The halogen-silicon system has been well-studied over the years due to the prevalent use of halogen-based plasmas for silicon device processing and for its role in fostering chemical reactions leading to the functionalization of silicon surfaces. Most recently, our work has demonstrated the effectiveness of a single monatomic layer of chlorine to resist the adsorption of chlorinated molecular dopant precursor gases and support the epitaxial growth of silicon from a molecular beam source. We have leveraged these findings to realize atomic-scale quantum devices in which we are able to confine dopant atoms to atomically-precise regions of a nominal single plane of silicon with sufficient density to support ohmic conduction across these structures at mK temperatures. Here, I will discuss our process of using BCl3 to obtain single layers of heavily boron-doped silicon with an extremely high active carrier concentration (> 1014 cm-2), as well as the role of the chlorinated silicon surface in supporting the growth of high quality, epitaxial silicon capping layers.
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