Abstract
We examined the oxygen adsorption effect on the electric property of the field-effect transistor with an atomic layer MoS2 channel, whose experiment was executed in well-defined ultra-high vacuum conditions and with surface treatment. The threshold voltage change of the Id-Vg curve with the oxygen partial pressure shows n-type doping in the low-pressure range and p-type doping in the high-pressure range. In this report, the Vth vs. oxygen partial pressure uptake curve is well modeled with the Langmuir type adsorption/desorption. The deduced adsorption energy indicates that the adsorbed species are oxygen atoms on the pristine MoS2, suggesting a catalytic behavior of MoS2 for the oxygen reduction reaction. The oxygen adsorption at the S vacant site induces the initial n-type doping. DFT calculation illustrates that, despite the electron transfer from the substrate to the oxygen molecule, the electronic structure change causes the n-type doping.
Published Version
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