Abstract

It has now been more than a quarter of a century since the U.S. Department of Defense (DoD) began its microwave and millimeter-wave monolithic integrated circuits (MIMIC) program. During that time, the Cold War ended and, as a result, there was a dramatic consolidation of defense companies. Many engineers, scientists, and others who participated in the program have changed companies, changed jobs, retired and, in some cases, died. The legacy of the program, however, remains: the establishment of the capabilities, infrastructure, and knowledge necessary to design and produce GaAs MMICs for nearly any application with high yield, at low cost, and possessing the specific performance and reliability characteristics required for their use in a huge number of system applications, both military and commercial [1][3]. This, in turn, has resulted in the United States' becoming the world leader in GaAs MMIC technology, a position that it still holds. The program played a major role in disproving the once popular statement that “GaAs is the material of the future and always will be.” This article describes the beginnings of the program and the strategy it used to achieve its goals. It also summarizes what has been accomplished and offers some advice based on the experience gained over the course of the program.

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