Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Abstract

Two-dimensional (2D) van der Waals materials in-plane anisotropy, caused by a low-symmetric lattice structure, has considerably increased their applications, particularly in thermoelectric. MoS2 and MoS2/reduced graphene oxide (rGO) thin films were grown on SiO2/Si substrate by atmospheric chemical vapor deposition technique to study the thermoelectric performance. Few layered MoS2 was confirmed by the vibrational analysis and the composition elements are confirmed by the x-ray photoelectron spectroscopy technique. The continuous grains lead to reduced phonon life time in A1g and low activation energy assists to enhance the electrical property. The MoS2/rGO has achieved the highest σ of 22 622 S m−1 at 315 K due to an electron-rich cloud around the electrons in S atoms near the adjacent layer of rGO.