Millimeter-wave Monolithic Integrated Circuit Research Articles

A $W$-Band Monolithic Integrated Active Hot and Cold Noise Source

For application in radiometry or noise measurement systems, an integrated active hot-cold load (AHCL) operating in the W-band (75-110 GHz) is presented and realized as monolithic millimeter-wave integrated circuit (MMIC). It makes use of a novel circuit topology that employs only a single active noise source and monolithic integrated switches to provide a cold and a hot noise reference temperature. The AHCL provides a measured cold temperature of only 230 K and a hot temperature of 860 K around 94 GHz, thus enabling two-point radiometric calibration and absolute power measurements. The noise source of the AHCL has been fabricated as a two-port test structure too. In that configuration, it has been measured as a low-noise amplifier with a noise figure of 2.5 dB at 94 GHz proving its good noise performance. As a standalone active cold load (ACL), an excellent noise power of only 190 K at 93 GHz is achieved. The AHCL and ACL MMICs have been fabricated in 100-nm gate-length metamorphic high electron-mobility transistor technology.

243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of <0.5 dB at 243 GHz. By applying the 50 nm gate-length process, a four-stage cascode amplifier module achieved a small-signal gain of 30.6 dB at 243 GHz and more than 28 dB in the bandwidth from 218 to 280 GHz. A second amplifier module, based on the 35-nm mHEMT technology, demonstrated a considerably improved gain of 34.6 dB at 243 GHz and more than 32 dB between 210 and 280 GHz. At the operating frequency, the two broadband low-noise amplifier modules achieved a room temperature noise figure of 5.6 dB (50 nm) and 5.0 dB (35 nm), respectively.

W-band active loads and switching front-end MMICs for radiometer calibration

A millimeter-wave monolithic integrated circuit consisting of a W-band (75–100 GHz) single-pole-five-throw (SP5T) switch and multiple internal active and passive loads for radiometer calibration was designed and manufactured in a low noise 50 nm GaAs metamorphic high electron mobility transistor technology. This highly compact and integrated front-end device for radiometer systems is capable of ultra fast switching between two identical input ports (e.g. for polarimetric applications) and three internal calibration references. It allows an accurate multi-load calibration with noise temperatures between 220 and 1750 K at the output of the device. Compared to conventional calibration methods this marks a substantial advantage in terms of size, mass, power consumption, complexity, and repetition rate.

Uniplanar Millimeter-Wave Log-Periodic Dipole Array Antenna Fed by Coplanar Waveguide

A uniplanar millimeter-wave broadband printed log-periodic dipole array (PLPDA) antenna fed by coplanar waveguide (CPW) is introduced. This proposed structure consists of several active dipole elements, feeding lines, parallel coupled line, and the CPW, which are etched on a single metallic layer of the substrate. The parallel coupled line can be optimized to act as a transformer between the CPW and the PLPDA antenna. Meanwhile, this transform performs the task of a balun to achieve a wideband, low cost, low loss, simple directional antenna. The uniplanar nature makes the antenna suitable to be integrated into modern printed communication circuits, especially the monolithic millimeter-wave integrated circuits (MMIC). The antenna has been carefully examined and measured to present the return loss, far-field patterns, and antenna gain.

A W-Band MMIC Radar System for Remote Detection of Vital Signs

In medical and personal health systems for vital sign monitoring, contact-free remote detection is favourable compared to wired solutions. For example, they help to avoid severe pain, which is involved when a patient with burned skin has to be examined. Continuous wave (CW) radar systems have proven to be good candidates for this purpose. In this paper a monolithic millimetre-wave integrated circuit (MMIC) based CW radar system operating in the W-band (75–110 GHz) at 96 GHz is presented. The MMIC components are custom-built and make use of 100 nm metamorphic high electron mobility transistors (mHEMTs). The radar system is employing a frequency multiplier-by-twelve MMIC and a receiver MMIC both packaged in split-block modules. They allow for the determination of respiration and heartbeat frequency of a human target sitting in 1 m distance. The analysis of the measured data is carried out in time and frequency domain and each approach is shown to have its advantages and drawbacks.

The MIMIC Program—A Retrospective

It has now been more than a quarter of a century since the U.S. Department of Defense (DoD) began its microwave and millimeter-wave monolithic integrated circuits (MIMIC) program. During that time, the Cold War ended and, as a result, there was a dramatic consolidation of defense companies. Many engineers, scientists, and others who participated in the program have changed companies, changed jobs, retired and, in some cases, died. The legacy of the program, however, remains: the establishment of the capabilities, infrastructure, and knowledge necessary to design and produce GaAs MMICs for nearly any application with high yield, at low cost, and possessing the specific performance and reliability characteristics required for their use in a huge number of system applications, both military and commercial [1][3]. This, in turn, has resulted in the United States' becoming the world leader in GaAs MMIC technology, a position that it still holds. The program played a major role in disproving the once popular statement that “GaAs is the material of the future and always will be.” This article describes the beginnings of the program and the strategy it used to achieve its goals. It also summarizes what has been accomplished and offers some advice based on the experience gained over the course of the program.

Wireless multi-gigabit data transmission using active MMIC components at 220 GHz

In this paper we present a wireless data link for multi-gigabit transmission in the mmW frequency range. The link is realized using waveguide modules based on fully integrated 50 nm metamorphic high electron mobility transistor (mHEMT) transmit and receive millimeter wave monolithic integrated circuits (MMICs) and provides transmission of data rates up to 12.5 Gbit/s modulated on a 220 GHz carrier. The receiver input sensitivity is characterized down to values of −38.6 dBm and shows an error rate of 3.0 × 10−9. Measurements using a coherent link setup show bit error rates better than 1.6 × 10−9 for a data rate of 10 Gbit/s and a transmission distance of 2 m. For a distance of 20 m a real-time Digital Video Broadcasting – Satellite (DVB-S) television transmission is realized. The signal quality after the wireless link is sufficient for a commercial DVB-S receiver to display the television programs.

밀리미터파 응용을 위한 우수한 성능의 MMIC Star 혼합기

본 논문에서는 밀리미터파 응용에서 사용 가능한 우수한 성능의 MMIC (Millimeter-wave Monolithic Integrated Circuit) star 혼합기를 구현하였다. MMIC star 혼합기를 구현하기 위하여 PHEMT (pseudomorphic high electron mobility transistor) 공정 기반의 소오스와 드레인 단자를 연결한 쇼트키 (Schottky) 다이오드를 사용하였다. 혼합기의 측정 결과 LO 주파수가 75 GHz이며 전력이 10 dBm 인 경우, 81 GHz에서 86 GHz의 RF 주파수 범위에서 평균 13 dB의 변환손실 특성을 얻었다. RF-LO 격리도 특성은 30 dB 이상의 결과를 얻었으며 약 4 dBm의 P1 dB 특성을 얻었다. 전체 칩의 크기는 0.8 mm <TEX>${\times}$</TEX> 0.8 mm이다. In this paper, we reported on a high performance MMIC star mixer for millimeter-wave applications. The star mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process on 2 mil thick GaAs substrate. The average conversion loss of 13 dB was measured in the RF frequency range of 81 GHz to 86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-LO isolation characteristics are greater than 30 dB and the input 1-dB compression are approximately 4 dBm. The total chip size is 0.8 mm <TEX>${\times}$</TEX> 0.8 mm.

Small-signal modeling approach to 0.1-μm metamorphic HEMTs for W-band coplanar MMIC amplifier design

We present an accurate and reliable modeling method for designing the W-band (75–110 GHz) small-signal millimeter-wave monolithic integrated circuit (MMIC) amplifiers with the GaAs-based 0.1-μm metamorphic high electron-mobility transistors (MHEMTs). For this, we propose an improved process control monitoring (PCM) pattern layout for the MHEMT modeling and a small-signal equivalent circuit model of 17 elements accounting for the feedback capacitance ( C pgd) and output conductance time delay ( τ ds). The modeling technique adopts a gradient optimizer with the initial values of the extrinsic parameter set determined from the cold-FET measurement avoiding the forward gate-biasing in a frequency range of 0.5–65 GHz and the intrinsic parameter set obtained at an operating hot-FET condition in our W-band design frequency range. On the basis of the proposed small-signal equivalent circuit model, we design and fabricate 1- and 2-stage W-band MMIC amplifiers using the MHEMTs (30-μm gate width, 2 gate fingers) and a coplanar waveguide-based MMIC process. The measurements of the fabricated MMIC amplifiers show an excellent agreement with simulation data in the design frequency range.

A 120–145 GHz Heterodyne Receiver Chipset Utilizing the 140 GHz Atmospheric Window for Passive Millimeter-Wave Imaging Applications

For passive mm-wave imaging applications, broadband mm-wave receivers functioning within atmospheric windows are highly desired. Within this paper, a heterodyne receiver chipset utilizing the 140 GHz atmospheric window is presented. The heterodyne chipset is based on two different millimeter-wave monolithic integrated circuits (MIMICs). One is the receiver MIMIC including a low-noise amplifier, a down-conversion mixer, a frequency multiplier and a local oscillator buffer amplifier together with a local oscillator distribution network. The other is a voltage-controlled oscillator (VCO) working in the 35 GHz frequency range to generate the local oscillator signal for the receiver (down-converter) chip. The process technology chosen to realize the chipset is a 100 nm gatelength metamorphic InAlAs/InGaAs high electron mobility transistor (HEMT) technology on 50 μm thick and 4 inch diameter GaAs substrates. The chips are utilizing a grounded coplanar waveguide (GCPW) technology. For an operation frequency band from 120 to 145 GHz, the receiver demonstrates a flat conversion gain between -1 and +2 dB with a power consumption of 120 mW. The VCO is tuneable from 31 to 37 GHz with associated output power levels from -2 to +1 dBm. Detailed descriptions of the individual building blocks are given and measured results are presented for the building blocks as well as for the receiver.

High‐performance W‐band MMIC mixer module using GaAs metamorphic HEMT

AbstractIn this letter, we report on a high‐performance 94‐GHz millimeter‐wave monolithic integrated circuit (MMIC) mixer module using 0.1‐μm metamorphic high electron mobility transistors. A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO‐RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW‐waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 and 9.5 dB, and LO‐RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W‐band (75–110 GHz) MMIC mixers. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:815–817, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25081

E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology

E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (ƒmax) of 550GHz and a current-gain cutoff frequency (ƒT) of 450GHz at room temperature, which is first experimental demonstration that ƒmax as high as 550GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3dB with an associated gain of 20.6dB at 79GHz.

A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology

A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.

10-Gbit/s Wireless Link Using InP HEMT MMICs for Generating 120-GHz-Band Millimeter-Wave Signal

We have developed a 120-GHz-band wireless link whose maximum transmission data rate is 11.1 Gbit/s. The wireless link uses millimeter-wave monolithic integrated circuits (MMICs) for the generation of a 120-GHz-band millimeter-wave wireless signal. The MMICs were fabricated using 0.1-mum-gate InP-HEMTs and coplanar waveguides. The wireless link can handle four kinds of data rate for OC-192 and 10-Gbit Ethernet standards with and without forward error correction (FEC). We succeeded in the error-free transmission of a 10-Gbit/s signal over a distance of 800 m. The introduction of FEC into the 120-GHz-band wireless link decreased the minimum received power for error-free transmission, and improved the reliability of the link.

AMiBA: BROADBAND HETERODYNE COSMIC MICROWAVE BACKGROUND INTERFEROMETRY

The Y. T. Lee Array for Microwave Background (AMiBA) has reported the first results on the detection of galaxy clusters via the Sunyaev–Zel'dovich effect. The objectives required small reflectors in order to sample large-scale structures (20'), while interferometry provided modest resolutions (2'). With these constraints, we designed for the best sensitivity by utilizing the maximum possible continuum bandwidth matched to the atmospheric window at 86–102 GHz, with dual polarizations. A novel wide-band analog correlator was designed that is easily expandable for more interferometer elements. Monolithic millimeter-wave integrated circuit technology was used throughout as much as possible in order to miniaturize the components and to enhance mass production. These designs will find application in other upcoming astronomy projects. AMiBA is now in operation since 2006, and we are in the process to expand the array from seven to 13 elements.

High-Performance 94-GHz Single-Balanced Diode Mixer Using Disk-Shaped GaAs Schottky Diodes

We present a high-performance 94-GHz single-balanced monolithic millimeter-wave integrated-circuit (MMIC) mixer using the disk-shaped GaAs Schottky diodes grown on an n/n+ epitaxial structure. Due to the superior characteristics of the GaAs diodes with high diode-to-diode uniformity, the mixer shows a conversion loss of 5.5 dB at 94 GHz, a 1-dB compression point ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-dB</sub> ) of 5 dBm, and high local-oscillator to radio-frequency isolation above 30 dB in an RF frequency range of 91-97 GHz. To our knowledge, the fabricated mixer shows the best performance in terms of conversion loss at 94 GHz and <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-dB</sub> among the W-band MMIC mixers without amplifier circuits.

94-GHz Log-Periodic Antenna on GaAs Substrate Using Air-Bridge Structure

We fabricated a compact, 94-GHz log-periodic planar antenna on GaAs substrate. We used millimeter-wave monolithic integrated circuit (MMIC) process technology to fabricate the on-chip antenna. An air-bridge crossover is used to replace the conventional bonded structure for crisscross connection, which is compatible with active devices and circuits. The fabricated antenna chip size is 1.2 times 2.6 mm2 . Measurement results show that this antenna can operate from 87 to 99.5 GHz with its return loss better than -10 dB. At 94 GHz, the log-periodic antenna has a return loss of -11 dB and 4.8 dBi of gain.

Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 mum mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 mum thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.

In As ∕ Al Sb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications

In As ∕ Al Sb high-electron-mobility transistor technology has transitioned from research to development stages in recent years. Development efforts at Northrop Grumman Space Technology, in collaboration with the Naval Research Laboratory and the University of California, Los Angeles, have focused on X-band and W-band low-noise amplifier monolithic millimeter-wave integrated circuits fabricated for applications requiring ultralow-power dissipation. The materials for the circuits discussed in this article were grown at Northrop Grumman Space Technology on 3-in.-diameter semi-insulating GaAs substrates by molecular-beam epitaxy. Atomic-force microscopy of the as-grown surface on each wafer showed that the rms roughness for all of the wafers ranged between 0.5 and 3.5nm, and this range of roughness was fully compatible with the fabrication process. The high electron mobility that InAs can provide was achieved reproducibly in these materials. It was maintained almost always above 25000cm2V−1s−1, and in several cases even exceeded 30000cm2V−1s−1. The associated electron sheet concentration ranged between 1.2×1012 and 1.8×1012cm−2. These combined mobilities and sheet concentrations gave corresponding sheet resistances in the range of 170±40Ω∕sq, with nonuniformity below 6% over these 3-in.-diameter wafers. These materials characteristics enabled successful fabrication of several recently published X-band and W-band low-noise amplifier circuits, and figures of merit for the circuits that were made specifically from these materials are referenced in this article.

Structure and Magnetism of Ba-Hexaferrite Films Grown on Single Crystal 6-H SiC With Graduated Interfacial MgO Buffer Layers

M-type barium hexaferrite films were processed by pulsed laser deposition on single-crystal 6-H silicon carbide substrates. MgO buffer and barrier layers were introduced to improve the film quality. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, vibrating sample magnetometry, and ferromagnetic resonance (FMR). X-ray thetas-2thetas diffraction measurements indicated a strong (0, 0, 2n) crystallographic alignment. The magnetization of the BaM film is comparable to bulk values (4piM <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> ~4320 G). A derivative power FMR linewidth of 500 Oe was measured at 55 GHz for the as-deposited films. This paper explores a potential next generation of microwave and millimeter-wave monolithic integrated circuit technology based upon a wide band-gap semiconducting material