Hole Carrier Mobility Research Articles

Disentangling the Optoelectronic Behavior of Lead Iodide Governed by Two-Dimensional Electron Confinement.

We present a joint experimental and theoretical study for complete spectroscopic characterization and optoelectronic properties of lead iodide. Experimentally, we combine X-ray diffraction experiments to elucidate the structure with photoelectron spectroscopy to explore its electronic structure. Computationally, simulations are performed in the frame of density functional theory. We show that PbI2 presents a two-dimensional layered structure and exhibits a large transient photocurrent effect under visible light illumination, which are compatible with the surface photovoltage scenario. The transient photocurrent has an extremely long lifetime: when the sample is lightened with visible light, it shows very long relaxation times and, consequently, huge charge carrier diffusion lengths. We explain this anomalous behavior with the slow carrier mobility of holes and electrons caused by the 2D electron confinement in the layered material. Our results can be used as a simple model for understanding the optoelectronic properties of more complex 2D hybrid perovskites.

Low-voltage organic field-effect transistors by using solution-processable high-κ inorganic-polymer hybrid dielectrics

Organic field-effect transistors (OFETs) incorporating hybrid high-κ inorganic Al2O3 and polymer dielectrics, including polyvinyl alcohol (PVA), polystyrene (PS), or polymethyl methacrylate (PMMA), through solution-processing techniques were fabricated. The analyses revealed that the high surface energy and hydrophilicity property of Al2O3 and PVA, and the relatively hydrophobic property of PS surface, hindered the performance of corresponding OFETs. The Al2O3/PMMA-based OFET achieved the optimized performance, with a threshold voltage of −2.7 V, a hole carrier mobility of 0.056 cm2/Vs, and a current on/off ratio of 1.0 × 104 at a low operating voltage of −5 V. Through analyzing the characteristics of leakage current, capacitance, contact resistance, and trap density of OFETs, we found that the PMMA-engaged films possessed the optimized electrical properties. The introduction of PMMA eliminated the interfacial trapping, thereby lowering the threshold voltage and enhancing the performance of the device. The COMSOL Multiphysics simulation was conducted to confirm the physical mechanism. The strategy of utilizing Al2O3/PMMA hybrid dielectric could simultaneously ensure the low operating voltage and good performance of OFET, while guaranteeing the low leakage current by the thick PMMA.

2D Janus TeMoZAZ’ (A = Si,Ge; Z,Z’ = N, P, As; Z ≠ Z'): First‐Principles Insight into the Electronics, and Piezoelectric Properties

AbstractJanus materials possess a diverse array of properties resulting from the breaking of mirror and inversion symmetries, holding significant potential for nanodevices. This study explores the novel TeMoZAZ' (A = Si,Ge; Z,Z' = N, P, As; Z ≠ Z') monolayers derived from the MoA2Z4 monolayer. Utilizing first‐principles calculations, the stability, electronic, transport, mechanical, and piezoelectric properties of the TeMoZAZ' monolayers are investigated. Among the 12 investigated structures, only five‐ TeMoNSiP, TeMoNSiAs, TeMoPSiAs, TeMoAsSiP and TeMoAsGeP monolayers‐ are found to be stable. The electronic properties analysis reveals metallic behavior in the TeMoNSiAs monolayer, while the remaining structures exhibit indirect or direct band gap semiconductor properties. Futher examination of the semiconducting monolayers indentifies the TeMoAsSiP monolayer with notably high hole carrier mobility along the y‐direction, reaching up to 3622.33 cm2 s−1 V−1. Moreover, investigation into the piezoelectric properties of these four semiconductor structures suggests their suitability for diverse applications in piezoelectric devices. Additionally, the effects of biaxial strain on the electronic and piezoelectric properties of these four semiconductor structures are explored. These findings propose a novel approach for designing 2D Janus materials, expanding the repertoire of 2D MA2Z4‐based Janus family and offering promising candidates for optoelectronic devices, wearable devices, and electromechanical systems.

Performance improvement of planar silicon nanowire field effect transistors via catalyst atom doping control

Catalytic growth of silicon nanowires (SiNWs), mediated by metallic droplet, provide ideal quasi-1D channels to construct high performance field effect transistor (FET). However, the incorporation of catalytic metal atoms into SiNWs channels has significant impact on the FET characteristics, and thus needs to be better understood and controlled to fulfil its potential for high performance electronics. In this work, we focus on the effect of the incorporation of indium (In) catalytic atoms into planar SiNWs, grown via an in-plane solid-liquid-solid (IPSLS) mechanism, on the FET device performance. It is found that the initial high concentration of p-type In dopants in the as-grown SiNWs led to an equivalent boron (B) doping of 5×1018 cm−3. However, a simple step-wise annealing in oxygen at different temperatures, varied from 620 °C to 920 °C, can help to out-diffuse the dissolved In atoms into the surface SiO2 layer, and reduce the In concentrations down to <5×1017 cm−3, as verified by atom-probe tomography (APT) and four-point-probe measurements. This effective dopant control enables a remarkable device performance improvement of the Schottky barrier FETs, built upon an orderly array of parallel SiNWs of approximately 25 nm in diameter, where the current ratio (Ion/Ioff) has been substantially boosted from 105 to 108, while the subthreshold swing (SS) reduced from 400 mV/dec down to ∼100 mV/dec, with a hole carrier mobility increased from 10 to ∼75 cm2 V−1 s−1 as extracted according to a finite element analysis. These results pave the way for the employment of the catalytic IPSLS SiNWs to serve as high quality 1D channels for high-performance SiNWs-based electronics and sensors.

Two-Dimensional Sc2CCl2/XSe2(X=Mo, Pt) van der Waals Heterojunctions: Promising Photocatalytic Hydrogen Evolution Materials.

In the field of photocatalysis, new heterojunction materials are increasingly explored to achieve efficient energy conversion and environmental catalysis under visible light and sunlight. This paper presents a study on two newly constructed two-dimensional van der Waals heterojunctions, Sc2CCl2/MoSe2 and Sc2CCl2/PtSe2, using density-functional theory. The study includes a systematic investigation of their geometrical structure, electronic properties, and optical properties. The results indicate that both heterojunctions are thermodynamically, kinetically, and mechanically stable. Additionally, Bader charge analysis reveals that both heterojunctions exhibit typical type II band properties. However, the band gap of the Sc2CCl2/MoSe2 heterojunction is only 1.18 eV, which is insufficient to completely cross the reduction and oxidation (REDOX) potential of 1.23 eV, whereas the band gap of Sc2CCl2/PtSe2 heterojunction is 1.49 eV, which is theoretically capable for water decomposition. The subsequent calculation of the Sc2CCl2/PtSe2 heterojunction demonstrate excellent hole carrier mobility and high efficiency light absorption in the visible light range, facilitating the separation of photogenerated electrons and holes. More importantly, Sc2CCl2/PtSe2 vdW type II heterojunction can achieve full water decomposition from pH 1 to pH 4, and its thermodynamic feasibility is confirmed by Gibbs free energy results. The aim of this study is to develop materials and analyses that will result in optoelectronic devices that are more efficient, stable, and sustainable.

Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility

In this work, a fully flexible graphene field-effect transistor with high carrier mobility is reported. Patterned high-quality and uniform single-layer graphene films are successfully realized by combining the selective growth on a patterned copper foil and the direct transfer method to minimize degradation factors. The selectively grown single-layer graphene is directly transferred to the target substrate through the deposition of poly-para-xylylene (Parylene) C. The quality of the graphene films is confirmed by Raman spectroscopy. The analysis reveals that the use of Parylene C as the substrate, gate dielectric, and encapsulation layer has the advantage of reducing the scattering by the optical phonons and charge puddles. The estimated residual carrier density is 1.72 × 1011 cm−2, and the intrinsic hole and electron carrier mobilities are found to be as high as 10 260 and 10 010 cm2 V−1 s−1, respectively. This study can pave the way for the development and mass production of high-performance and fully flexible graphene electronics.

Ultrahigh power factor and excellent solar efficiency in two-dimensional hexagonal group-IV–V nanomaterials

The mesmerizing physical properties of two-dimensional (2D) nanomaterials have resulted in their enormous potential for high-power solar energy conversion and long-term stability devices. The present work systematically investigated the fundamental properties of monolayered 2D group-IV–V materials using a combined approach of first-principles calculations and Boltzmann transport theory, specifically the thermoelectric and optical properties, for the first time. The structural and lattice dynamics analysis disclosed the energetic, dynamical, and mechanical stabilities of 17 out of 25 considered materials. The electronic properties’ calculation shows that all the stable materials exhibit a semiconducting nature. Additionally, the energy–momentum relation in a few systems reveals the quartic Mexican-hat-like dispersion in their valence band edges. Owing to the larger depth of Mexican-hat dispersion and the larger height of density step function modes, the hole carrier mobilities of SnN (761.43 m2/Vs), GeN (422.80 m2/Vs), and SiN (108.90 m2/Vs) materials were found to be significantly higher than their electron mobilities at room temperature. The achieved high Seebeck coefficient and electrical conductivity at room temperature result in excellent thermoelectric power factors for GeN (3190 mW/mK2), SiN (1473 mW/mK2), and CAs (774 mW/mK2) materials, manifesting their potential for thermoelectric devices. Further, the calculated optical and solar parameters demonstrate an exceptionally high value (27.25%) of theoretical limits of power conversion efficiency for the SnBi material, making it a suitable candidate as a light-absorbing material in solar cell devices. The present theoretical work filters out the potential 2D group-IV–V materials for solar and heat energy-harvesting devices.

How Biorecognition Affects the Electronic Properties of Reduced Graphene Oxide in Electrolyte‐Gated Transistor Immunosensors

AbstractAmbipolar electrolyte‐gated transistors (EGTs) based on reduced graphene oxide (rGO) have been demonstrated as ultra‐sensitive and highly specific immunosensors. However, the physics and chemistry ruling the device operation are still not fully unraveled. In this work, the aim is to elucidate the nature of the observed sensitivity of the device. Toward this aim, a physical–chemical model that, coupled with the experimental characterization of the rGO‐EGT, allows one to quantitatively correlate the biorecognition events at the gate electrode and the electronic properties of rGO‐EGT is proposed. The equilibrium of biorecognition occurring at the gate electrode is shown to determine the apparent charge neutrality point (CNP) of the rGO channel. The multiparametric analysis of the experimental transfer characteristics of rGO‐EGT reveals that the recognition events modulate the CNP voltage, the excess carrier density Δn, and the quantum capacitance of rGO. This analysis also explains why hole and electron carrier mobilities, interfacial capacitance, the curvature of the transfer curve, and the transconductances are insensitive to the target concentration. The understanding of the mechanisms underlying the transistor transduction of the biorecognition events is key for the interpretation of the response of the rGO‐EGT immunosensors and to guide the design of novel and more sensitive devices.

Carrier mobility and optical properties of a type-II GaSe/ZnS heterostructure as a photocatalyst: a first-principles study.

In this paper, a new GaSe/ZnS van der Waals heterostructure (vdWH) was constructed and a systematic analysis of the electronic structure, interfacial properties, and transport and photocatalytic capacity of the GaSe/ZnS vdWH was performed by using first-principles calculations. It was found that the heterostructure exhibited excellent photocatalytic performance for water splitting. The direct band gap of the heterostructure calculated using the hybrid HSE06 functional was 2.19 eV, which had a good visible light absorption ability. The electronic structure of the type-II band arrangement effectively reduced the recombination of electron-hole pairs. The heterostructure also showed excellent transport ability, and the carrier mobility of electrons and holes along different directions was greatly improved. Additionally, as the electric field strength increased, the band gap width of the GaSe/ZnS vdWH narrowed and the heterostructure characteristics transitioned from semiconductor to metal properties, which were attributed to the appearance of near-free electronic (NFE) states induced by the strong electric field. Meanwhile, the optical absorption capacity of the heterostructure was greatly improved compared to the ZnS monolayer, reaching 1.44 × 105 cm-1 at an incident photon energy of 8.65 eV. Therefore, the GaSe/ZnS vdWH was proved to be an excellent photocatalytic material for water splitting in the present study.

Hole Mobility Enhancement in Benzo[1,2-b:4,5-b']Dithiophene-Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid-State Electrolyte Gating.

Tunability in electronic and optical properties has been intensively explored for developing conjugated polymers and their applications in organic and perovskite-based electronics. Particularly, the charge carrier mobility of conjugatedpolymer semiconductors has been deemed to be a vital figure-of-merit for achieving high-performance organic field-effect transistors (OFETs). In this study, the systematic hole carrier mobility improvement of benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer in perovskite-functionalized organic transistors is demonstrated. In conventional OFETs with a poly(methyl methacrylate) (PMMA)gate dielectric, improvements in hole mobility of 0.019cm2V-1s-1 are measured using an off-center spin-coating technique, which exceeds those of on-center counterparts (0.22 ± 0.07 × 10-2cm2V-1s-1). Furthermore, the mobility drastically increases by adopting solid-state electrolyte gating, corresponding to 2.99 ± 1.03cm2V-1s-1 for the control, and the best hole mobility is 8.03cm2V-1s-1 (average ≈ 6.94 ± 0.59cm2V-1s-1) for perovskite-functionalized OFETs with a high current on/off ratio of >106. The achieved device performance would be attributed to the enhanced film crystallinity and charge carrier density in the hybrid perovskite-functionalized organic transistor channel, resulting from the high-capacitance electrolyte dielectric.

The effects of MS2 (M = Mo or W) substrates on electronic properties under electric fields in germanene-based field-effect transistors

Germanene has attracted significant attention due to its novel electronic properties and strong spin-coupling effect. However, the tiny band gap of the germanene dramatically limits its application in field-effect transistors (FETs). Inspired by the utilization of the substrates and electric fields to adjust the band gaps of two-dimensional materials, we investigated the fundamental mechanism of electric fields on the atomic structures and electronic properties of germanene supported by MS2 (M = Mo or W) substrates through first-principles calculation. The results show that the substrates can induce a symmetry breaking in the germanene sublattice via van der Waals interaction, leading to a sizable band gap at the Dirac point. In addition, the band gaps of the germanene/MS2 heterostructures can be effectively modulated by applying an external electric field. Under suitable electric fields, the considerable band gap values of CMo germanene/MoS2 and TGeL-W germanene/WS2 configurations can open the maximum band gaps with 263 and 247 meV, which satisfy the requirements of FETs at room temperature. Meanwhile, the evolutions of charge transfers under electric fields were explored to illustrate how electric fields and substrates promote the electronic properties of germanene. More interestingly, a Schottky–Ohmic transition can occur when a specific electric field is imposed on the germanene/MS2 heterostructures. Note that the hole and electron carrier mobilities of germanene/MS2 heterostructures are still significantly preserved, showing some superior electronic performances than some heterostructures. The results provide a critical theoretical guide for improving the electronic properties of germanene, and demonstrate the designed germanene/MS2 heterostructures with the tunable band gaps and higher carrier mobilities as germanene-based FETs.

Pulse area compensation approach for ballistic deficits correction in perovskite CsPbBr3 semiconductor detector

Halide perovskite CsPbBr3 semiconductor has exhibited extraordinary performance on ionizing radiation detection at room temperature in the light of excellent photoelectric properties. However, signals from the CsPbBr3 planar detector usually comprises the long rising edge due to its low hole carrier mobility, subsequently leading to severe ballistic deficits in pulse amplitudes (over 10 %) when the shaping time is inferior to rise time. To overcome this issue, the integrated pulse area approach is proposed and implemented herein to compensate the amplitudes underestimation of pulses particularly with varied rise times. It was verified that the pulse area extracted by this approach was insensitive to the rise time (when varying from 1 to 130 μs) while manifesting the relative variance below 1.49 × 10−5. Accordingly, the bivariate distribution between the integrated pulse area and rise time regarded as unaffected by ballistic deficits was finally accomplished which reflected the actual depth of individual event interactions. The approach is computationally feasible in eliminating the ballistic deficit, and is anticipated to foster the deployment of perovskite detector in radiation detection.

Discotic Star Mesogen with Thymine Nucleobases Exhibiting a Rare Gyroid Cubic Mesophase with 3D Conductivity.

A unique gyroid cubic phase has been discovered for a discotic star mesogen with three covalently attached DNA bases. In this cubic phase, the conjugated core of the mesogens and the thymine pseudo guests self-assemble in mirror image continuous networks, representing a semiconducting material with three-dimensional transport pathways. The hole carrier mobilities are found to be in the typical range of poly(phenylenevinylene) scaffolds. This structure is stabilized by a weak hydrogen bonding between the thymine bases and can be switched to a columnar liquid crystal - thermally and by the addition of complementary adenine guests.

Two-dimensional MoSe2/PtSe2 van der Waals type-II heterostructure: Promising visible light photocatalyst for overall water splitting

The development of simple and efficient visible light photocatalytic catalysts for hydrogen production from water is an important development direction in the field of photocatalysis, and composite two-dimensional materials are found to be promising candidates. This paper constructs a novel two-dimensional MoSe2/PtSe2 type-II heterojunction and systematically studies its geometric structure, electronic structure, and optical properties by first-principles calculation. It is evident that the heterojunction has good thermodynamic, kinetic, and mechanical stability, as well as excellent hole carrier mobility, which is conducive to the separation of photogenerated electrons and holes. The optical properties show that MoSe2/PtSe2 heterojunction has the best optical absorption efficiency for visible light and has the ability to cross the water-cracking oxidation-reduction potential at pH = 4. More importantly, the MoSe2/PtSe2 heterojunction shows great hydrogen absorption reaction performance, indicating that it is a potential photocatalyst for overall water splitting of visible light, and has broad application prospects in the field of photocatalysis and optoelectronics.

Elastic, Optical, and Thermoelectric Properties of 2D Square Lattice and Hexagonal Zinc Chalcogenides under First‐Principles Calculations

Herein, elastic, optical, and thermoelectric properties of zinc chalcogenides with 2D square lattice and hexagonal phases [s‐ and h‐ZnX (X = GrVI)] are reported. The s‐ZnX and h‐ZnX structures are achieved to be dynamically stable, according to the phonon dispersion studies. All s‐ and h‐ZnX compounds are found to be semiconductor, with direct and indirect bandgaps ranging from 0.81 to 2.77 eV under PBE and 1.70 to 4.15 eV by HSE06 calculations. The effective mass, mobility, and relaxation time of electron and hole carriers in the band structures of s‐ and h‐ZnX are investigated to gain a better insight of these materials. In addition to the phonon dispersion analysis, their mechanical stability in terms of elastic properties is evaluated, and the resulting elastic parameters validate their mechanical stability. The optical properties of s‐ and h‐ZnX are inspected in the occurrence of field polarizations across parallel and perpendicular directions. At room temperature, s‐ZnTe compound has an optimum figure of merit (ZT) value, indicating it as the superlative thermoelectric material in the entire series. These compounds may also be explored in ultraviolet lasers, solar cells, electronic image displays, high‐density optical memory, photodetectors, and solid‐state laser devices.

Perovskite Light-Emitting Diodes with an External Quantum Efficiency Exceeding 30.

Perovskite light-emitting diodes (PeLEDs) are strong candidates for next-generation display and lighting technologies due to their high color purity and low-cost solution-processed fabrication. However, PeLEDs are not superior to commercial organic light-emitting diodes (OLEDs) in efficiency, as some key parameters affecting their efficiency, such as the charge carrier transport and light outcoupling efficiency, are usually overlooked and not well optimized. Here, ultrahigh-efficiency green PeLEDs are reported with quantum efficiencies surpassing a milestone of 30% by regulating the charge carrier transport and near-field light distribution to reduce electron leakage and achieve a high light outcoupling efficiency of 41.82%. Ni0.9 Mg0.1 Ox films are applied with a high refractive index and increased hole carrier mobility as the hole injection layer to balance the charge carrier injection and insert the polyethylene glycol layer between the hole transport layer and the perovskite emissive layer to block the electron leakage and reduce the photon loss. Therefore, with the modified structure, the state-of-the-art green PeLEDs achieve a world record external quantum efficiency of 30.84% (average= 29.05±0.77%) at a luminance of 6514cdm-2 . This study provides an interesting idea to construct super high-efficiency PeLEDs by balancing the electron-hole recombination and enhancing the light outcoupling.

Single-layer ZnGaInS4: Desirable bandgap and high carrier separation efficiency for optoelectronics

Two-dimensional optoelectronic materials with desirable bandgaps and high carrier separation efficiency are in urgent need. Herein, single-layer ZnGaInS4 is designed and thoroughly studied by first-principles calculations. Our calculations reveal the excellent stability of single-layer ZnGaInS4, and the small cleavage energy demonstrates the feasibility to exfoliate single-layer ZnGaInS4 from bulk counterparts. At the HSE06 level, single-layer ZnGaInS4 has a moderate bandgap of 2.05 eV, and its valence band maximum and conduction band minimum are spatially separated, thus impeding the electron-hole pair formation and enhancing the photoelectronic performance. In the visible region, single-layer ZnGaInS4 exhibits an optical absorption coefficient of ∼ 105 cm−1. Notably, single-layer ZnGaInS4 possesses high electron carrier mobility and low hole carrier mobility, further affirming the effective carrier separation. Another attractive characteristic is that single-layer ZnGaInS4 has anisotropic hole mobility. The desirable bandgap and high separation efficiency of generated carriers, together with abundant optical absorption, promise single-layer ZnGaInS4 is a hopeful candidate in atomic-thick optoelectronic devices.

Periphery Fusion Strategy of a Carbazole-Based Macrocycle toward Coplanar N-Heterocycloarene for High-Mobility Single-Crystal Transistors.

Designing (hetero)cycloarenes through the modifications of the π-topology and molecular packing of organic semiconductors has recently garnered considerable attention. However, their applications as an organic active layer in field-effect transistors are very limited, and the obtained hole carrier mobilities are less than 1 cm2 V-1 s-1 . In this work, a novel alkyl-substituted coplanar N-heterocycloarene (FM-C4) containing four carbazole units is successfully synthesized in crystalline form. As compared to the corresponding single-bond-linked carbazole-based macrocycle M-C4, it is found that the periphery fusion strategy greatly changes the electronic structures, energy levels, photophysical properties, host-guest interactions with fullerenes, and molecular crystal stacking motifs. In particular, the fully fused N-heterocycloarene FM-C4 exhibits a herringbone packing structure with an unusual long-range π-π overlap distance as low as 3.19 Å, whereas the single crystal of M-C4 demonstrates no π-π interactions. As a consequence, FM-C4 in single-crystal transistors displays the highest hole mobility of 2.06 cm2 V-1 s-1 , significantly outperforming M-C4 and all the reported (hetero)cycloarenes and suggesting the high potential of (hetero)cycloarenes for organic electronic applications.

S-Indacene Revisited: Modular Synthesis and Modulation of Structures and Molecular Orbitals of Hexaaryl Derivatives

Though s-indacene is an intriguing antiaromatic hydrocarbon of 12 π-electrons, it has been underrepresented due to the lack of efficient and versatile methods to prepare stable derivatives. Herein we report a concise and modular synthetic method for hexaaryl-s-indacene derivatives bearing electron-donating/-accepting groups at specific positions to furnish C2h-, D2h-, and C2v-symmetric substitution patterns. We also report the effects of substituents on their molecular structures, frontier molecular orbital (MO) levels, and magnetically induced ring current tropicities. Both theoretical calculations and X-ray structure analyses indicate that the derivatives of the C2h-substitution pattern adopt different C2h structures with significant bond length alternation depending on the electronic property of the substituents. Due to the nonuniform distribution of the frontier MOs, their energy levels are selectively modulated by the electron-donating substituents. This leads to the inversion of the HOMO and HOMO-1 sequences with respect to those of the intrinsic s-indacene as theoretically predicted and experimentally proven by the absorption spectra at visible and near-infrared regions. The NICS values and the 1H NMR chemical shifts of the s-indacene derivatives indicate their weak antiaromaticity. The different tropicities are explained by the modulation of the HOMO and HOMO-1 levels. In addition, for the hexaxylyl derivative, weak fluorescence from the S2 excited state was detected due to the large energy gap between the S1 and S2 states. Notably, an organic field-effect transistor (OFET) fabricated using the hexaxylyl derivative exhibited moderate hole carrier mobility, a result which opens the door for optoelectronic applications of s-indacene derivatives.

Interfacial Interaction Enables Enhanced Mobility in Hybrid Perovskite-Conjugated Polymer Transistors with High-k Fluorinated Polymer Dielectrics.

The charge carrier mobility of organic field-effect transistors (OFETs) has been remarkably improved through several engineering approaches and techniques by targeting pivotal parts. Herein, an ultrathin perovskite channel layer that boosts the field-effect mobility of conjugated polymer OFETs by forming perovskite-conjugated polymer hybrid semiconducting channel is introduced. The optimized lead-iodide-based perovskite-conjugated polymer hybrid channel transistors show enhanced hole mobility of over 4cm2 V-1 s-1 (average=2.10cm2 V-1 s-1 ) with high reproducibility using a benchmark poly(3-hexylthiophene) (P3HT) polymer and employing high-k fluorinated polymer dielectrics. A significant hole carrier mobility enhancement of ≈200-400% in benzo[1,2-b:4,5:b']dithiophene (BDT)-based conjugated polymers is also demonstrated by exploring certain interactive groups with perovskite. This significant enhancement in the transistor performance is attributed to the increased charge carrier density in the hybrid semiconducting channel and the perovskite-polymer interactions. The findings of this paper demonstrate an exceptional engineering approach for carrier mobility enhancement in hybrid perovskite-conjugated-polymer-based electronic devices.