance (SPR) structure. A comparative analysis has been conducted to evaluate the angular sensitivity between normal blood samples (NBS) and cells affected by tuberculosis (TB). The optimization of the performance of the surface plasmon resonance (SPR) structure involves adjusting the thickness of ZnO, Ag and BaTiO3 layer. The accurate measurement of the full width at half maximum (FWHM), detection accuracy (DA), quality factor and figure of merits (FOM) has also been conducted. The optimal angular sensitivity has been determined to be 10 nm for ZnO, 40 nm for Ag, 1.5 nm for BaTiO3, and one layer of MoS2 with a sensitivity of 525 deg./RIU. Additionally, this study compared the effects on sensitivity of two dimensional materials graphene, WS2 and MoS2. In contrast to the currently available biosensor utilizing surface plasmon resonance (SPR), the suggested structure exhibits higher angular sensitivity. Due to its improved sensitivity, the biosensor under consideration exhibits potential for detecting a wide range of biological analytes and organic compounds.

Temperature-Dependent Frictional Behavior of MoS2 in Humid Environments: Insights from Water Molecule Adsorption and DFT Analyses.

This study investigates the temperature-dependent frictional behavior of MoS2 in humid environments within the context of a long-standing debate over increased friction due to oxidation processes or molecular adsorption. By combining sliding friction experiments and density functional theory (DFT)-based first-principles simulations, it aims to clarify the role of water molecule adsorption in influencing frictional properties of MoS2, addressing the challenge of identifying interfacial bonding behavior responsible for friction in such conditions. Sliding experiments revealed that magnetron-sputtered MoS2 exhibits a reduction in the coefficient of friction (COF) with an increase in temperature from 25 to 100 °C under 20 and 40% relative humidity. This change in the COF obeys the Arrhenius law, presenting an energy barrier of 0.165 eV, indicative of the temperature-dependent nature of these frictional changes and suggests a consistent frictional mechanism. DFT simulations showed that H2O molecules are adsorbed at MoS2 vacancy defects with adsorption energies ranging from -0.56 to -0.17 eV, which align with the experimentally determined energy barrier. Adsorptive interactions, particularly the formation of stable H···S interfacial hydrogen bonds at defect sites, increase the interlayer adhesion and impede layer shearing. TEM analysis confirms that although MoS2 layers align parallel to the sliding direction in humid conditions, the COF remains at 0.12, as opposed to approximately 0.02 in dry air. This demonstrates that parallel layer alignment does not notably decrease the COF, underscoring humidity's significant role in MoS2's COF values, a result also supported by the Arrhenius analysis. The reversibility of the physisorption process, demonstrated by the recovery of the COF in high-temperature humid environments, suggests its dynamic nature. This study yields fundamental insights into MoS2 interfaces for environments with variable humidity and temperature, crucial for demanding tribological applications.

Demystifying the modulation effects of the graphene transport layers on the interlayer charge transfer mechanism and broadband optical properties of MoS2/graphene/WSe2 Van der Waals heterojunctions

2D materials and heterojunctions have extraordinary potential in the field of next-generation integrated photodetectors. Recently, inserting graphene (Gra) into Van der Waals heterojunctions as transport layers has been proven to be an effective method for improving the responsivity and response speed of photodetectors. However, how did the physical mechanisms caused by the insertion (interlayer coupling and electron transfer) regulate its optical properties are unclear. Meanwhile, whether the insertion will modulate the broadband optical properties of the heterojunction should also be carefully verified. In this work, the broadband (1.25–6.50 eV) electronic band structures and exciton properties of MoS2/WSe2 and MoS2/Gra/WSe2 were studied using spectroscopic ellipsometry, meanwhile Raman and PL spectroscopy were used to assist in analysis. We found that graphene insertion not only promote the spontaneous charge transfer from WSe2 to MoS2, but also effectively inject electrons into the MoS2 layer, which benefits the interlayer charge separation and net charge accumulation in MoS2. Moreover, the almost stable CP energies near the band edge represent that graphene insertion does not change the electronic band structures of MoS2/WSe2. Furthermore, due to the increasing effective dielectric screening induced by graphene insertion, the exciton binding energies redshift and the exciton transition energy blueshift consequently.

CVD grown bi-layer MoS2 as SERS substrate: Nanomolar detection of R6G and temperature response

The two-dimensional bi-layer MoS2 is less investigated as compared to monolayer and few-layer (4–6 layers) MoS2 for fundamental aspects and applications such as photodetectors, transistors, etc. In the present work, we prepare triangular-shaped bi-layer MoS2 over SiO2/Si substrate via chemical vapour deposition (CVD) technique for surface enhanced Raman scattering (SERS) based detection of Rhodamine 6G (R6G). We perform density functional theory calculations and spectroscopy studies to investigate the semiconducting feature of bi-layer MoS2. We demonstrate the nanomolar concentration (10-9 M) limit for R6G detection at room temperature using pristine bi-layer MoS2 as SERS substrate. Further, we also examine the cryogenic response of the SERS detection of R6G with bi-layer MoS2 for the first time. The high detection limit of CVD-grown bi-layer MoS2 is ascribed to the charge transfer enabled via vibronic coupling between MoS2 and R6G molecules. This study paves the way for cryogenic-based SERS sensing.

MoS2 based flexible photodetector for broadband visible light photodetection

In recent years, flexible photodetectors (PD) have emerged as a significant innovation with potential applications in healthcare, security, and environmental monitoring. Two-dimensional (2D) layers of metal dichalcogenides MoS2 have gathered significant attention due to their ultrathin thickness and promising applications in the fields of flexible PD. 2H phase of MoS2 micro-flowers were synthesized by facile hydrothermal route. Raman spectra was employed to analyze the quality of grown MoS2 and confirmed with E12g and A1g Raman phonon modes. The micro-flower morphological was verified through FESEM. Subsequently, PD device was fabricated through bar coating method over a flexible polyethylene terephthalate (PET) substrate and Indium Tin oxide (ITO) was employed as an electrode. Photodetection property of the device was tested under dark and illumination. MoS2-microflower PD exhibit good photoresponsivity and detectivity of 1.5 µA/W and 105 Jones at 5 V respectively. Moreover, detector demonstrated remarkable flexibility and exceptional air stability.

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the properties of individual materials as well as their interlayer coupling, thereby exhibiting unique electrical and optical properties. Here, we study and investigate a system consisting entirely of different 2D materials for the implementation of electronic devices that are based on quantum mechanical band-to-band tunneling transport such as tunnel diodes and tunnel field-effect transistors. We fabricated and characterized van der Waals heterojunctions based on semiconducting layers of WSe2 and MoS2 by employing different gate configurations to analyze the transport properties of the junction. We found that the device dielectric environment is crucial for achieving tunneling transport across the heterojunction by replacing thick oxide dielectrics with thin layers of hexagonal-boronnitride. With the help of additional top gates implemented in different regions of our heterojunction device, it was seen that the tunneling properties as well as the Schottky barriers at the contact interfaces could be tuned efficiently by using layers of graphene as an intermediate contact material.

Multiwalled carbon nanotubes decorated with molybdenum sulphide (MoS2@MWCNTs) for highly selective electrochemical picric acid (PA) determination

Nitrophenols are industrially versatile yet environmentally detrimental compounds. Herein, we have synthesised molybdenum sulphide based dichalcogenide supported multiwalled carbon nanotubes i.e. MoS2@MWCNTs electrocatalyst by simple wet chemical method for PA determination. The successful decoration of MoS2 over MWCNTs were confirmed by various characterizations techniques including scanning electron microscopy (SEM) shows MoS2 layers grown on MWCNTs and having average size is –80 nm. Energy dispersive X-ray analysis (EDAX) reveals elements are homogenously distributed in nanocomposite. High resolution-transmission electron microscopy (HR-TEM) shows increase in average diameter after decoration of MoS2 over MWCNTs from 30 nm to 70 nm. The Fourier transform infrared (FT-IR) analysis suggests the presence of Mo-S stretching frequency at 605 cm−1 in addition to hydroxyl, carbonyl, C–C, C–O stretching frequencies are also observed. In Raman spectrum from apart D and G bands, the characteristic intense bands E2g1 and A1g of MoS2 were pointed towards presence of molybdenum and sulphur. The X-ray diffraction (XRD) confirms synthesised electrocatalyst is in hexagonal crystal structure with P63/mmc space group. The X-ray photoelectron spectroscopy (XPS) reveals that for Mo 3d is found to be two characteristics peaks at 231.2 eV and 233.2 eV corresponds to Mo4+ 3d3/2 and 3d5/2 respectively. The peak at 229 eV corresponds to S 2s. Whereas, the signal appears at 162.7 eV, 165 eV, 169 eV and 170 eV shows sulphur is in 2S3/2 and 2S5/2 states. Electrochemical performance was examined by cyclic voltammetry (CV) tests. The Electrocatalyst is highly selective, having appreciable anti-interference property, lower limit of detection (LoD), i.e., 0.5 μM with wide linear range. The low Rct and high k⁰ pointed that MoS2@MWCNTs performed better towards electrochemical detection of PA.

Scalable Large-Area 2D-MoS2/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications.

Two-dimensional (2D) transition-metal dichalcogenides have shown great potential for energy storage applications owing to their interlayer spacing, large surface area-to-volume ratio, superior electrical properties, and chemical compatibility. Further, increasing the surface area of such materials can lead to enhanced electrical, chemical, and optical response for energy storage and generation applications. Vertical silicon nanowires (SiNWs), also known as black-Si, are an ideal substrate for 2D material growth to produce high surface-area heterostructures, owing to their ultrahigh aspect ratio. Achieving this using an industrially scalable method paves the way for next-generation energy storage devices, enabling them to enter commercialization. This work demonstrates large surface area, commercially scalable, hybrid MoS2/SiNW heterostructures, as confirmed by Raman spectroscopy, with high tunability of the MoS2 layers down to the monolayer scale and conformal MoS2 growth, parallel to the silicon nanowires, as verified by transmission electron microscopy (TEM). This has been achieved using a two-step atomic layer deposition (ALD) process, allowing MoS2 to be grown directly onto the silicon nanowires without any damage to the substrate. The ALD cycle number accurately defines the layer number from monolayer to bulk. Introducing an ALD alumina (Al2O3) interface at the MoS2/SiNW boundary results in enhanced MoS2 quality and uniformity, demonstrated by an order of magnitude reduction in the B/A exciton photoluminescence (PL) intensity ratio to 0.3 and a reduction of the corresponding layer number. This high-quality layered growth on alumina can be utilized in applications such as for interfacial layers in high-capacity batteries or for photocathodes for water splitting. The alumina-free 100 ALD cycle heterostructures demonstrated no diminishing quality effects, lending themselves well to applications that require direct electrical contact with silicon and benefit from more layers, such as electrodes for high-capacity ion batteries.

Study of the ZnO/MoS2 heterostructures-based gas sensor for humidity-independent response

In this study, several strategies including coating with a hydrophobic MoS2 layer, UV light illumination, raising temperature, alternating current (AC), and four-probe measurement have been systematically studied to overcome humidity dependence response behavior for the ZnO sensor. Catalyst-free CVD method was used to prepare pure ZnO nanorods and ZnO/MoS2 heterostructures, and the prototypes were then fabricated on the substrates with Pt interdigital (ID) electrodes, respectively. The gas sensing properties of two sensors were systematically investigated. The ZnO/MoS2 heterostructures-based sensor with four-probe measurement operating at 150 °C shows stable responses during a wide humidity variation range. Furthermore, the ZnO/MoS2 sensor obtains excellent sensing performance to NO2 with a high sensitivity of 12.6 %/ppm and high sensor responses at 150 °C and UV light illumination. Additionally, a low theoretical LoD of 6.5 ppb NO2 is achieved for ZnO/MoS2 heterostructures-based sensor.

Switching of n- and p-type doping with partial pressure of oxygen gas on few layers MoS2-field effect transistor

We examined the oxygen adsorption effect on the electric property of the field-effect transistor with an atomic layer MoS2 channel, whose experiment was executed in well-defined ultra-high vacuum conditions and with surface treatment. The threshold voltage change of the Id-Vg curve with the oxygen partial pressure shows n-type doping in the low-pressure range and p-type doping in the high-pressure range. In this report, the Vth vs. oxygen partial pressure uptake curve is well modeled with the Langmuir type adsorption/desorption. The deduced adsorption energy indicates that the adsorbed species are oxygen atoms on the pristine MoS2, suggesting a catalytic behavior of MoS2 for the oxygen reduction reaction. The oxygen adsorption at the S vacant site induces the initial n-type doping. DFT calculation illustrates that, despite the electron transfer from the substrate to the oxygen molecule, the electronic structure change causes the n-type doping.

Molybdenum Disulfide‐based Lossy Mode Resonance Sensors: Uncovering Wider Dynamic Range and High Sensitivity Through Computational Approaches

AbstractUntil now, Surface Plasmon Resonance (SPR) biosensors still rely on gold as their transducer element, and this makes cheap analytical devices difficult to achieve. On the other hand, lossy mode resonance (LMR) sensors offer transducers with more alternative materials due to their flexibility, which can be excited in p‐ and s‐polarized light. In this research it is carried out a numerical investigation using the transfer matrix method on LMR sensor composed of molybdenum disulfide (MoS2) as lossy layer and Cytop as matching layer. The reflectance curves for different thicknesses of MoS2 and Cytop are numerically investigated. The results obtained show that the chip consisting of 250 nm Cytop and 4 layers of MoS2 has a penetration depth 3 times higher than conventional SPR chips. If sensors with two types of polarization are compared, sensors with s‐polarized light have shown higher sensitivity reaching 72.13°/RIU with a wider dynamic range starting from a refractive index of 1.331 to 1.401. In this refractive index range, this sensor has displayed good signal stability where the reduction in resonance dip depth is only ≈6%. These computational results make the proposed structure very promising to be applied in the quantification of biological materials.

Solvent effects on the electrochemical performance of few layered MoS2 electrodes fabricated using FTO substrates

Owing to its exceptional structural, electrical, and optical features, Molybdenum disulphide (MoS2), a two-dimensional (2D) layered material with tuneable bandgap, finds its application in electrochemical supercapacitors for superior energy and power density. Because of their low toxicity and long-term energy storage, the development of MoS2-based supercapacitors is inevitable. The study of solvent effects on the electrochemical performance of a few layered MoS2 using FTO substrates is done for the first time to the best of our knowledge. Exfoliating bulk MoS2 powder in different solvents with variable surface tensions such as Ethanol, Ethylene Glycol (EG), Dimethylformamide (DMF), and Dimethyl Sulfoxide (DMSO) results in the formation of few-layered MoS2 structures. The sample’s structural, optical, and electrochemical behaviours are investigated using x-ray diffraction (XRD), atomic force microscopy (AFM), UV spectroscopy, Fourier transform infrared (FTIR), cyclic-voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS). XRD confirms the formation of a 2D MoS2 film with (002) planes and the optical investigation revealed the variation of layer-dependent bandgap with solvents. We observe both faradaic and non-faradaic charge storage mechanisms in the samples and demonstrate a superior pseudocapacitive behaviour for MoS2 in DMF with a maximum specific capacitance of 34.25 F g−1 at a current density of 1 A/g.

Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Two-dimensional (2D) van der Waals materials in-plane anisotropy, caused by a low-symmetric lattice structure, has considerably increased their applications, particularly in thermoelectric. MoS2 and MoS2/reduced graphene oxide (rGO) thin films were grown on SiO2/Si substrate by atmospheric chemical vapor deposition technique to study the thermoelectric performance. Few layered MoS2 was confirmed by the vibrational analysis and the composition elements are confirmed by the x-ray photoelectron spectroscopy technique. The continuous grains lead to reduced phonon life time in A1g and low activation energy assists to enhance the electrical property. The MoS2/rGO has achieved the highest σ of 22 622 S m−1 at 315 K due to an electron-rich cloud around the electrons in S atoms near the adjacent layer of rGO.

Insight into the Storage Mechanism of Sandwich-Like Molybdenum Disulphide/Carbon Nanofibers Composite in Aluminum-Ion Batteries.

Aluminum-ion batteries (AIBs) have become a research hotspot in the field of energy storage due to their high energy density, safety, environmental friendliness, and low cost. However, the actual capacity of AIBs is much lower than the theoretical specific capacity, and their cycling stability is poor. The exploration of energy storage mechanisms may help in the design of stable electrode materials, thereby contributing to improving performance. In this work, molybdenum disulfide (MoS2) was selected as the host material for AIBs, and carbon nanofibers (CNFs) were used as the substrate to prepare a molybdenum disulfide/carbon nanofibers (MoS2/CNFs) electrode, exhibiting a residual reversible capacity of 53 mAh g-1 at 100 mA g-1 after 260 cycles. The energy storage mechanism was understood through a combination of electrochemical characterization and first-principles calculations. The purpose of this study is to investigate the diffusion behavior of ions in different channels in the host material and its potential energy storage mechanism. The computational analysis and experimental results indicate that the electrochemical behavior of the battery is determined by the ion transport mechanism between MoS2 layers. The insertion of ions leads to lattice distortion in the host material, significantly impacting its initial stability. CNFs, serving as a support material, not only reduce the agglomeration of MoS2 grown on its surface, but also effectively alleviate the volume expansion caused by the host material during charging and discharging cycles.

Magnetism of MoS2 bilayers with intercalated and surface adsorbed Fe

Magnetic thin films composed of two-dimensional van der Waals materials will play an important role in future spintronics devices. Recently, Tuli et al. performed in-situ MOKE measurements of Fe deposited on an MoS2 substrate and found that a magnetic dead layer (MDL) exists up to approximately 2 Å (Tuli et al. (2021)). To understand the origin of the MDL, we investigate MoS2 bilayers with intercalated and surface adsorbed Fe using first-principles calculations. The results show that the Fe-intercalated bilayer MoS2 is more stable than the bilayer MoS2 with surface adsorbed Fe. The Fe-intercalated bilayer MoS2 is non-magnetic and behaves as the MDL. The systematic investigation of variation in the inter-layer distance between the intercalated Fe layer and surface of MoS2 layer reveals that the strong hybridization between Fe and S is the origin of the MDL. We also show that further intercalation of Fe makes the film magnetic. The results provide a deep understanding of the MDL in two-dimensional van der Waals magnetic materials.

Single-atom iridium doped ultrathin MoS2 layers as a highly efficient catalyst for the hydrodeoxygenation of 5-hydroxymethylfurfural

The catalytic transformation of biomass-derived 5-hydroxymethylfurfural (HMF) to 2,5-dimethylfuran (DMF) is of great importance within the context of biomass valorization, but remains a major challenge due to the complicated reaction networks. Herein, single-atom Ir doped ultrathin MoS2 layers were synthesized and used as catalyst for the hydrodeoxygenation of HMF, yielding 96.5% of DMF. The single atomic structure of Ir was determined by X-ray diffraction (XRD), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), X-ray absorption fine structure analysis (XAFS), and X-ray photoelectron spectroscopy (XPS). Furthermore, the Ir doped MoS2 catalyst showed excellent stability and did not deactivate after five reaction cycles. This work expands the applications of single-atom catalysts and introduces a new and highly efficient catalyst for the sustainable production of DMF.

Insulating 6,6-Phenyl-C61-butyric Acid Methyl Ester on Transition-Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties.

In this study we develop a strategy to insulate 6,6 -Phenyl C61 butyric acid methyl ester (PCBM) on the basal plane of transition metal dichalcogenides (TMDs). Concretely single layers of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2 and ultrathin MoO2 and WO2 were grown via chemical vapor deposition (CVD). Then, the thiol group of a PCBM modified with cysteine reacts with the chalcogen vacancies on the basal plane of TMDs, yielding PCBM-MoS2, PCBM-MoSe2, PCBM-WS2, PCBM-WSe2, PCBM-WTe2, PCBM-MoO2 and PCBM-WO2. Afterwards, all the hybrid materials were characterized using several techniques, including XPS, Raman spectroscopy, TEM, AFM, and cyclic voltammetry. Furthermore, PCBM causes a unique optical and electrical impact in every TMDs. For MoS2 devices, the conductivity and photoluminescence (PL) emission achieve a remarkable enhancement of 1700 % and 200 % in PCBM-MoS2 hybrids. Similarly, PCBM-MoTe2 hybrids exhibit a 2-fold enhancement in PL emission at 1.1 eV. On the other hand, PCBM-MoSe2, PCBM-WSe2 and PCBM-WS2 hybrids exhibited a new interlayer exciton at 1.29-1.44, 1.7 and 1.37-154 eV along with an enhancement of the photo-response by 2400, 3200 and 600 %, respectively. Additionally, PCBM-WTe2 and PCBM-WO2 showed a modest photo-response, in sharp contrast with pristine WTe2 or WO2 which archive pure metallic character.